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Two-dimensional subthreshold current model for dualmaterial gate SOI nMOSFETs with single halo

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Frontiers of Electrical and Electronic Engineering in China 2009年第1期4卷 98-103页

作者： suzhen LUAN Hongxia LIU Renxu jia Jin wang School of Microelectronics Xidian UniversityXi’an 710071China

A two-dimensional(2D)model for the subthreshold current in the dual-material gate(DMG)siliconon-insulator(SOI)MOSFET with a single halo is *** model considers single halo doping in the channel near the source and a dual-material gate to derive the channel potential using the explicit solution of the 2D Poisson’s *** with the conventional driftdiffusion theory,this results in the development of a subthreshold current model for the novel *** verification is carried out using the 2D device simulator *** agreement is obtained between the calculations and the simulated results of the model.

关键词： dual-material gate(DMG) silicon-on-insulator(SOI) electron mobility

Performance investigations of novel dual-material gate(DMG) MOSFET with dielectric pockets(DP)

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Science China(Technological Sciences) 2009年第8期52卷 2400-2405页

作者： LUAN suzhen LIU HongXia jia RenXu Key Laboratory of Ministry of Education of China for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi’an 710071China

Dual-material gate MOSFET with dielectric pockets (DMGDP MOSFET) is proposed to eliminate the potential weakness of the DP MOSFET for CMOS scaling toward the 32 nm gate length and beyond. The short-channel effects (SCE) can be effectively suppressed by the insulator near the source/drain regions. And the suppression capability can be even better than the DP MOSFET due to the drain bias absorbed by the screen gate. The speed performance and electronic characteristics of the DMGDP MOSFET are comprehensively studied. Compared to the experimental data from Jurczak et al., the DMGDP PMOSFET exhibits good subthreshold characteristics and the on-state current is almost the twice that of the DP PMOSFET. The intrinsic delay of the NMOS reaches 21% greater than the DP MOSFET for 32 nm node. The higher fT of 390 GHz is achieved, which is a 32% enhancement in comparison with the DP MOSFET when the gate length is 50 nm. Finally, the design guideline and the optimal regions of the DMGDP MOSFET are discussed.

关键词： dual material gate (DMG) dielectric pockets (DP) short-channel effect (SCE) cutoff frequency

Design and research of normally-offβ-Ga_(2)O_(3)/4H-SiC heterojunction field effect transistor

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Chinese Physics B 2023年第3期32卷 461-466页

作者：程梅霞栾苏珍王海林贾仁需 The Key Laboratory of Heterogeneous Network Convergence Communication Xi'an University of Science and TechnologyXi'an 710600China The Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China

Ga_(2)O_(3)is difficult to achieve p-type doping,which further hinders the development of Ga_(2)O_(3)-based power devices and is not conducive to the development of new devices with high power density and low power *** paper expounds aβ-Ga_(2)O_(3)/4H-SiC heterojunction lateral metal–oxide–semiconductor field-effect transistor(HJFET),which can make better use of the characteristics of PN junction by adding p-doped SiC in the channel *** with the conventional devices,the threshold voltage of the heterojunction metal–oxide–semiconductor field-effect transistor(MOSFET)is greatly improved,and normally-off operation is realized,showing a positive threshold voltage of 0.82 ***,the off-state breakdown voltage of the device is up to 1817 V,and the maximum transconductance is 15.3 mS/*** optimal PFOM is obtained by simulating the thickness,length and doping of the SiC in each region of the epitaxial *** structure provides a feasible idea for high performanceβ-Ga_(2)O_(3)MOSFET.

关键词： MOSFET heterojunction threshold voltage

Identification of the PmWEEP locus controlling weeping traits in Prunus mume through an integrated genome-wide association study and quantitative trait locus mapping

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Horticulture Research 2021年第1期8卷 1901-1914页

作者： Xiaokang Zhuo Tangchun Zheng suzhen Li Zhiyong Zhang Man Zhang Yichi Zhang Sagheer Ahmad Lidan Sun jia wang Tangren Cheng Qixiang Zhang Beijing Advanced Innovation Center for Tree Breeding by Molecular Design Beijing Forestry University100083 BeijingChina Beijing Key Laboratory of Ornamental Plants Germplasm Innovation&Molecular Breeding National Engineering Research Center for FloricultureBeijing Laboratory of Urban and Rural Ecological EnvironmentEngineering Research Center of Landscape Environment of Ministry of EducationKey Laboratory of Genetics and Breeding in Forest Trees and Ornamental Plants of Ministry of EducationSchool of Landscape ArchitectureBeijing Forestry University100083 BeijingChina

