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Very long wave infrared quantum cascade detector based on modular band structure

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Chinese Optics Letters 2024年第8期22卷 119-123页

作者： Kai Guo Yu Chen Yixuan Zhu Kun Li shenqiang zhai Fengqi Liu Jilong Tang Xiaohua Wang Zhipeng Wei Junqi Liu State Key Laboratory of High Power Semiconductor Lasers School of PhysicsChangchun University of Science and TechnologyChangchun 130022China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Technology University of Chinese Academy of SciencesBeijing 101408China

The optoelectronic performance of quantum cascade detectors(QCDs)is highly sensitive to the design of the energy level structure,leading to the inability of a single structure to achieve broad wavelength *** address this issue,we propose and demonstrate a modular concept for very long wave infrared(VLWIR)QCDs based on a miniband diagonal transition *** modular design makes the wavelength tuning only need to be adjusted for the absorption quantum well module rather than for the whole active *** simulation shows that the wavelength tuning range is 39.6 meV(~14–30μm).To prove the feasibility of the scheme,three samples with different absorption well widths were fabricated and *** 10 K,the response wavelengths of the three QCDs are 14,16,and 18μm,respectively,corresponding to responsivities and detectivities exceeding 2 mA/W and 1×10^(10)Jones.

关键词： quantum cascade detector very long wave infrared modular band structure miniband diagonal transition wide tuning range

Mode-switchable dual-color infrared quantum cascade detector

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Photonics Research 2024年第2期12卷 253-259页

作者： YIXUAN ZHU shenqiang zhai KUN LI KAI GUO QIANGQIANG GUO JINCHUAN ZHANG SHUMAN LIU LIJUN WANG FENGQI LIU JUNQI LIU Key Laboratory of Semiconductor Materials Science Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

In this paper,a patch-antenna-array enhanced quantum cascade detector with freely switchable operating modes among mid-wave,long-wave,and dual-color was proposed and *** dual-color absorption occurs in a single active region through an optimized coupled miniband diagonal-transition subbands arrangement,and a successful separation of the operation regimes was realized by two nested antenna arrays with different patch sizes up to room *** 77 K,the 5.7-μm channel achieved a peak responsivity of 34.6 mA/W and exhibited a detectivity of 2.0×10^(10)Jones,while the 10.0-μm channel achieved a peak responsivity of 87.5 mA/W,giving a detectivity of 5.0×10^(10)*** a polarization modulation of the incident light,the minimum cross talk of the mid-wave and the long-wave operating modes was 1:22.5 and 1:7.6,*** demonstration opens a new prospect for multicolor infrared imaging chip integration technology.

关键词： antenna polarization quantum

MOCVD生长的中红外高功率量子级联激光器

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发光学报 2024年第5期45卷 794-799页

作者：杨鹏昌李曼孙永强程凤敏翟慎强刘峰奇张锦川中国科学院半导体研究所固态光电信息重点实验室北京100083 中国科学院大学材料科学与光电技术学院北京100049 电磁空间安全全国重点实验室天津300308

量子级联激光器(QCL)是中远红外波段的优质光源,具有体积小、重量轻、电光转化效率高等诸多优势,在传感、通信和国防等领域有重要的应用前景。金属有机物化学气相沉积(MOCVD)技术作为更高效的外延方式,应发展适用于QCL的MOCVD外延生长... 详细信息

量子级联激光器(QCL)是中远红外波段的优质光源,具有体积小、重量轻、电光转化效率高等诸多优势,在传感、通信和国防等领域有重要的应用前景。金属有机物化学气相沉积(MOCVD)技术作为更高效的外延方式,应发展适用于QCL的MOCVD外延生长技术以满足快速增长的市场需求。本文报道了全结构由MOCVD技术外延的QCL,通过将传统的“双声子共振”有源区结构修订为“单声子共振结合连续态抽取”结构,减少了电子的热逃逸,改善了器件的温度特性。针对该结构,进一步改变了有源区的掺杂浓度,并对比了不同掺杂浓度对器件性能的影响。腔长8 mm、平均脊宽约6.7μm的较高掺杂有源区器件在20℃下连续输出功率达3.43 W,中心波长约4.6μm,电光转化效率达13.1%;8 mm腔长的较低掺杂有源区器件在20℃下连续输出功率达2.73 W,中心波长约4.5μm,阈值电流仅0.56 A,峰值电光转化效率达15.6%。器件的输出功率和电光转化效率较之前文献报道的MOCVD制备的QCL有明显提高。该结果表明,MOCVD完全具备生长高功率QCL的能力,这对推动QCL的技术进步具有重要意义。

