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Ultrafast modulable 2DEG Huygens metasurface

Photonics Research 2024年第5期12卷 1004-1015页

作者： HONGXIN ZENG XUAN CONG SHIQI WANG SEN GONG LIN HUANG LAN WANG HUAJIE liang FENG LAN HAOYI CAO ZHENG WANG WEIPENG WANG shixiong liang ZHIHONG FENG ZIQIANG YANG YAXIN ZHANG TIE JUN CUI Terahertz Communication Laboratory School of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611730China Zhangjiang Laboratory Shanghai 201210China Yangtze Delta Region Institute(Huzhou) University of Electronic Science and Technology of ChinaHuzhou 313098China National Key Laboratory of Solid-State Microwave Devices and Circuits Hebei Semiconductor Research InstituteShijiazhuang 050051China Institute of Electromagnetic Space and State Key Laboratory of Millimeter Waves Southeast UniversityNanjing 210096China

Huygens metasurfaces have demonstrated remarkable potential in perfect transmission and precise wavefront modulation through the synergistic integration of electric resonance and magnetic ***,prevailing active or reconfigurable Huygens metasurfaces,based on all-optical systems,encounter formidable challenges associated with the intricate control of bulk dielectric using laser equipment and the presence of residual thermal effects,leading to limitations in continuous modulation ***,we present an ultrafast electrically driven terahertz Huygens metasurface that comprises an artificial microstructure layer featuring a two-dimensional electron gas(2DEG)provided by an AlGaN/GaN heterojunction,as well as a passive microstructure *** precise manipulation of the carrier concentration within the 2DEG layer,we effectively govern the current distribution on the metasurfaces,inducing variations in electromagnetic resonance modes to modulate terahertz *** modulation mechanism achieves high efficiency and contrast for terahertz wave *** investigations demonstrate continuous modulation capabilities of up to 6 GHz,a modulation efficiency of 90%,a transmission of 91%,and a remarkable relative operating bandwidth of 55.5%.These significant advancements substantially enhance the performance of terahertz metasurface ***,our work not only enables efficient amplitude modulation but also introduces an approach for the development of high-speed and efficient intelligent transmissive metasurfaces.

关键词： heterojunction precise surface

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High Power GaN Doubler with High Duty Cycle Pulse Based on Local Non-Reflection Design

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Chinese Journal of Electronics 2024年

作者： Yazhou DONG Tianchi ZHOU shixiong liang Guodong GU Hongji ZHOU Jianghua YU Hailong GUO Yaxin ZHANG School of Electronic Engineering University of Electronic Science and Technology of China National Key Laboratory of Solid-State Microwave Devices and Circuits Hebei Semiconductor Research Institute

The study focuses on the development of gallium nitride(GaN) Schottky barrier diode(SBD) frequency doublers for terahertz technology. The low conversion efficiency of these doublers limits their practical applications. To address this challenge, the paper proposes a multi-objective local no-reflection design method based on a three-dimensional electromagnetic structure. The method aims to improve the coupling efficiency of input power and reduce the reflection of power output. Experimental results indicate that the proposed method significantly improves the performance of GaN SBD frequency doublers, achieving an efficiency of 16.9% and a peak output power of 160m W at 175 GHz. These results suggest that the method can contribute to the further development of GaN SBD frequency doublers for terahertz technology.

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A Review of Terahertz Solid-state Electronic/Optoelectronic Devices and Communication Systems

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Chinese Journal of Electronics 2024年

作者： Wenbo LI Hongxin ZENG Lin HUANG Sen GONG Haoyi CAO Weipeng WANG Zheng WANG Hongji ZHOU shixiong liang Ziqiang YANG Yaxin ZHANG University of Electronic Science and Technology of China Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems Yangtze Delta Region Institute (Huzhou)University of Electronic Science and Technology of China Terahertz Institute Zhangjiang National Laboratory National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute

With the rapid development of modern communication technology, spectrum resources have become non-renewable and precious resources, and the terahertz frequency band has entered people's vision. Nowadays, terahertz communication technology has become one of the core technologies for future high-capacity and high-rate communication. This paper discusses and analyzes the core technologies related to the field of terahertz *** introduce the characteristics, domestic and international comparisons and development trends of the core devices for terahertz communication, and also introduce and discuss the terahertz solid-state frequency mixing communication system, terahertz direct modulation communication system, and terahertz optoelectronic communication ***, we summarize the development of terahertz communication technology and the outlook of future applications.

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A Review of Terahertz Sources Based on Planar Schottky Diodes

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Chinese Journal of Electronics 2022年第3期31卷 467-487页

作者： KOU Wei liang shixiong ZHOU Hongji DONG Yazhou GONG Sen YANG Ziqiang ZENG Hongxin University of Electronic Science and Technology of China Yangtze Delta Region Institute (Huzhou) National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute

The special position of terahertz wave in the electromagnetic spectrum makes it possess the characteristics of orientation, broadband, penetration and low energy, which promotes the extensive research of terahertz wave in the fields of communication, radar, imaging,sensing, security inspection and so on. The solid-state terahertz sources based on semiconductor devices have attracted extensive attention in the field of terahertz information technology due to their characteristics such as being able to work at room temperature, being small in size, being easy to integrate and having good frequency stability. Terahertz planar Schottky diode is a kind of low parasitic semiconductor device. Its high cutoff frequency makes it work well in the terahertz range. The frequency multiplier based on planar Schottky diode is an important part of terahertz solid state source. In this review, the development of Schottky diodes technology in recent years have been introduced, including the structures and preparation of Schottky diodes. In addition, the current situation and performance of different types of terahertz sources based on Schottky diodes are further introduced,and the future development trend is discussed.

