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Repressing iron overload ameliorates central poststroke pain via the Hdac2-Kv1.2 axis in a rat model of hemorrhagic stroke

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Neural Regeneration Research 2024年第12期19卷 2708-2722页

作者： He Fang Mengjie Li Jingchen Yang shunping Ma Li zhang Hongqi Yang Qiongyan Tang Jing Cao Weimin Yang Department of Neurology The First Affiliated Hospital of Zhengzhou UniversityZhengzhouHenan ProvinceChina Department of Molecular Neuropathology Beijing Neurosurgical InstituteCapital Medical UniversityBeijingChina Department of Nutrition The First Affiliated Hospital of Zhengzhou UniversityZhengzhouHenan ProvinceChina Department of Neurology Henan Provincial People’s HospitalZhengzhouHenan ProvinceChina Department of Human Anatomy School of Basic Medical SciencesZhengzhou UniversityZhengzhouHenan ProvinceChina Neuroscience Research Institute Zhengzhou University Academy of Medical SciencesZhengzhouHenan ProvinceChina

Thalamic hemorrhage can lead to the development of central post-stroke pain.Changes in histone acetylation levels,which are regulated by histone deacetylases,affect the excitability of neurons surrounding the hemorrhagic area.However,the regulato ry mechanism of histone deacetylases in central post-stroke pain remains unclea r.Here,we show that iron overload leads to an increase in histone deacetylase 2expression in damaged ventral posterolateral nucleus neurons.Inhibiting this increase restored histone H3 acetylation in the Kcna2 promoter region of the voltage-dependent potassium(Kv)channel subunit gene in a rat model of central post-stroke pain,thereby increasing Kcna2expression and relieving central pain.However,in the absence of nerve injury,increasing histone deacetylase 2 expression decreased Kcna2expression,decreased Kv current,increased the excitability of neurons in the ventral posterolateral nucleus area,and led to neuropathic pain symptoms.Moreover,treatment with the iron chelator deferiprone effectively reduced iron overload in the ventral posterolateral nucleus after intracerebral hemorrhage,reversed histone deacetylase 2 upregulation and Kv1.2 downregulation,and alleviated mechanical hypersensitivity in central post-stroke pain rats.These results suggest that histone deacetylase 2 upregulation and Kv1.2 downregulation,mediated by iron overload,are important factors in central post-stroke pain pathogenesis and co uld se rve as new to rgets for central poststroke pain treatment.

关键词： central post-stroke pain hemorrhagic stroke histone deacetylase iron overload voltage-gated potassium ion channel 1.2

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Identification of twist-angle-dependent excitons in WS2/WSe2 heterobilayers

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National Science Review 2022年第6期9卷 56-63页

作者： Ke Wu Hongxia Zhong Quanbing Guo Jibo Tang Jing zhang Lihua Qian Zhifeng Shi Chendong zhang Shengjun Yuan shunping zhang Hongxing Xu School of Physics and Technology and Key Laboratory of Artificial Micro-and Nano-Structures of Ministry of Education Wuhan University School of Physics Huazhong University of Science and Technology The Institute for Advanced Studies Wuhan University Key Laboratory of Materials Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou University

Stacking atomically thin films enables artificial construction of van der Waals heterostructures with exotic functionalities such as superconductivity, the quantum Hall effect, and engineered light-matter interactions.In particular, heterobilayers composed of monolayer transition metal dichalcogenides have attracted significant interest due to their controllable interlayer coupling and trapped valley excitons in moiré superlattices. However, the identification of twist-angle-modulated optical transitions in heterobilayers is sometimes controversial since both momentum-direct(K–K) and-indirect excitons reside on the low energy side of the bright exciton in the monolayer constituents. Here, we attribute the optical transition at ～1.35 eV in the WS2/WSe2heterobilayer to an indirect Γ–K transition based on a systematic analysis and comparison of experimental photoluminescence spectra with theoretical calculations. The exciton wavefunction obtained by the state-of-the-art GW-Bethe-Salpeter equation approach indicates that both the electron and hole of the excitons are contributed by the WS2layer. Polarization-resolved k-space imaging further confirms that the transition dipole moment of this optical transition is dominantly in-plane and is independent of the twist angle. The calculated absorption spectrum predicts that the so-called interlayer exciton peak coming from the K–K transition is located at 1.06 eV, but with a much weaker amplitude. Our work provides new insight into the steady-state and dynamic properties of twist-angle-dependent excitons in van der Waals heterostructures.