关键词：量子级联激光器中红外高功率金属有机物化学气相沉积

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界面特性对InAs/GaSb Ⅱ型超晶格光学性质影响理论研究

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发光学报 2024年第5期45卷 817-823页

作者：马泽军李远朱申波程凤敏刘俊岐王利军翟慎强卓宁陈涌海张锦川刘舒曼刘峰奇中国科学院半导体研究所固态光电信息技术实验室北京100083 中国科学院大学材料科学与光电技术学院北京100049

InAs/GaSb Ⅱ型超晶格是中红外谱段光电子器件的核心结构,其Ⅱ型能带排列特点使电子、空穴在实空间分离而跨过界面,其非公共原子构型使得界面态丰富。我们在Burt-Foreman包络函数理论的基础上,讨论了不同界面态对超晶格电子能态和波函... 详细信息

InAs/GaSb Ⅱ型超晶格是中红外谱段光电子器件的核心结构,其Ⅱ型能带排列特点使电子、空穴在实空间分离而跨过界面,其非公共原子构型使得界面态丰富。我们在Burt-Foreman包络函数理论的基础上,讨论了不同界面态对超晶格电子能态和波函数的调控作用。理论计算表明,超晶格缓变界面和界面势两种不对称界面态分布,都会导致重空穴带的自旋劈裂,而只有施加界面势时才会使得轻空穴带发生自旋劈裂。此外,研究了改变阱宽和改变势垒时超晶格体系带隙的变化趋势。结果表明,随着势垒厚度增大,陡峭界面和缓变界面两种界面态下的带隙计算结果逐渐降低,并且随着厚度增加带隙趋于收敛,而界面势下的带隙计算结果随着势垒厚度的增大而增大,与前两者呈现相反的趋势,这为中红外超晶格器件的精确设计提供了可参考的理论基础。

关键词：锑化物超晶格界面态前后向差分法

Optical and electronic anisotropy of a 2D semiconductor SiP

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Nano Research 2022年第9期15卷 8579-8586页

作者： Shijun Hou Zhengfeng Guo Tao Xiong Xingang Wang Juehan Yang Yue-Yang Liu Zhi-Chuan Niu Shiyuan Liu Bing Liu shenqiang zhai Honggang Gu Zhongming Wei State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100083China State Key Laboratory of Digital Manufacturing Equipment and Technology Huazhong University of Science and TechnologyWuhan 430074China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Joint Laboratory of Advanced Semiconductor Nanjing Guoke Semiconductor CO.Ltd.Nanjing 210008China

Two-dimensional anisotropic materials have been widely concerned by researchers because of their great application potential in the field of polarized detector devices and optical elements,which is a very important and popular research direction at *** a IV-V two-dimensional material,silicon phosphide(SiP)has obvious in-plane anisotropy and exhibits excellent optical and electrical anisotropy ***,the optical anisotropy of SiP is studied by spectrometric ellipsometry measurements and polarization-resolved optical microscopy,and its electrical anisotropy is tested by SiP-based field-effect *** addition,the normal and anisotropic photoelectric performance of SiP is shown by fabricating a photodetector and measuring *** various measurements,SiP exhibits obvious anisotropy and good photoelectric *** work provides basic optical,electrical,and photoelectric performance information of SiP,and lays a foundation for further study of SiP and applications of SiP-based devices.

