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Is quantum capacitance in graphene a potential hurdle for device scaling？

Nano Research 2014年第4期7卷 453-461页

作者： Jaeho Lee Hyun-Jong Chung David H. seo Jaehong Lee Hyungcheol Shin sunae seo seongjun Park Sungwoo Hwang Kinam Kim Samsung Advanced Institute of Technology Samsung Electronics Yongin-Si Gyeonggi-Do 446-712 Korea Inter-University Semiconductor Research Center (ISRC) School of Electrical Engineering and Computer Science Seoul National University Seoul 151-742 Korea Division of Quantum Phases and Devices Department of Physics Konkuk University Seou1143-701 Korea Semiconductor R&D Center Somsung Electronics Hwasung-City Gyeonggi-Do 446-711 Korea Department of Physics Sejong University Seou1143-74 7 Korea Memory Division Samsung Electronics Hwasung-City Gyeonggi-Do 446-711 Korea

Transistor size is constantly being reduced to improve performance as well as power consumption. For the channel length to be reduced, the corresponding gate dielectric thickness should also be reduced. Unfortunately, graphene devices are more complicated due to an extra capacitance called quantum capacitance （CQ） which limits the effective gate dielectric reduction. In this work, we analyzed the effect of CQ on device-scaling issues by extracting it from scaling of the channel length of devices. In contrast to previous reports for metal-insulator- metal structures, a practical device structure was used in conjunction with direct radio-frequency field-effect transistor measurements to describe the graphene channels. In order to precisely extract device parameters, we reassessed the equivalent circuit, and concluded that the on-state model should in fact be used. By careful consideration of the underlap region, our device modeling was shown to be in good agreement with the experimental data. CQ contributions to equivalent oxide thickness were analyzed in detail for varying impurity concentrations in graphene. Finally, we were able to demonstrate that despite contributions from CQ, graphene＇s high mobility and low-voltage operation allows for ~raphene channels suitable for next generation transistors.

关键词： graphene equivalent circuit quantum capacitance intrinsic delay

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