关键词： heterobilayers twist angle exciton indirect transition transition dipole moment

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Understanding the lineshape of surface-enhanced infrared absorption spectra

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National Science Review 2021年第4期8卷 39-40页

作者： shunping zhang Hongxing Xu School of Physics and Technology Center for Nanoscience and Nanotechnology and Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education Wuhan University The Institute for Advanced Studies Wuhan University

Infrared absorption spectroscopy offers fingerprint identification of molecular analytes through their vibrational or rotational degrees of freedom. However,the absorption cross-section of a single molecule is very small because the size of the molecule is far smaller than the wavelength of light, typically ranging from2.5 to 25μm. Therefore,

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Band alignment and interlayer hybridization in monolayer organic/WSe_(2) heterojunction

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Nano Research 2022年第2期15卷 1276-1281页

作者： Yanping Guo Linlu Wu Jinghao Deng Linwei Zhou Wei Jiang Shuangzan Lu Da Huo Jiamin Ji Yusong Bai Xiaoyu Lin shunping zhang Hongxing Xu Wei Ji Chendong zhang Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education and School of Physics and Technology Wuhan UniversityWuhan 430027China Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices Renmin University oj ChinaBeijing 100872China

Semiconducting heterojunctions(HJs),comprised of atomically thin transition metal dichalcogenides(TMDs),have shown great potentials in electronic and optoelectronic applications.Organic/TMD hybrid bilayers hold enhanced pumping efficiency of interfacial excitons,tunable electronic structures and optical properties,and other superior advantages to these inorganic HJs.Here,we report a direct probe of the interfacial electronic structures of a crystalline monolayer(ML)perylene-3,4,9,10-tetracarboxylic-dianhydride(PTCDA)/ML-WSe_(2) HJ using scanning tunneling microscopy,photoluminescence,and first-principle calculations.Strong PTCDAAA/Se_(2) interfacial interactions lead to appreciable hybridization of the WSe_(2) conduction band with PTCDA unoccupied states,accompanying with a significant amount of PTCDA-to-WSe_(2) charge transfer(by 0.06 e/PTCDA).A type-ll band alignment was directly determined with a valence band offset of-1.69 eV,and an apparent conduction band offset of-1.57 eV.Moreover,we found that the local stacking geometry at the HJ interface differentiates the hybridized interfacial states.

关键词： two-dimensional materials organic/transition metal dichalcogenide(TMD)heterojunction interlayer hybridization band diagram

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Merging bound states in the continuum by harnessing higher-order topological charges

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Light(Science & Applications) 2022年第9期11卷 2098-2106页

作者： Meng Kang Li Mao shunping zhang Meng Xiao Hongxing Xu Che Ting Chan School of Physics and Technology and Key Laboratory of Artificial Micro-and Nano-structures of Ministry of EducationWuhan UniversityWuhan 430072China Department of Physics The Hong Kong University of Science and TechnologyHong KongChina Wuhan Institute of Quantum Technology Wuhan 430206China School of Microelectronics Wuhan UniversityWuhan 430072China

Bound states in the continuum(BICs)can confine light with a theoretically infinite Q factor.However,in practical on-chip resonators,scattering loss caused by inevitable fabrication imperfection leads to finite Q factors due to the coupling of BICs with nearby radiative states.Merging multiple BICs can improve the robustness of BICs against fabrication imperfection by improving the Q factors of nearby states over a broad wavevector range.To date,the studies of merging BICs have been limited to fundamental BICs with topological charges±1.Here we show the unique advantages of higher-order BICs(those with higher-order topological charges)in constructing merging BICs.Merging multiple BICs with a higher-order BIC can further improve the Q factors compared with those involving only fundamental BICs.In addition,higher-order BICs offer great flexibility in realizing steerable off-T merging BICs.A higher-order BIC at F can split into a few off-T fundamental BICs by reducing the system symmetry.The split BICs can then be tuned to merge with another BIC,e.g.,an accidental BIC,at an off-Γpoint.When the in-plane mirror symmetry is further broken,merging BICs become steerable in the reciprocal space.Merging BICs provide a paradigm to achieve robust ultrahigh-Q resonances,which are important in enhancing nonlinear and quantum effects and improving the performance of optoelectronic devices.