关键词： Terahertz source Planar Schottky diodes Frequency multiplier Terahertz diodes

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Dynamic bifunctional THz metasurface via dual-mode decoupling

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Photonics Research 2022年第9期10卷 2008-2014页

作者： XUAN CONG HONGXIN ZENG SHIQI WANG QIWU SHI shixiong liang JIANDONG SUN SEN GONG FENG LAN ZIQIANG YANG YAXIN ZHANG Terahertz Science and Technology Research Center University of Electronic Science and Technology of ChinaChengdu 610000China College of Materials Science and Engineering Sichuan UniversityChengdu 610065China National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research InstituteShijiazhuang 050051China Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China Yangtze Delta Region Institute(HuZhou) University of Electronic Science and Technology of ChinaHuzhou 313001China

Metasurfaces have powerful light field manipulation capabilities and have been researched and developed extensively in various *** an increasing demand for diverse functionalities,terahertz(THz)metasurfaces are also expanding their *** particular,integrating different functionalities into a single device is a compelling domain in *** this work,we demonstrate a functionally decoupled THz metasurface that can incorporate any two functions into one metasurface and switch dynamically through external *** proposed metasurface is formed by the combination of split-ring resonators and phase change material vanadium dioxide(VO_(2)).It operates in the single-ring resonant mode and double-ring resonant mode with varying VO_(2)in insulating and metallic states,*** importantly,the phase modulation is independent in two operating modes,and both cover a 360°cross-polarized phase with efficient polarization *** characteristic makes it obtain arbitrary independent phase information on the metasurface with different modes to switch dual functions ***,we experimentally demonstrate the functions of a tunable focal length and large-angle focus deflection of a THz off-axis parabolic mirror to verify the dual-function switching characteristics of the functionally decoupled *** functionally decoupled metasurface developed in this work broadens the way for the research and application of multifunctional modulation devices in the THz band.

关键词： surface. functional resonant

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Dependence of the stability of organic light-emitting diodes on driving mode

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Chinese Science Bulletin 2011年第21期56卷 2210-2214页

作者： ZHANG WenWen WU ZhaoXin ZHANG XinWen liang shixiong JIAO Bo HOU Xun State Key Laboratory of Transient Optics and Photonics Xi’an Institute of Optics and Precision MechanicsChinese Academy of SciencesXi’an 710119China Key Laboratory for Physical Electronics and Devices of the Ministry of Education School of Electronic and Information EngineeringXi’an Jiaotong UniversityXi’an 710049China Key Laboratory of Photonics Technology for Information of Shaanxi Province School of Electronic and Information EngineeringXi’an Jiaotong UniversityXi’an 710049China

We investigated the effects of pulsed current (PC) and direct current (DC) driving modes on the stability of organic light-emitting diodes with and without hole-injection layers (HILs).Two different HIL materials were used:copper phthalocyanine (CuPc) and 4,4',4″-tris(3-methylphenylphenylamino)triphenylamine (m-MDTATA).It was found that the half-lives of devices using PC driving modes were different from those of comparable devices using DC driving *** the devices without HILs,with CuPc HILs and with MTDATA HILs,the half-lives of the devices were changed by factors of 1.91,1.41 and 0.86,respectively,when operated in PC rather than DC driving *** analysis of the electrical characteristics of the corresponding hole-only devices showed that the number of holes injected into devices was greatly reduced by inserting an m-MTDATA layer compared with other *** results indicate that different ratios of injected electrons and holes can be obtained in these ***,these ratios play a dominant role in the dependence of the stability of the device on the driving mode.

关键词：有机发光二极管驾驶模式稳定 ILS设备驱动模式脉冲电流 CuPc 电气特性

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260 GHz GaN高功率三倍频器设计

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太赫兹科学与电子信息学报 2024年第3期22卷 290-295页

作者：盛百城宋旭波顾国栋张立森刘帅万悦魏碧华李鹏雨郝晓林梁士雄冯志红中国电子科技集团公司第十三研究所河北石家庄050051 固态微波器件与电路全国重点实验室河北石家庄050051

基于GaN太赫兹二极管芯片,采用非平衡式电路结构,设计了一款260 GHz三倍频器。采用GaN肖特基二极管芯片提高电路的耐受功率和输出功率;采用“减高+减宽”的输出波导结构抑制二次谐波;采用高低阻抗带线结构设计了倍频器的输入滤波器和输... 详细信息

