检索结果-南通市图书馆

交联甜菜果胶对豌豆淀粉糊化及流变特性的影响

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

中国粮油学报 2024年第1期39卷 102-108页

作者：徐磊闫璟圆陈舒拉白兆良王子成王畅王晓乐淮阴工学院生命科学与食品工程学院淮安223003

将不同比例的交联甜菜果胶(CSBP)添加到豌豆淀粉(PS)中,制备CSBP-PS复配体系,并对复配体系的糊化及流变性能进行研究。结果表明:随着CSBP添加量的提高,复配体系的峰值黏度、崩解值、终值黏度和回生值均逐渐升高(P<0.05),而糊化温度逐渐... 详细信息

将不同比例的交联甜菜果胶(CSBP)添加到豌豆淀粉(PS)中,制备CSBP-PS复配体系,并对复配体系的糊化及流变性能进行研究。结果表明:随着CSBP添加量的提高,复配体系的峰值黏度、崩解值、终值黏度和回生值均逐渐升高(P<0.05),而糊化温度逐渐降低(P<0.05)。CSBP的存在使CSBP-PS复配体系的透光率降低,而膨胀势升高,同时更不容易发生凝沉现象(P<0.05)。流变实验表明,所有CSBP-PS复配体系都是典型的假塑性流体,随着CSBP添加量的增加,复配体系的屈服应力和稠度系数均增大,黏弹性增强。粒径分析结果表明,添加CSBP后复配体系颗粒粒径显著增大(P<0.05)。此外,扫描电子显微镜观察发现,CSBP-PS复配体系呈蜂窝状结构,随着CSBP添加量的增加,复配体系的网络结构变得更加规则,孔洞增大,孔壁增厚。

关键词：交联甜菜果胶豌豆淀粉糊化流变

维普期刊数据库

Two-dimensional optoelectronic devices for silicon photonic integration

在线全文

学校读者我要写书评

暂无评论

Journal of Materiomics 2023年第3期9卷 551-567页

作者： Zilan Tang shula Chen Dong Li Xiaoxia Wang Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsHunan Institute of Optoelectronic IntegrationCollege of Materials Science and EngineeringHunan UniversityChangshaHunan410082China

With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore's *** material systems and new device architectures are considered promising strategies for this ***-dimensional(2.)materials are layered materials and garnered persistent attention in recent years owing to their advantages in ultrathin body,strong light-matter interaction,flexible integration,and ultrabroad operation wavelength *** this end,the integra-tion of 2. materials into silicon-based platforms opens a new path for silicon photonic *** this work,a comprehensive review is given of the recent signs of progress related to 2. material inte-grated optoelectronic devices and their potential applications in silicon ***,the basic op-tical properties of 2. materials and heterostructures are summarized in the first ***,the state-of-the-art three typical 2. optoelectronic devices for silicon photonic applications are reviewed in ***,the perspective and challenges for the aim of 3D monolithic heterogeneous integration of these 2. optoelectronic devices are discussed.

关键词： Two-dimensional materials Silicon photonics Heterogeneous integration Optoelectronic devices

一种实现单层MoS_(2.光致发光显著增强的有效缺陷工程策略

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Science China Materials 2024年第7期67卷 2232-2238页

作者：陈荧黄卓睿刘华伟喻国粮张金鼎徐哲元陈明星李东马超黄明朱小莉陈舒拉蒋英潘安练 Key Laboratory for Micro-Nano Physics and Technology of Hunan Province Hunan Institute of Optoelectronic IntegrationSchool of Physics and ElectronicsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China School of Physics and Electronics Hunan Normal UniversityChangsha 410081China State Key Laboratory of Powder Metallurgy Central South UniversityChangsha 410083China

二维过渡金属硫族化合物(TMDCs)材料被认为是拓展摩尔定律的极具前景的候选材料.然而,该材料的低光致发光效率严重限制了其实际应用,其本质源于材料制备中不可避免引入的缺陷.在本文中,我们报道了一种Sr掺杂单层MoS_(2.的有效缺陷工程策... 详细信息