关键词： topological charges states

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稀土掺杂对铌酸钠基陶瓷介电及储能性能的影响

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硅酸盐学报 2024年第4期52卷 1240-1249页

作者：王传民张海波郭新肖建中张晓东张顺平谢兵谭划华中科技大学材料科学与工程学院材料成形与模具技术国家重点实验室武汉430074 南昌航空大学材料科学与工程学院南昌330063 广东华中科技大学工业技术研究院广东东莞523808

随着对电子器件高度集成化、小型化的需求,电介质陶瓷逐渐成为脉冲电力电子系统中关键材料之一。其中,具有大的最大极化、小的剩余极化以及低的介电损耗的反铁电储能陶瓷逐渐成为最佳的储能陶瓷材料。采用固相反应法制备了Sm^(3+)掺杂的... 详细信息

随着对电子器件高度集成化、小型化的需求,电介质陶瓷逐渐成为脉冲电力电子系统中关键材料之一。其中,具有大的最大极化、小的剩余极化以及低的介电损耗的反铁电储能陶瓷逐渐成为最佳的储能陶瓷材料。采用固相反应法制备了Sm^(3+)掺杂的0.9NaNbO_(3)-0.1BiFeO_(3)(NN-BF)基弛豫反铁电陶瓷,化学式为(1–x)[0.9NaNbO_(3)-0.1BiFeO_(3)]-xSm_(2)O_(3)(x=0.01,0.02,0.03,0.04),系统地探究了Sm^(3+)掺杂对NN-BF基储能陶瓷物相结构、微观形貌、介电性能及储能性能的影响。结果表明:随着Sm^(3+)掺杂量的增加,储能陶瓷的晶粒尺寸和剩余极化均呈现先减小后增大的趋势,而击穿场强、最大极化、储能密度及储能效率均呈现先增大后减小的趋势。此外,由于Sm元素价态不稳定,适量掺杂Sm^(3+)可以稳定Fe^(3+)的价态,使NN-BF的反铁电相更加稳定。当Sm^(3+)的掺杂量为x=0.02时,NN-BF陶瓷反铁电相的稳定性以及铁电相的弛豫性均得到了增强,此时击穿场强达到438 KV/cm,室温下储能密度及储能效率分别为3.67 J/cm^(3)及71.63%,呈现较好的储能性能。

关键词：稀土掺杂反铁电陶瓷击穿场强储能密度

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Probing the limits of plasmonic enhancement using a two-dimensional atomic crystal probe

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Light(Science & Applications) 2018年第1期7卷 500-510页

作者： Wen Chen shunping zhang Meng Kang Weikang Liu Zhenwei Ou Yang Li Yexin zhang Zhiqiang Guan Hongxing Xu School of Physics and Technology Center for Nanoscience and Nanotechnologyand Key Laboratory of Artificial Micro-and Nano-structures of Ministry of EducationWuhan UniversityWuhan 430072China The Institute for Advanced Studies Wuhan UniversityWuhan 430072China

Achieving larger electromagnetic enhancement using a nanogap between neighboring metallic nanostructures has been long pursued for boosting light–matter interactions.However,the quantitative probing of this enhancement is hindered by the lack of a reliable experimental method for measuring the local fields within a subnanometer gap.Here,we use layered MoS2 as a two-dimensional atomic crystal probe in nanoparticle-on-mirror nanoantennas to measure the plasmonic enhancement in the gap by quantitative surface-enhanced Raman scattering.Our designs ensure that the probe filled in the gap has a well-defined lattice orientation and thickness,enabling independent extraction of the anisotropic field enhancements.We find that the field enhancement can be safely described by pure classical electromagnetic theory when the gap distance is no<1.24 nm.For a 0.62 nm gap,the probable emergence of quantum mechanical effects renders an average electric field enhancement of 114-fold,38.4%lower than classical predictions.