关键词： two-dimensional materials SiP optical anisotropy electrical anisotropy photoelectronic properties

High powerλ~8.5μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K

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Journal of Semiconductors 2021年第11期42卷 55-60页

作者： Teng Fei shenqiang zhai Jinchuan Zhang Ning Zhuo Junqi Liu Lijun Wang Shuman Liu Zhiwei Jia Kun Li Yongqiang Sun Kai Guo Fengqi Liu Zhanguo Wang Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Robust quantum cascade laser(QCL)enduring high temperature continuous-wave(CW)operation is of critical importance for some *** report on the realization of lattice-matched InGaAs/InAlAs/InP QCL materials grown by metal-organic chemical vapor deposition(MOCVD).High interface quality structures designed for light emission at 8.5μm are achieved by optimizing and precise controlling of growth conditions.A CW output power of 1.04 W at 288 K was obtained from a 4 mm-long and 10μm-wide coated *** maximum wall-plug efficiency and threshold current density were 7.1%and 1.18 kA/cm2,*** device can operate in CW mode up to 408 K with an output power of 160 mW.

关键词： quantum cascade laser metal-organic chemical vapor deposition continuous-wave interface roughness

Room temperature continuous wave operation of quantum cascade laser atλ~9.4μm

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Journal of Semiconductors 2018年第3期39卷 34-37页

作者： Chuncai Hou Yue Zhao Jinchuan Zhang shenqiang zhai Ning Zhuo Junqi Liu Lijun Wang Shuman Liu Fengqi Liu Zhanguo Wang Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049China Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083China

Continuous wave（CW） operation of long wave infrared（LWIR） quantum cascade lasers（QCLs） is achieved up to a temperature of 303 K. For room temperature CW operation, the wafer with 35 stages was processed into buried heterostructure lasers. For a 2-mm-long and 10-μm-wide laser with high-reflectivity（HR） coating on the rear facet, CW output power of 45 m W at 283 K and 9 m W at 303 K is obtained. The lasing wavelength is around 9.4 μm locating in the LWIR spectrum range.

关键词： quantum cascade laser long wave infrared double-phonon resonance

Distributed feedback quantum cascade lasers operating in continuous-wave mode at λ≈7.6μm

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Journal of Semiconductors 2012年第2期33卷 51-53页

作者： Zhang Jinchuan Wang Lijun Liu Wanfeng Liu Fengqi Zhao Lihua zhai shenqiang Liu Junqi Wang Zhanguo Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Department of Electronic Engineering Tsinghua UniversityBeijing 100084China

Distributed feedback（DFB） quantum cascade lasers（QCLs） in continuous-wave（CW） mode emitting atλ≈7.6μm are *** lithography was used to fabricate the first-order distributed feedback grating. For a high-reflectivity-coated QCL with 14.5-μm-wide and 3-mm-long cavity,CW output powers of 300 mW at 85 K and still 10 mW at 270 K are ***-mode emission with a side-mode suppression ratio（SMSR） of about 30 dB and a wide tuning range of ~300 nm in the temperature range from 85 to 280 K is observed.

关键词： quantum cascade laser distributed feedback holographic lithography

Quantum cascade lasers grown by MOCVD

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Journal of Semiconductors 2023年第12期44卷 47-63页

作者： Yongqiang Sun Guangzhou Cui Kai Guo Jinchuan Zhang Ning Zhuo Lijun Wang Shuman Liu Zhiwei Jia Teng Fei Kun Li Junqi Liu Fengqi Liu shenqiang zhai Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsBeijing100083China Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Sharing the advantages of high optical power,high efficiency and design flexibility in a compact size,quantum cascade lasers(QCLs)are excellent mid-to-far infrared laser sources for gas sensing,infrared spectroscopic,medical diagnosis,and defense *** chemical vapor deposition(MOCVD)is an important technology for growing high quality semiconductor materials,and has achieved great success in the semiconductor industry due to its advantages of high efficiency,short maintenance cycles,and high stability and *** utilization of MOCVD for the growth of QCL materials holds a significant meaning for promoting the large batch production and industrial application of QCL *** review summarizes the recent progress of QCLs grown by *** quality and the structure design together determine the device *** progress on the performance improvement of MOCVD-grown QCLs based on the optimization of material quality and active region structure are mainly reviewed.

关键词： quantum cascade lasers continuous wave high optical power metal organic chemical vapor deposition broad gain