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Electronic properties of wurtzite GaAs： A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire

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Nano Research 2018年第9期11卷 4708-4721页

作者： Alexander Senichev Pierre Corfdir Oliver Brandt Manfred Ramsteiner steffen breuer Jorg Schilling Lutz Geelhaar Peter Werner Max-Planck-lnstitut fur Mikrostrukturl)hysik Halle 06120 Germany PauI-Drude-lnstitut for Festkorperelektronik Berlin 10117 Germany Centre for Innovation Competence SiLi-nano Martin-Luther-Universitat Halle 06120 Germany Present address: Birck Nanotechnology Center Purdue University West Lafayette Indiana 47907 USA Present address: Fraunhofer HHI Berlin 10587 Germany Present address: ABB Corporate Research Baden-Dattwi15405 Switzerland

III-V compound semiconductor nanowires are generally characterized by the coexistence of zincblende and wurtzite structures. So far, this polytypism has impeded the determination of the electronic properties of the metastable wurtzite phase of GaAs, which thus remain highly controversial. In an effort to obtain new insights into this topic, we cross-correlate nanoscale spectral imaging by near-field scanning optical microscopy with a transmission electron microscopy analysis of the very same polytypic GaAs nanowire dispersed onto a Si wafer. Thus, spatially resolved photoluminescence spectra could be unambiguously assigned to nanowire segments whose structure is known with lattice-resolved accuracy. An emission energy of 1.528 eV was observed from extended zincblende segments, revealing that the dispersed nanowire was under uniaxial strain presumably due to interaction with its supporting substrate. These crucial information and the emission energy obtained for extended pure wurtzite segments were used to perform envelope function calculations of zincblende quantum disks in a wurtzite matrix as well as the inverse structure. In these calculations, we varied the fundamental bandgap, the electron mass, and the band offset between zincblende and wurtzite GaAs. From this multi-parameter comparison with the experimental data, we deduced that the bandgap between the F8 conduction and A valence band ranges from 1.532 to 1.539 eV in strain-free wurtzite GaAs, and estimated values of 1.507 to 1.514 eV for the F7-A bandgap.

关键词： nanowires crystal-phase quantumstructures wurtzite GaAs strain near-field scanning optical microscopy photoluminescence

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