Weeping Prunus mume(mei)has long been cultivated in East Asia for its specific ornamental ***,little is known about the regulatory mechanism of the weeping trait in mei,which limits molecular breeding for the improvement of weeping-type ***,we quantified the weeping trait in mei using nested phenotyping of 214 accessions and 342 F 1 *** major associated loci were identified from the genome-wide association study(GWAS),which was conducted using 3,014,409 single nucleotide polymorphisms(SNPs)derived from resequencing,and 8 QTLs and 55 epistatic loci were identified from QTL mapping using 7,545 specific lengths amplified fragment(SLAF)***,an overlapping PmWEEP major QTL was fine mapped within a 0.29 Mb region on chromosome 7(Pa7),and a core SNP locus closely associated with the weeping trait was screened and ***,a total of 22 genes in the PmWEEP QTL region were expressed in weeping or upright mei based on RNA-seq *** them,only a novel gene(Pm024213)containing a thioredoxin(Trx)domain was found to be close to the core SNP and specifically expressed in buds and branches of weeping ***-expression analysis of Pm024213 showed that most of the related genes were involved in auxin and lignin *** findings provide insights into the regulatory mechanism of the weeping trait and effective molecular markers for molecular-assisted breeding in Prunus mume.

关键词： trait breeding mume

Crustal velocity structures and their tectonic implications in different tectonic block regions of the Chinese mainland

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Earthquake Science 2009年第4期22卷 337-346页

作者： Xiankang Zhang Yonghong Duan Jinren Zhao Chengke Zhang Shixu jia jianshi Zhang Fuyun wang Zhuoxin Yang suzhen Pan Geophysical Exploration Center China Earthquake Administration Zhengzhou 450002 China

In this paper, the typical velocity structures and average velocities of the crust in six different active tectonic block regions are presented on the basis of previous studies and their tectonic implications are discussed. The results show that different tectonic units have different features of crustal velocity structures. In general, there are low velocity distributions in the crust in regions with strong tectonic activities, and the scales of low velocity distributions are related to the tectonic activities. The average velocities are relatively low in such regions. This reflects strong crustal deformation and the variations of states of matter in the crust resulting from strong tectonic movements. These regions are also seismically active zones frequented by strong earthquakes. Therefore, studying crustal velocity structures of these regions is of great importance to understanding crustal geodynamic process and seismogenic tectonic background.

关键词： tectonic block wide angle reflection and refraction experiments velocity structure crust model

Transcriptome profiles reveal that gibberellin-related genes regulate weeping traits in crape myrtle

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Horticulture Research 2020年第1期7卷 2068-2081页

作者： suzhen Li Tangchun Zheng Xiaokang Zhuo Zhuojiao Li Lulu Li Ping Li Like Qiu Huitang Pan jia wang Tangren Cheng Qixiang Zhang Beijing Advanced Innovation Center for Tree Breeding by Molecular Design Beijing Forestry UniversityBeijing 100083China Beijing Key Laboratory of Ornamental Plants Germplasm Innovation and Molecular Breeding National Engineering Research Center for FloricultureBeijing Laboratory of Urban and Rural Ecological EnvironmentEngineering Research Center of Landscape Environment of the Ministry of EducationKey Laboratory of Genetics and Breeding in Forest Trees and Ornamental Plants of Ministry of EducationSchool of Landscape ArchitectureBeijing Forestry UniversityBeijing 100083China

Plant architecture includes vital traits that influence and benefit crops,and economically important *** plant architectures provide natural *** ornamental plants are aesthetically appealing to *** regulatory mechanism controlling the weeping trait is poorly understood in crape *** investigate the weeping trait mechanism,transcriptional profiling of different organs in weeping and upright crape myrtle was performed based on *** and histological analyses demonstrated that endodermal cells were absent,and that new shoot phenotypes could be rescued by the GA3 treatment of weeping *** transcriptional analysis and coexpression network analysis(WGCNA)of differentially expressed genes indicated that GA synthesis and signal transduction pathways play a role in weeping *** the expression level of a negative element of GA signaling,LfiGRAS1,was reduced by virus-induced gene silencing(VIGS),new branches grew in infected plants in a negatively geotropic *** integrated analysis implied that GA had a strong influence on weeping crape myrtle by interacting with other *** study helps to elucidate the mechanism governing the weeping trait and can improve the efficiency of breeding in Lagerstroemia.

关键词： traits breeding crops

Study on a novel vertical enhancement-mode Ga_(2)O_(3) MOSFET with FINFET structure

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Chinese Physics B 2022年第1期31卷 547-552页

作者： Liangliang Guo Yuming Zhang suzhen Luan Rundi Qiao Renxu jia The Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China Xi'an University of Science and Technology Xi'an 710000China

A novel enhanced mode(E-mode)Ga_(2)O_(3) metal-oxide-semiconductor field-effect transistor(MOSFET)with vertical FINFET structure is proposed and the characteristics of that device are numerically *** is found that the concentration of the source region and the width coupled with the height of the channel mainly effect the on-state *** metal material of the gate,the oxide material,the oxide thickness,and the epitaxial layer concentration strongly affect the threshold voltage and the output *** an E-mode MOSFET device requires a large work function gate metal and an oxide with large dielectric *** the output current density of the device increases,the source concentration,the thickness of the epitaxial layer,and the total width of the device need to be *** threshold voltage decreases with the increase of the width of the channel area under the same gate *** is indicated that a set of optimal parameters of a practical vertical enhancement-mode Ga_(2)O_(3) MOSFET requires the epitaxial layer concentration,the channel height of the device,the thickness of the source region,and the oxide thickness of the device should be less than 5×10^(16) cm^(-3),less than 1.5μm,between 0.1μm-0.3μm and less than 0.08μm,respectively.

