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Cu^+-incorporated TiO_2 overlayer on Cu_2O nanowire photocathodes for enhanced photoelectrochemical conversion of CO_2 to methanol

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Journal of Energy Chemistry 2018年第1期27卷 264-270页

作者： Kangha Lee Seokwon Lee Hyunjin Cho sunil jeong Whi Dong Kim Sooho Lee Doh C.Lee Department of Chemical and Biomolecular Engineering(BK21+program) KAIST Institute for the NanocenturyKorea Advanced Institute of Science and Technology(KAIST)

In this paper, we report photoelectrochemical（PEC） conversion of carbon dioxide（CO_2） using photocathodes based on Cu_2O nanowires（NWs） overcoated with Cu~＋-incorporated crystalline TiO_2（TiO_2–Cu~＋）shell. Cu_2O NW photocathodes show remanent photocurrent of 5.3% after 30 min of PEC reduction of CO_*** coating Cu_2O with TiO_2–Cu~＋ overlayer, the remanent photocurrent is 27.6%, which is an increase by5.2 fold. The charge transfer resistance of Cu_2O/TiO_2–Cu~＋ is 0.423 k/cm2, whereas Cu_2O photocathode shows resistivity of 0.781 k/cm2 under irradiation. Mott–Schottky analysis reveals that Cu~＋ species embedded in TiO_2 layer is responsible for enhanced adsorption of CO_2 on TiO_2 surface, as evidenced by the decrease of capacitance in the Helmholtz layer. On account of these electrochemical and electronic effects by the Cu~＋ species, the Faradaic efficiency（FE） of photocathodes reaches as high as 56.5% when TiO_2–Cu~＋ is added to Cu_2O, showing drastic increase from 23.6% by bare Cu_2O photocathodes.

关键词： Photoelectrochemical CO2 reductionMethanol generation Copper oxide Titanium dioxide Cu+ catalyst

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Bulk-Si photonics technology for DRAM interface[Invited]

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Photonics Research 2014年第3期2卷 S0025-S0033页

作者： Hyunil Byun Jinkwon Bok Kwansik Cho Keunyeong Cho Hanmei Choi Jinyong Choi Sanghun Choi Sangdeuk Han Seokyong Hong Seokhun Hyun TJjeong Ho-Chul Ji In-Sung Joe Beomseok Kim Donghyun Kim Junghye Kim jeong-Kyoum Kim Kiho Kim Seong-Gu Kim Duanhua Kong Bongjin Kuh Hyuckjoon Kwon Beomsuk Lee Hocheol Lee Kwanghyun Lee Shinyoung Lee Kyoungwon Na jeongsik Nam Amir Nejadmalayeri Yongsang Park sunil Parmar Junghyung Pyo Dongjae Shin Joonghan Shin Yong-hwack Shin Sung-Dong Suh Honggoo Yoon Yoondong Park Junghwan Choi Kyoung-Ho Ha Gitae jeong Samsung Electronics 1 SamsungjeonjaroHwasungshiGyoung-gido445-330South Korea

We present photonics technology based on a bulk-Si substrate for cost-sensitive dynamic random-access memory(DRAM)optical interface *** summarize the progress on passive and active photonic devices using a local-crystallized Si waveguide fabricated by solid phase epitaxy or laser-induced epitaxial growth on bulk-Si *** process of integration of a photonic integrated circuit(IC)with an electronic IC is demonstrated using a 65 nm DRAM periphery process on 300 mm wafers to prove the possibility of seamless integration with various complementary metal-oxide-semiconductor *** the bulk-Si photonic devices,we show the feasibility of high-speed multidrop interface:the Mach–Zehnder interferometer modulators and commercial photodetectors are used to demonstrate four-drop link operation at 10 Gb∕s,and the transceiver chips with photonic die and electronic die work for the DDR3 DRAM interface at 1.6 Gb∕s under a 1∶4 multidrop configuration.

关键词： interferometer waveguide interface

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