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Lattice Dynamics Models to Predict Transmission Properties of Flexural Waves in One-Dimensional Atom Chains with Defects

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Acta Mechanica Solida Sinica 2023年第1期36卷 105-115页

作者： Hao Wu shihua huang Jianyi Luo Laitong He Youdi Kuang School of Mechanics and Construction Engineering MOE Key Laboratory of Disaster Forecast and Control in EngineeringJinan UniversityGuangzhou 510632China School of Electro-Mechanical Engineering Zhongkai University of Agriculture and EngineeringZhuhai 519041China School of Applied Physics and Materials Wuyi UniversityJiangmen 529000China School of Civil Engineering and Architecture Wuyi UniversityJiangmen 529000China

Flexural waves usually propagate in one-and two-dimensional *** further our understanding on their transmission properties from the viewpoint of discrete lattice dynamics,we systematically established analytical atom chain models with mass defects and side *** mechanisms of the Bragg scattering and the local resonance corresponding to mass defects and side branches,respectively,are elucidated by means of the present *** results from the models show that increasing the number of mass defects or side branches decreases the transmission magnitude gradually,and the finite-width phononic bandgap may form due to the periodical arrangement of *** interplay between the local resonance and the Bragg scattering gives rise to the narrow phononic bandgap for lattice chains only with periodical side *** width of the bandgap strongly depends on the stiffness of side *** transmission is insensitive to the tensile strain considered for both kinds of defects,but significantly decreases with an increase in damping or wave *** present work helps further our understanding on the dynamics of flexural waves.

关键词： Transmission of flexural waves Lattice dynamics of chains Defects Damping Tensile strains

Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film

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Journal of Semiconductors 2017年第4期38卷 23-26页

作者： Da Chen shihua huang Lü He Physics Department Zhejiang Normal UniversityJinhua 321004China

SiOxNy films with different oxygen concentrations were fabricated by reactive magnetron sputtering,and the resistive switching characteristics and conduction mechanism of Cu/SiOxNy/ITO devices were *** Cu/SiOxNy/ITO device with SiOxNy deposited in 0.8-sccm O2 flow shows a reliable resistive switching behavior,including good endurance and retention *** the conductivity of SiOxNy increases with the increase of the oxygen content dynamical electron trapping and detrapping is suggested to be the conduction *** temperature dependent I-V measurement indicates that the carrier transport can be ascribed to the hopping conduction rather than the metallic conductive filament.

关键词： silicon oxynitride resistive random access memory oxygen concentration

Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device

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Journal of Semiconductors 2017年第12期38卷 22-25页

作者： Jiahua Zhang Da Chen shihua huang Physics Department Zhejiang Normal UniversityJinhua 321004China

The influence of oxygen doping on resistive-switching characteristics of Ag/a-Si/p^＋-c-Si device was investigated. By oxygen doping in the growth process of amorphous silicon, the device resistive-switching performances, such as the ON/OFF resistance ratios, yield and stability were improved, which may be ascribed to the significant reduction of defect density because of oxygen incorporation. The device I-V characteristics are strongly dependent on the oxygen doping concentration. As the oxygen doping concentration increases, the Si-rich device gradually transforms to an oxygen-rich device, and the device yield, switching characteristics, and stability may be improved for silver/oxygen-doped a-Si/p^＋-c-Si device. Finally, the device resistive-switching mechanism was ana- lyzed. Key words： amorphous silicon; resistive switching; oxygen doping

关键词： amorphous silicon resistive switching oxygen doping

Optimal(24u, {3, 4}, 1, {2/3, 1/3}) Optical Orthogonal Codes

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Journal of Mathematical Research with Applications 2016年第4期36卷 379-393页

作者： shihua huang Xiaomiao WANG Department of Mathematics Ningbo University

Variable-weight optical orthogonal codes(OOCs) were introduced by G. C. YANG for multimedia optical CDMA systems with multiple quality of service(Qo S) requirements. In this paper, some infinite classes of optimal cyc... 详细信息

关键词： cyclic packing optical orthogonal code perfect cyclic packing skew starter variable-weight optical orthogonal code

Linear Electron-Phonon Interaction in Organic Spectral Hole-Burning Materials

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Chinese Physics Letters 1993年第10期10卷 634-637页

作者： TIAN Mingzhen LUO Baozhu LI Wenlian huang shihua YU Jiaqi YANG Kaihai Cliangchun Institu te of Physics AcademiaSinicaChangchun 130021 Rese&rch Center Liaoning Normal UniversityDalian 116022

The linear electron-phonon interaction in polymethylmethacrylate(PMMA)doped with electron donor zinc-tetraphenylbenzoporphyrin(ZnTPBP)and acceptor p-hydroxybenzsAdhyde(PHBA)t or p-aininoacetophenone(PAAP)was investigated by photon-gated spectral hole-burning(PHB),The aim is to study the factors that&ffed the linear elec iron-ph on on coupling and the thermal stability of spectral holes in the organic film samples.