关键词： gallium oxide E-mode device simulation threshold voltage

BULKED SEGREGANT RNA SEQUENCING(BSR-SEQ)IDENTIFIES A NOVEL ALLELE ASSOCIATED WITH WEEPING TRAITS IN PRUNUS MUME

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Frontiers of Agricultural Science and Engineering 2021年第2期8卷 196-214页

作者： Xiaokang ZHUO Tangchun ZHENG Zhiyong ZHANG suzhen LI Yichi ZHANG Lidan SUN Weiru YANG jia wang Tangren CHENG Qixiang ZHANG Beijing Key Laboratory of Ornamental Plants Germplasm Innovation and Molecular Breeding National Engineering Research Center for FloricultureBeijing Laboratory of Urban and Rural Ecological EnvironmentEngineering Research Center of Landscape Environment of Ministry of EducationKey Laboratory of Genetics and Breeding in Forest Trees and Ornamental Plants of Ministry of EducationSchool of Landscape ArchitectureBeijing Forestry UniversityBeijing 100083China Beijing Advanced Innovation Center for Tree Breeding by Molecular Design Beijing Forestry UniversityBeijing 100083China.

Weeping species are used both as ornamental plants and for breeding dwarf plant ***,exploration of casual genes controlling weeping traits is rather ***,we identified individuals with contrasting phenotypes from an Fx bi-parental mapping population of Prunus mume which was developed from a cross between the upright cultivar/Liuban,and the weeping cultivar'Fentai Chuizhi'.Bulked segregant RNA sequencing was used and five QTLs on chromosome 7 were *** Pm024074(PmilGT72B3)allele,belonging to the UDP-glycosyltransferase superfamily containing the coniferyl-alcohol glucosyltransferase domain,was identified in a genomic region overlapping with a previously identified QTL;and had a synonymous transition of T66(upright)to C(weeping)in the coding sequence and a 470-bp deletion in the promoter ***024074 had exceptionally high expression in buds and stems of weeping *** correlation network analysis indicates that genes neighboring Pm024074 were significantly associated with plant *** addition,a reliable single nucleotide polymorphism marker was developed based on the variation in the Pm024074 gene,providing precise marker-assisted breeding for weeping *** study provides insights into the genetic mechanism governing the weeping trait in ***,and indicates potential applications for the manipulation of tree architecture.

关键词： BSR-seq PmUGT72B3 Prunus mume UDP-glycosyltransferase weeping shoots WGCNA

Deep seismic sounding data reveal the crustal structures beneath Zoigê basin and its surrounding folded orogenic belts

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Science China Earth Sciences 2010年第2期53卷 203-212页

作者： jia ShiXu,ZHANG XianKang,ZHAO JinRen,wang FuYun,ZHANG ChengKe,XU ZhaoFan,PAN JiShun,LIU Zhi,PAN suzhen & SUN GuoWei Geophysical Exploration Center,China Earthquake Administration,Zhengzhou 450002,China Geophysical Exploration Center China Earthquake Administration Zhengzhou China

Songpan-Garze massif is located at the turning position of tectonics from the nearly west-east direction to the nearly north-south direction in the northeastern margin of Tibetan Plateau,with Zoigê basin in the centre of the *** this paper,we build a crustal structure model of Zoigê basin and its surrounding folded orogenic belts using the deep seismic sounding data in this *** also discuss structures and properties of the basement in Zoigê basin,tectonic relations between Zoigê upland basin and its surrounding folded orogenic belts,crustal deformation and thickening in the northeastern margin of Tibetan Plateau,and decoupling and relaxing processes in the *** results indicate that a special "Mesozoic basement" is formed of Triassic rocks with high density (2.65-2.75 g/cm3) and high velocity (5.6 km/s) in Zoigê ***-Garze tectonic massif was transformed into two types of tectonic units with different crustal structures,i.e.,relatively stable Zoigê upland basin and active folded orogenic belts around the basin,in the course of the crustal material of Tibetan Plateau flowing eastward and obstructed by surrounding stable *** thickening of the crust in the northeastern margin of Tibetan Plateau mainly occurred in the mid and lower crust,and the structure characterized by low velocities and multiple reflectors obviously appears in the folded orogenic belts around Zoigê *** implies that the mid and lower crust underwent a strong tectonic deformation in the folded orogenic *** thickness of the crust is about 50 km in Zoigê basin and the folded orogenic belts at the both southern and northern sides of Zoigê *** "Mountain root" cannot be *** is inferred that during the later orogenic period the eastwards flowing deep materials moved clockwise along the relatively relaxing southern side around the eastern tectonic knot under the obstructing of surrounding rigid massifs,and it resulted in the strong stretching action

关键词： Zoigê basin folded orogenic belt deep seismic sounding basement structure crustal structure and tectonics