二维过渡金属硫族化合物(TMDCs)材料被认为是拓展摩尔定律的极具前景的候选材料.然而,该材料的低光致发光效率严重限制了其实际应用,其本质源于材料制备中不可避免引入的缺陷.在本文中,我们报道了一种Sr掺杂单层MoS_(2.的有效缺陷工程策略,该策略在实验上通过简便的化学气相沉积(CVD)一步法成功实现.所制备的具有亚毫米(~32.μm)级的大尺寸样品的光致发光可实现高达两个数量级的增强,并伴随着载流子寿命的显著增强.这一现象主要归因于Sr掺杂后MoS_(2.体系中其三激子向激子转换.与此同时,掺杂样品的辐射质量和稳定性也显著提升.第一性原理计算进一步阐明了其调控机制,即在MoS_(2.中引入适当互补缺陷能级与其自身的缺陷能级协同,从而可调节其载流子组分,以实现光致发光的显著增强.此外,我们的缺陷工程策略也适用于其他掺杂剂,如钙掺杂剂.我们的工作报告了一种可以显著提升单层MoS_(2.的荧光性能的有效缺陷工程策略,这为设计和调控二维TMDCs的光电特性提供一种极具前途的方法.

关键词： MoS_(2. substitutional doping photoluminescence in-tensity enhancement first-principles calculations

维普期刊数据库

Evidence for moiréintralayer excitons in twisted WSe_(2./WSe_(2. homobi layer superlattices

在线全文

学校读者我要写书评

暂无评论

Light(Science & Applications) 2022年第7期11卷 1493-1500页

作者： Biao Wu Haihong Zheng Shaofei Li Junnan Ding Jun He Yujia Zeng Keqiu Chen Zongwen Liu shula Chen Anlian Pan Yanping Liu School of Physics and Electronics Hunan Key Laboratory for Super-microstructure and Ultrafast ProcessCentral South University932 South Lushan RoadChangshaHunan 410083China State Key Laboratory of High-Performance Complex Manufacturing Central South University932 South Lushan RoadChangshaHunan 410083China Department of Applied Physics School of Physics and ElectronicsHunan UniversityChangsha 410082China School of Chemical and Biomolecular Engineering The University of SydneySydneyNSW 2006Australia The University of Sydney Nano Institute The University of SydneySydneyNSW 2006Australia Hunan Institute of Optoelectronic Integration College of Materials Science and EngineeringHunan UniversityChangshaHunan 410082China Shenzhen Research Institute of Central South University A510aVirtual University BuildingSouthern DistrictHigh-tech Industrial ParkYuehai StreetNanshan DistrictShenzhenChina

Recent advances in twisted van der Waals heterostructure superlattices have emerged as a powerful and attractive platform for exploring novel condensed matter physics due to the interplay between the moirépotential and Coulomb *** moirésuperlattices act as a periodic confinement potential in space to capture interlayer excitons(IXs),resulting in moiréexciton arrays,which provide opportunities for quantum emitters and many-body *** observation of moiréIXs in twisted transition-metal dichalcogenide(TMD)heterostructures has recently been widely ***,the capture and study of the moiréintralayer excitons based on TMD twisted homobilayer(T-HB)remain ***,we report the observation of moiréintralayer excitons in a WSe_(2./WSe_(2. T-HB with a small twist angle by measuring PL *** multiple split peaks with an energy range of 1.55-1.73 eV are different from that of the monolayer WSe_(2. exciton *** split peaks were caused by the trapping of intralayer excitons via the moiré*** confinement effect of the moirépotential on the moiréintralayer excitons was further demonstrated by the changing of temperature,laser power,and valley *** findings provide a new avenue for exploring new correlated quantum phenomena and their applications.