关键词： spectral Electron donor

Super-Edge-Connectivity of G(k,d,s)(s≥k/2)

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Wuhan University Journal of Natural Sciences 2014年第3期19卷 189-192页

作者： YANG Zhaolan huang shihua YANG Rong Normal School Lanzhou University of Arts and Science School of Mathematics and Statistics Northwest Normal University

A graph G is super-edge-connected,for short super-λ,if every minimum edge-cut consists of edges adjacent to a vertex of minimum *** overlap graph G（k,d,s）is undirected,simple graph with vertex set V={v｜v=1（）kv…v;vi∈{1,2,…,d},i=1,…,k}.Two vertices u=（u1…uk）and v=（v1…vk）are adjacent if and only if us＋i=vi or vs＋i=ui（i=1,…,k-s）.In particular G（k,d,1）is just an undirected de Bruijn *** this paper,we show that the diameter of G（k,d,s）is k s,the girth is ***,we prove that G（k,d,s）（s≥k/2）is super-λ.

关键词： alphabet overlap digraph de Bruijn graph alphabet overlap graph diameter girth edge connectivity super-λ

Simulation approach for optimization of ZnO/c-WSe2 heterojunction solar cells

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Journal of Semiconductors 2017年第4期38卷 68-72页

作者： shihua huang Qiannan Li Dan Chi Xiuqing Meng Lü He Materials Physics Department Zhejiang Normal UniversityZhejiang 321004China

Taking into account defect density in WSe2,interface recombination between ZnO and WSe2,we presented a simulation study of ZnO/crystalline WSe2 heterojunction（HJ） solar cell using wxAMPS simulation *** optimal conversion efficiency 39.07%for n-ZnO/p-c-WSe2 HJ solar cell can be realized without considering the impact of *** defect density（〉 1.0×10^11cm^-2） in c-WSe2 and large trap cross-section（〉 1.0×10^-10cm^2） have serious impact on solar cell efficiency.A thin p-WSe2 layer is intentionally inserted between ZnO layer and c-WSe2 to investigate the effect of the interface *** interface properties are very crucial to the performance of ZnO/c-WSe2 HJ solar *** affinity of ZnO value range between 3.7-4.5 eV gives the best conversion efficiency.

关键词： simulation heterojunction solar cells transport properties

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锗硅量子阱结构带间吸收边研究

光子学报 2006年第11期35卷 1676-1679页

作者：黄仕华浙江师范大学物理系浙江金华321004

利用光电流谱的方法对锗硅量子阱结构的带间吸收边进行了研究.实验观察到了在不同的偏压和温度下,锗硅量子阱结构的带间吸收边谱线发生了有规律的变化.通过对锗硅量子阱材料的光电流谱的带间跃迁吸收边的拟合,得到了硅导带到锗价带的能... 详细信息

利用光电流谱的方法对锗硅量子阱结构的带间吸收边进行了研究.实验观察到了在不同的偏压和温度下,锗硅量子阱结构的带间吸收边谱线发生了有规律的变化.通过对锗硅量子阱材料的光电流谱的带间跃迁吸收边的拟合,得到了硅导带到锗价带的能带宽度分别为1.043 eV和1.050 eV.随着外加电场的增强,带边的吸收曲线向低能方向移动.通过理论计算得到了带间跃迁吸收边的漂移量与外加电场的关系,并与实验吻合较好.随着温度的降低,带间吸收边向高能方向偏移,对于这一现象给出了定性的解释,并通过拟合得到了禁带宽度随温度的变化率.

关键词：锗硅量子阱光电流谱带间吸收边外加电场

A comparative study of CuO/TiO_2-SnO_2,CuO/TiO_2 and CuO/SnO_2 catalysts for low-temperature CO oxidation

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Journal of Natural Gas Chemistry 2009年第4期18卷 449-452页

作者： Kairong Li Yaojie Wang Shurong Wang Baolin Zhu Shoumin Zhang Weiping huang shihua Wu Department of Chemistry Nankai University Tianjin 300071 China

Nanometer SnO2 particles were synthesized by sol-gel dialytic processes and used as a support to prepare CuO supported catalysts via a deposition-precipitation method. The samples were characterized by means of TG-DTA, XRD, H2-TPR and XPS. The catalytic activity of the CuO/TiO2-SnO2 catalysts was markedly depended on the loading of CuO, and the optimum CuO loading was 8 wt.% （Tloo = 80 ℃）. The CuO/TiO2-SnO2 catalysts exhibited much higher catalytic activity than the CuO/TiO2 and CuO/SnO2 catalysts. H2-TPR result indicated that a large amount of CuO formed the active site for CO oxidation in 8 wt.% CuO/TiO2-SnO2 catalyst.

关键词： sol-gel dialytic processes CuO/TiO2-SnO2 catalyst low-temperature CO oxidation