关键词： dimensional crystal render

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Plasmon-directed polymerization:Regulating polymer growth with light

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Nano Research 2018年第12期11卷 6384-6390页

作者： Yunxia Wang Shuangshuang Wang shunping zhang Oren A.Scherman Jeremy J.Baumberg Tao Ding Hongxing Xu Key Laboratory of Artificial Micro-and Nano-structures Of Ministry of Education of China School of Physics and Technologywuhan UniversityWuhan 430072China Nanophotonics Centre Cavendish LaboratoryUniversity of CambridgeCambridgeCB30HEUK Department of Chemistry University of CambridgeLensfield RoadCambridgeCB2I EWUK

Plasmon-induced polymerization can facilitate the site-selectivity and orientation of polymer growth, which enriches the toolbox of polymerization and nanofabrication. Here, we demonstrate plasmon-induced polymerization, accomplished by low-power laser excitation of gold nanoparticles (NPs). We selectively control the growth of polymers around single plasmonic NPs while monitoring the polymerization using dark field spectroscopy and subsequent scanning electron microscopy. This plasmon-induced polymerization, generated by hot electron initiation, not only precisely controls the thickness and composition of the polymer coatings but also regulates the location and orientation of the growth, which are strongly influenced by the laser polarization and near-field distribution around the plasmonic NPs. A saturation increase in the polymer thickness provides a strong support for our mechanism. This facile approach of nanoscale polymerization directed by light not only provides new opportunities in nanosynthesis and nanofabrication for functional devices, but also opens many routes for polymer physics and chemistry at the nanoscale level.

关键词： hot electrons plasmons polarization selective growth

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Controllable defects implantation in MoS2 grown by chemical vapor deposition for photoluminescence enhancement

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Nano Research 2018年第8期11卷 4123-4132页

作者： Ke Wu Zhe Li Jibo Tang Xianglong Lv Hailing Wang Ruichun Luo Pan Liu Lihua Qian shunping zhang Songliu Yuan School of Physics Huazhong University of Science and Technology Wuhan 430074 China School of Physics and Technology Center for Nanoscience and Nanotechnology and Key Laboratory of Artificial Micro- nndIVano-Structures of Ministry of Education Wuhan University Wuhan 430072 China The Institute for Advanced Studies Wuhan University Wuhan 430072 China Flexible Electronics Research Center Huazhong University of Science and Technology Wuhan 430074 China Department of Materials Science and Engineering Shanghai Jiaotong University Shanghai200240 China

Photoluminescence （PL） of transition metal dichalcogenides （TMDs） can be engineered by controlling the density of defects, which provide active sites for electron-hole recombination, either radiatively or non-radiatively. However, the implantation of defects by external stimulation, such as uniaxial tension and irradiation, tends to introduce local damages or structural non-homogeneity, which greatly degrades their luminescence properties and impede their applicability in constructing optoelectronic devices. In this paper, we present a strategy to introduce a controllable level of defects into the MoS2 monolayers by adding a hydrogen flow during the chemical vapor deposition, without sacrificing their luminescence characteristics. The density of the defect is controlled directly by the concentration of hydrogen. For an appropriate hydrogen flux, the monolayer MoS2 sheets have three times stronger PL emission at the excitonic transitions, compared with those samples with nearly perfect crystalline structure. The defect-bounded exciton transitions at lower energies arising in the defective samples and are maximized when the total PL is the strongest. However, the B exciton, exhibits a monotonic decline as the defect density increases. The Raman spectra of the defective MoS2 reveal a redshift （blueshift） of the in-plane （out-of-plane） vibration modes as the hydrogen flux increases. All the evidence indicates that the generated defects are in the form of sulfur vacancies. This study renders the high-throughput synthesis of defective MoS2 possible for catalysis or light emitting applications.

关键词： chemical vapor deposition（CVD） MoS2 hydrogen,sulfur vacancy defect-bounded exciton photoluminescenceenhancement,Raman shifts

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近八十年来华南高校内迁史料整理与研究

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韶关学院学报 2024年第2期45卷 53-60页

作者：张玉龙童顺平韶关学院韶文化研究院广东韶关512005 韶关学院教育科学学院广东韶关512005

华南高校内迁是抗战时期中国高校内迁的重要组成部分。华南高校内迁史料的收集整理,自抗战时期即已开始,20世纪80年代以后迅速发展。目前,相关史料的整理虽取得一定成绩,但同时也存在诸多的不足与遗憾。整理和编撰完整而系统的综合性华... 详细信息

华南高校内迁是抗战时期中国高校内迁的重要组成部分。华南高校内迁史料的收集整理,自抗战时期即已开始,20世纪80年代以后迅速发展。目前,相关史料的整理虽取得一定成绩,但同时也存在诸多的不足与遗憾。整理和编撰完整而系统的综合性华南高校内迁史料既有助于推进抗战时期华南高校内迁史的研究,亦有助于推进整个抗战时期内迁高校史研究的深化,非常必要且完全可能。

关键词：抗日战争华南高校内迁史料整理史料研究

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