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Tool path generation for 5-axis flank milling of ruled surfaces with optimal cutter locations considering multiple geometric constraints

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Chinese Journal of Aeronautics 2023年第12期36卷 408-424页

作者： shuoxue sun Yuwen sun Jinting XU School of Mechanical Engineering Dalian University of TechnologyDalian 116024China School of Automotive Engineering Dalian University of TechnologyDalian 116024China

Ruled surfaces found in engineering parts are often blended with a constraint surface,like the blade surface and hub surface of a centrifugal *** is significant to accurately machine these ruled surfaces in flank milling with interference-free and fairing tool path,while current models in fulfilling these goals are complex and *** this paper,a tool path planning method with optimal cutter locations(CLs)is proposed for 5-axis flank milling of ruled surfaces under multiple geometric *** be specific,a concise three-point contact tool positioning model is firstly developed for a cylindrical *** tool orientations arise when varying the three contact positions and a tool orientation pool with acceptable cutter-surface deviation is constructed using a meta-heuristic *** angular curves are derived from candidates in this pool,and then curve registration for cutter tip point on each determined tool axis is performed in respect of interference avoidance and geometric *** this basis,an adaptive interval determination model is developed for deviation control of interpolated cutter *** model is designed to be independent of the CL optimization process so that multiple CLs can be planned simultaneously with parallel computing ***,tests are performed on representative surfaces and the results show the method has advantages over previous meta-heuristic tool path planning approaches in both machining accuracy and computation time,and receives the best comprehensive performance compared to other multi-constrained methods when machining an impeller.

关键词： Flank milling Tool path Tool orientation pool Machining Ruled surface

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Intermediate phase assisted sequential deposition of reverse-graded quasi-2D alternating cation perovskites for MA-free perovskite solar cells

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InfoMat 2023年第3期5卷 134-149页

作者： Shaofu Wang Yumin Liu Junjie Zou Junjun Jin Yun Jiang Tao Zeng Wenyan Zhao Rong-Xiang He Bolei Chen Yu Chen shuoxue Jin Hong-Xiang Li Zhipeng Xie Chang-An Wang Weiwei sun Qiang Cao Xing-Zhong Zhao School of Materials Science and Engineering National Engineering Research Center for Domestic&Building CeramicsJingdezhen Ceramic UniversityJingdezhenthe People Republic of China School of Physics and Technology Institute of Technological SciencesKey Laboratory of Artificial Micro/Nano StructuresMinistry of EducationWuhan UniversityWuhanthe People Republic of China Institute for Interdisciplinary Research(IIR) Key Laboratory of Optoelectronic Chemical Materials and DevicesMinistry of EducationJianghan UniversityWuhanthe People Republic of China Beijing Synchrotron Radiation Facility Institute of High Energy PhysicsChinese Academy of SciencesBeijingthe People Republic of China College of Polymer Science and Engineering State Key Laboratory of Polymer Materials EngineeringSichuan UniversityChengduthe People Republic of China College of Aerospace Science and Engineering National University of Defense TechnologyChangshathe People Republic of China

One-step deposition approaches have been widely applied and developed in the fabrication of quasi-2D ***,the regulation of quantum wells(QWs)and crystalline orientation is difficult and complicated when using this *** deposition is another widespread synthetic approach for preparing perovskite films and perovskite dimension *** this article,δ-CsPbI_(3)intermediate phase assisted sequential(IPAS)deposition is successfully carried out to fabricate MA-free quasi-2D ACI *** amount of theδ-CsPbI_(3)intermediate phase in the PbI2 layer and the concentration of GAI molecule in the IPA solution both play important roles in the production of MA-free quasi-2D ACI perovskite *** n value of the MA-free quasi-2D ACI perovskites can be adjusted,which affects the photovoltaic performance and device *** with one-step deposition,the MA-free quasi-2D ACI perovskites prepared via IPAS deposition have opposite reverse-graded QW distribution and improved vertical orientation,leading to a remarkable PEC of up to 18.86%and allowing the preparation of unpackaged devices with prominent working stability(80%,400 h).The underlying mechanism and crystallization pathway of IPAS deposition confirm that sequential deposition has unique superiority in regulating the QW distribution and crystalline orientation of quasi-2D perovskites.

关键词： intermediate phase quantum well distribution quasi-2D perovskite sequential deposition solar cells

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RAFM钢中H^+辐照空位型缺陷的慢正电子束研究

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核技术 2019年第7期42卷 8-14页

作者：张梓晗宋力刚靳硕学曹兴忠孙建荣洪志远李小燕李锦钰燕青芝王宝义东华理工大学核科学与工程学院南昌330013 中国科学院高能物理研究所多学科研究中心北京100049 中国科学院近代物理研究所兰州730000 北京科技大学北京100083

为研究低活化铁素体/马氏体(Reduced Activation Ferritic/Martensitic,RAFM)钢的辐照损伤机理,利用慢正电子技术研究了H^+辐照RAFM钢时所产生的空位型缺陷及其对于材料微观结构的影响。H^+能量和剂量分别为100keV和1×10^15cm^-2、1×1... 详细信息

为研究低活化铁素体/马氏体(Reduced Activation Ferritic/Martensitic,RAFM)钢的辐照损伤机理,利用慢正电子技术研究了H^+辐照RAFM钢时所产生的空位型缺陷及其对于材料微观结构的影响。H^+能量和剂量分别为100keV和1×10^15cm^-2、1×10^16cm^-2、1×10^17cm^-2。慢正电子束多普勒展宽测量结果可得,S参数随着剂量的增大而增大,W参数呈现正相反的趋势。样品中主要辐照区域为142~348nm,此范围内有大量缺陷产生,辐照产生的主要为空位型缺陷,其中多为氢-空位复合体缺陷,辐照缺陷的浓度随着H+剂量的增大而增加。空位型缺陷的尺寸大小也随着辐照剂量的增大而有所变化,辐照剂量达到10^17cm^-2时,S-W曲线斜率发生变化,故辐照缺陷类型发生明显变化,有较大尺寸的缺陷产生。

关键词： RAFM钢 H^+辐照慢正电子束技术空位型缺陷

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