关键词： twisted layer quantum

基于CsPbBr_(3)纳米片的低阈值上转换等离子体激光器

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Science China Materials 2024年第7期67卷 2277-2284页

作者：张全龙翟继新刘晨曦钟倩倩纪志强易潇钟阳光何承林骆子煜汪练成陈舒拉潘安练 Key Laboratory for Micro-Nano Physics and Technology of Hunan Province Hunan Institute of Optoelectronic IntegrationCollege of Materials Science and EngineeringSchool of Physics and ElectronicsHunan UniversityChangsha 410082China School of Mechanical and Vehicle Engineering Hunan UniversityChangsha 410082China School of Physics and Electronics Hunan UniversityChangsha 410082China State Key Laboratory of Precision Manufacturing for Extreme Service Performance College of Mechanical and Electrical EngineeringCentral South UniversityChangsha 410083China

上转换激光器为新一代高度集成的非线性光电应用提供了一个强大的平台,解决了现代光子集成电路不断发展对小型化、低损耗和高质量非线性光源的诉求.然而,对于具有反斯托克斯过程的上转换激光器,减小尺寸和阈值是其不可避免的巨大挑战.... 详细信息

上转换激光器为新一代高度集成的非线性光电应用提供了一个强大的平台,解决了现代光子集成电路不断发展对小型化、低损耗和高质量非线性光源的诉求.然而,对于具有反斯托克斯过程的上转换激光器,减小尺寸和阈值是其不可避免的巨大挑战.本文报道了一种基于CsPbBr_(3)纳米片的室温上转换等离子体纳米激光器,该激光器在较宽的尺寸范围内表现出显著的阈值降低,同时依旧保持着较高的品质因子.更激动人心的是,本文成功制造了厚度低至70 nm的小型化上转换等离子体激光器,突破光学衍射极限到深亚波长范围.同时,本文利用仿真模拟描述了双光子激发光场的分布情况,揭示了等离子体辅助激光发射并降低阈值的过程.此外,SiO_(2.绝缘层厚度依赖实验证明了双光子激发光约束强度和珀塞尔效应的可调谐特性,这为实现等离子体器件性能的有效调控提供了有效方案.本文展示了高效和低阈值的上转换等离子体纳米激光器,为片上非线性光源的发展奠定了夯实的基础.

关键词： upconversion plasmonic nanolasers perovskites Purcell effect

维普期刊数据库

在线全文

学校读者我要写书评

暂无评论

Dancing Rose

China Today 2001年第12期50卷 58-59页

作者： Zuo shula

Features Aly Rose, an American dancer who lives in China. Career and family background; Experiences in China; Reasons for choosing to stay in China.

关键词： Dancing Rose

Hollywood Is Not the Role Model for Chinese Films

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

China Today 2001年第4期50卷 36-39页

作者： shula, Zuo

Compares the motion picture industry in the United States (U.S.) and China. Stereotyping of Hollywood films; Influence of U.S. directors on Chinese directors; Factors for the success of Chinese films.

关键词： Hollywood Is Not the Role Model for Chinese Films

Two-dimensional materials for future information technology: status and prospects

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of Electronic Science and Engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and Key Lab of Quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou Laboratory State Key Laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin Laboratory Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2.) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2. materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2. materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2. materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2. material research.

关键词： two-dimensional (2.) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

Cultural Stress Revisited

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

大家健康(学术版) 2011年第9期05卷 15-19页

作者： Hastings K shula Aizhong Liu Department of Epidemiology & Health Statistics School of Public Health Central South University

Cultural stress is no longer a rare phenomenon because the world has been reduced to the size of a village due to modern technology and advancements. It is a concept that grows in magnitude each year. More and more people are affected. In this paper, we discuss the assessment of cultural stress by combining some instruments like the Perceived Stress Scale, the Depression Anxiety, and Stress Scale with the Cultural Stress Scale. They appear to be valid and can be used across different cultures. We discuss the need to come up with a standard instrument for measuring cultural stress as opposed to having so many. We also outline ways of coping with cultural stress as it occurs at different stages. There is need for more research to counter the negative effects of cultural stress.

关键词： Cultural stress Sojourner People at risk Coping mechanisms