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Precipitation Regionalization Using Self-Organizing Maps for Mumbai City, India

Journal of Water Resource and Protection 2018年第9期10卷 939-956页

作者： Amit Sharad Parchure shirish kumar gedam Centre of Studies in Resources Engineering Indian Institute of Technology (IIT) Bombay India

The detailed analysis of individual rain events characteristics is an essential step for improving our understanding of variation in precipitation over different topographies. In this study, the homogeneity among rain gauges was investigated using the concept of “rain event properties,” linking them to the main atmospheric system that affects the rainfall in the region. For this, eight properties of more than 23,000 rain events recorded at 47 meteorological stations in Mumbai, India, were analyzed utilizing seasonal (June-September) rainfall records over 2006-2016. The high similarities among the properties indicated the similarities among the rain gauges. Furthermore, similar rain gauges were distinguished, investigated and characterized by cluster analysis using self-organizing maps (SOM). The cluster analysis results show six clusters of similarly behaving rain gauges, where each cluster addresses one isolated class of variables for the rain gauge. Additionally, the clusters confirm the spatial variation of rainfall caused by the complex topography of Mumbai, comprising the flatland near the Arabian Sea, high-rise buildings (urban area) and mountain and hills areas (Sanjay Gandhi National Park located in the northern part of Mumbai).

关键词： Minimum Inter-Event Time Self-Organizing Map Rain Event Dendrogram

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A novel design approach of charge plasma tunnel FET for radio frequency applications

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Journal of Semiconductors 2019年第5期40卷 77-83页

作者： Shivendra Yadav Alish Pamnani Dheeraj Sharma Anju gedam Atul kumar Neeraj Sharma Indian Institute of Information Technology Design and Manufacturing National Institute of Technology Ramrao Adik Institute of Technology

In this paper, the impact of extra electron source(EES) and dual metal gate engineering on conventional charge plasma TFET(CP-TFET) have been done for improving DC and analog/RF parameters. CP-TFET structure is upgraded to double source CP-TFET(DS-CP-TFET) by placing an EES below the source/channel junction for enhancing the device performance in terms of driving current and RF figures of merit(FOMs). But, in spite of these pros, the approach is having cons of higher leakage current similar to MOSFET and negative conductance(inherent nature of TFET). Both the issues have been resolved in the double source dual gate CP-TFET(DS-DG-CP-TFET) by gate workfunction engineering and drain underlapping respectively. Additionally,for getting the optimum performance of DS-DG-CP-TFET, the device sensitivity has been investigated in terms of position of EES,length of drain electrode and workfunction of gate electrode 1(GE1).

关键词： ambipolar current charge plasma EES and dual metal gate engineering

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