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Circuits and Systems 2011年第4期2卷 274-280页

作者： shilpi birla Rakesh Kumar Singh Manisha Pattanaik Department of Electronics and Communication (ECE) Sir Padampat Singhania University (SPSU) Department of Electronics and Communication (ECE) Bipin Tripathi Kumaon Institute of Technology (BTKIT) VLSI Group Atal Bihari Vajpayee Indian Institute of Inf

Due to continuous scaling of CMOS, stability is a prime concerned for CMOS SRAM memory cells. As scaling will increase the packing density but at the same time it is affecting the stability which leads to write failures and read disturbs of the conventional 6T SRAM cell. To increase the stability of the cell various SRAM cell topologies has been introduced, 8T SRAM is one of them but it has its limitation like read disturbance. In this paper we have analyzed a novel PP based 9T SRAM at 45 nm technology. Cell which has 33% increased SVNM (Static Voltage Noise Margin) from 6T and also 22%.reduced leakage power. N curve analysis has been done to find the various stability factors. As compared to the 10T SRAM cell it is more area efficient.

关键词： N Curve Scaling SVNM (Static Voltage Noise Margin) Leakage Power 9T SRAM Cell

Effect of Temperature &Supply Voltage Variation on Stability of 9T SRAM Cell at 45 nm Technology for Various Process Corners

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Circuits and Systems 2012年第2期3卷 200-204页

作者： Manisha Pattanaik shilpi birla Rakesh Kumar Singh Department of Electronics & Communications Bipin Chandra Tripathi kumaon Engineering College Dwarahat India Department of Electronics & Communications Sir Padampat Singhania University Udaipur India VLSI Group Atal Bihari Vajpayee Indian Institute of Information Technology and Management Gwalior India

Due to the continuous rising demand of handheld devices like iPods, mobile, tablets;specific applications like biomedical applications like pacemakers, hearing aid machines and space applications which require stable digital systems with low power consumptions are required. As a main part in digital system the SRAM (Static Random Access Memory) should have low power consumption and stability. As we are continuously moving towards scaling for the last two decades the effect of this is process variations which have severe effect on stability, performance. Reducing the supply voltage to sub-threshold region, which helps in reducing the power consumption to an extent but side by side it raises the issue of the stability of the memory. Static Noise Margin of SRAM cell enforces great challenges to the sub threshold SRAM design. In this paper we have analyzed the cell stability of 9T SRAM Cell at various processes. The cell stability is checked at deep submicron (DSM) technology. In this paper we have analyzed the effect of temperature and supply voltage (Vdd) on the stability parameters of SRAM which is Static Noise Margin (SNM), Write Margin (WM) and Read Current. The effect has been observed at various process corners at 45 nm technology. The temperature has a significant effect on stability along with the Vdd. The Cell has been working efficiently at all process corners and has 50% more SNM from conventional 6T SRAM and 30% more WM from conventional 6T SRAM cell.

关键词： DSM Technology Process Corners Write Margin Read Current Static Noise Margin

Analysis of 8T SRAM Cell at Various Process Corners at 65 nm Process Technology

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Circuits and Systems 2011年第4期2卷 326-329页

作者： shilpi birla Neeraj Kumar Shukla Kapil Rathi Rakesh Kumar Singh Manisha Pattanaik Department of Electronics & Communications Sir Padampat Singhania University Department of ECE ITM University Texas Instruments

In Present scenario battery-powered hand-held multimedia systems become popular. The power consumption in these devices is a major concern these days for its long operational life. Although various techniques to reduce the power dissipation has been developed. The most adopted method is to lower the supply voltage. But lowering the Vdd reduces the gate current much more rapidly than the sub-threshold current and degrades the SNM. This degraded SNM further limits the voltage scaling. To improve the stability of the SRAM cell topology of the conventional 6T Static Random Access Memory (SRAM) cell has been changed and revised to 8T and 10T cell, the topologies. This work has analyzed the SRAM’s Static Noise Margin (SNM) at 8T for various process corners at 65nm technology. It evaluates the SNM along with the write margins of the cell along with the cell size of 8T SRAM bit-cell operating in sub-threshold voltage at various process corners. It is observed that an 8T cell has 13 % better write margin than conventional 6T SRAM cell. This paper analyses the dependence of SNM of SRAM memory cell on supply voltage, temperature, transistor sizing in 65nm technology at various process corners (TT, SS, FF, FS, and SF).

关键词： SNM Sub-Threshold Current Gate Current Process Corners

Comparative evaluation of microscopy,OptiMAL® and 18S rRNA gene based multiplex PCR for detection of Plasmodium falciparum & Plasmodium vivax from field isolates of Bikaner,India

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Asian Pacific Journal of Tropical Medicine 2013年第5期6卷 346-351页

作者： Deepak Pakalapati shilpi Garg Sheetal Middha Abhishek Kochar Amit Kumar Subudhi Boopathi Pon Arunachalam Sanjay Kumar Kochar Vishal Saxena Pareek RP Jyoti Acharya Dhanpat Kumar Kochar Ashis Das Center for Biotechnology Dept of Biological SciencesBirla Institute of Technology and SciencePilani-333031RajasthanIndia Department of Medicine Sardar Patel Medical CollegeBikaner-334003RajasthanIndia Medical Centre Birla Institute of Technology and SciencePilani-333031RajasthanIndia Kothari Medical and Research Institute BikanerRajasthan-334003India

Objective:To evaluate microscopy,OptiMAL? and multiplex PCR for the identification of Plasmodium falciparum（***） and Plasmodium vivax（***） from the field isolates of Bikaner,Rajasthan（Northwest India）.Methods:In this study,a multiplex PCR（*** and ***） was further developed with the incorporation of Plasmodium malariae（***） specific primer and also a positive *** performance of microscopy,plasmodium lactate dehydrogenase（pLDH） based malaria rapid diagnostic test OptiMAL? and 18S rRNA gene based multiplex PCR for the diagnosis of *** and *** was ***:The three species multiplex PCR ***,*** and ***) with an inbuilt positive control was developed and *** comparison with multiplex PCR,which showed the sensitivity and specificity of 99.36%（95%CI,98.11%-100.00%） and 100.00%（95%CI,100.00%-100.00%）,the sensitivity and specificity of microscopy was 90.44%（95%CI,88.849-95.04%） and 99.22%（95% CI,97.71%-100.00%）,and OptiMAL? was 93.58%（95%CI,89.75%-97.42%） and 97.69%（95%CI, 95.10%-100.00%）.The efficiencies were 99.65%,95.10%and 95.45%for multiplex *** and OptiMAL?.***:Our results raise concerns over the overall sensitivities of microscopy and OptiMAL?,when compared to the multiplex PCR and thus stress the need for new molecular interventions in the accurate detection of the malarial *** further highlights the fact that further developments are needed to improve the performance of rapid diagnostic tests at field level.

关键词： Malaria diagnosis Microscopy OptiMAL® Multiplex PCR 18S rRNA gene Plasmodium