基于GaN太赫兹二极管芯片,采用非平衡式电路结构,设计了一款260 GHz三倍频器。采用GaN肖特基二极管芯片提高电路的耐受功率和输出功率;采用“减高+减宽”的输出波导结构抑制二次谐波;采用高低阻抗带线结构设计了倍频器的输入滤波器和输出滤波器。测试结果显示,该三倍频器在261 GHz峰值频率下,实现最大输出功率为69.1 mW,转换效率为3.3%,同时具有较好的谐波抑制特性。

关键词：三倍频器太赫兹肖特基二极管非平衡式倒装

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Real-time programmable metasurface for terahertz multifunctional wave front engineering

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Light(Science & Applications) 2023年第9期12卷 1795-1806页

作者： Feng Lan Luyang Wang Hongxin Zeng shixiong liang Tianyang Song Wenxin Liu Pinaki Mazumder Ziqiang Yang Yaxin Zhang Daniel M.Mittleman Sichuan THz Communication Technology Engineering Research Center School of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731China Yangtze Delta Region Institute(Huzhou) University of Electronic Science and Technology of ChinaHuzhou 313000China Zhangjiang Laboratory Shanghai 201204China National Key Laboratory of Solid-State Microwave Devices and Circuits Hebei Semiconductor Research InstituteShijiazhuang 050051China Aerospace Information Research Institute Chinese Academy of SciencesBeijing 100094China University of Chinese Academy of Sciences School of ElectronicElectrical and Communication EngineeringBeijing 101408China Department of Electrical Engineering and Computer Science University of MichiganAnn ArborMI 48109USA School of Engineering Brown UniversityProvidenceRI 02912USA

Terahertz(THz)technologies have become a focus of research in recent years due to their prominent role in envisioned future communication and sensing *** of the key challenges facing the field is the need for tools to enable agile engineering of THz wave ***,we describe a reconfigurable metasurface based on GaN technology with an array-of-subarrays *** subwavelength-spaced array,under the control of a 1-bit digital coding sequence,can switch between an enormous range of possible configurations,providing facile access to nearly arbitrary wave front control for signals near 0.34 *** demonstrate wide-angle beam scanning with 1°of angular precision over 70 GHz of bandwidth,as well as the generation of multi-beam and diffuse wave fronts,with a switching speed up to 100 *** device,offering the ability to rapidly reconfigure a propagating wave front for beam-forming or diffusively scattered wide-angle coverage of a scene,will open new realms of possibilities in sensing,imaging,and networking.

关键词： wave scattered arbitrary

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Source-field-plated Ga_2O_3 MOSFET with a breakdown voltage of 550 V

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Journal of Semiconductors 2019年第1期40卷 77-79页

作者： Yuanjie Lü Xubo Song Zezhao He Yuangang Wang Xin Tan shixiong liang Cui Wei Xingye Zhou Zhihong Feng National Key Laboratory of Application Specific Integrated Circuit (ASIC) Hebei Semiconductor Research Institute

Ga_2O_3 metal–oxide–semiconductor field-effect transistors(MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-Ga_2O_3 film, which was grown by metal organic chemical vapor deposition(MOCVD) on an Fedoped semi-insulating(010) Ga_2O_3 substrate. The structure consisted of a 400 nm unintentionally doped(UID) Ga_2O_3 buffer layer and an 80 nm Si-doped channel layer. A high k HfO_2 gate dielectric film formed by atomic layer deposition was employed to reduce the gate leakage. Moreover, a source-connected field plate was introduced to enhance the breakdown characteristics. The drain saturation current density of the fabricated device reached 101 mA/mm at V_(gs) of 3 V. The off-state current was as low as 7.1 ×10^(-11) A/mm, and the drain current I_(ON)/I_(OFF) ratio reached 10~9. The transistors exhibited three-terminal off-state breakdown voltages of 450 and 550 V, corresponding to gate-to-drain spacing of 4 and 8 μm, respectively.

关键词： Ca2O3 MOSFET breakdown voltage filed plate

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High-stability _(4)H-SiC avalanche photodiodes for UV detection at high temperatures

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Chinese Optics Letters 2023年第3期21卷 123-126页

作者：周幸叶吕元杰郭红雨宋旭波王元刚梁士雄卜爱民冯志红 National Key Laboratory of ASIC Hebei Semiconductor Research InstituteShijiazhuang 050051China

In this work,high-stability _[4]H-SiC avalanche photodiodes[APDs]for ultraviolet[UV]detection at high temperatures are fabricated and *** the temperature increasing from room temperature to 150℃,a very small temperature coefficient of 7.4 m V/℃is achieved for the avalanche breakdown voltage of *** the first time,the stability of 4H-SiC APDs is verified based on an accelerated aging test with harsh stress *** different stress conditions are selected with the temperatures and reverse currents of 175℃/100μA,200℃/100μA,and 200℃/500μA,*** results show that our 4H-SiC APD exhibits robust high-temperature performance and can even endure more than120 hours at the harsh aging condition of 200℃/500μA,which indicates that 4H-SiC APDs are very stable and reliable for applications at high temperatures.

关键词： silicon carbide photodiod

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