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Chalcogenide Ovonic Threshold Switching Selector

Nano-Micro Letters 2024年第5期16卷 1-40页

作者： Zihao Zhao sergiu clima Daniele Garbin Robin Degraeve Geoffrey Pourtois Zhitang Song Min Zhu National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050People’s Republic of China University of Chinese Academy of Sciences Beijing 100029People’s Republic of China IMEC Kapedreef 75LeuvenBelgium

Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or *** Optane,commonly referred to as three-dimensional phase change memory,stands out as one of the most promising *** Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch(OTS).The OTS device,which employs chalcogenide film,has thereby gathered increased attention in recent *** this paper,we begin by providing a brief introduction to the discovery process of the OTS ***,we summarize the key elec-trical parameters of OTS devices and delve into recent explorations of OTS materials,which are categorized as Se-based,Te-based,and S-based material ***,we discuss various models for the OTS switching mechanism,including field-induced nucleation model,as well as several carrier injection ***,we review the progress and innovations in OTS mechanism ***,we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications,such as self-selecting memory and neuromorphic computing.

关键词： Non-volatile memory Ovonic threshold switch(OTS) Chalcogenide Selector

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In silico screening for As/Se-free ovonic threshold switching materials

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npj Computational Materials 2023年第1期9卷 1359-1366页

作者： sergiu clima Daisuke Matsubayashi Taras Ravsher Daniele Garbin Romain Delhougne Gouri Sankar Kar Geoffrey Pourtois imec Kapeldreef 75B-3001 LeuvenBelgium Device Technology Research&Development Center Future Memory Development DepartmentKIOXIA CorporationShin-sugita-cho 8Isogo-kuYokohamaJapan KU Leuven Celestijnenlaan 200DB-3001 LeuvenBelgium

Restricted use of hazardous environmental chemicals is one important challenge that the semiconductor industry needs to face to improve its *** threshold switching(OTS)ternary compound materials used in memory selector devices contain As and *** these elements out of these materials requires significant research *** facilitate this process,we performed systematic material screening for As/Se-free ternary materials,based on ab-initio *** limit the large amount of possible chemical compositions to fewer promising candidates,we used physics-based material parameter filters like material stability,electronic properties,or change in *** OTS gauge concept is introduced as a computed parameter to estimate the probability of a material to show an OTS *** a result,we identified 35 As/Se-free ternary alloy compositions for stand-alone OTS memory applications,as well as 12 compositions for RRAM selector *** work aims seeding the development of As/Se-free OTS materials.

关键词： alloy ternary free

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Voltage-controlled reverse filament growth boosts resistive switching memory

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Nano Research 2018年第8期11卷 4017-4025页

作者： Attilio Belmonte Umberto Celano Zhe Chen Janaki Radhaskrishnan' Augusto Redolfi sergiu clima Olivier Richard Hugo Bender Gouri Sankar Kar Wilfried Vandervorst Ludovic Goux IMEC Kapeldreef 75 B-3001 Heverlee (Leuven) Belgium Institute of Microelectronics Peking University Beijing 100871 China Department of Physics and Astronomy KU Leuven Celestijnenlaan2OOD 3001 Leuven Belgium Attilio Belmonte and Umberto Celano contributed equally to this work.

Nonvolatile memory devices based on filamentary resistance switching （KS） are among the frontrunners to fuel future devices and sensors of the internet of things （IoT） era. The capability of many two distinctive resistive states in response to an external electrical stimulus has been demonstrated. Through years of selection, cells based on the drift of metal ions, namely conductive-bridge memory devices, have shown a wide range of applications with nanosecond switching speeds, nanometer scalability, high-density, and low power-consumption. However, for low （sub-10-~A） current operation, a critical challenge is still represented by programming variability and by the stability of the conductive filament over time. Here, by introducing the concept of reverse filament growth （RFG）, we managed to control the structural reconfiguration of the conductive filament inside a memory cell with significant enhancements of each of the aforementioned properties. A first-in-class Cu-based switching device is demonstrated, with a dedicated stack that enabled us to systematically trigger RFG, thus tuning the device＇s properties. Along with nanosecond switching speeds, we achieved an endurance of up to 106 cycles with a 102 read window, with outstanding disturb immunity and optimal stability of the filament over time. Furthermore, by tuning the filament＇s shape, an excellent control of multi-level bit operations was achieved. Thus, this device offers high flexibility in memory applications.

关键词： filamentary resistiveswitching conductive bridge randomaccess memory (CBRA)VO conductive bridge negative set reverse filament growth

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