The influence of electron radiation on the properties of semiconducting silicon single crystals (Si)—both n- and p-types (currently one of the most widely applied material in the electronic technology) was studied un...
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The influence of electron radiation on the properties of semiconducting silicon single crystals (Si)—both n- and p-types (currently one of the most widely applied material in the electronic technology) was studied under the electron irradiation process in-situ in air (in common conditions). Higher value of electro-conductivity (σ) during the irradiation process with respect to after irradiation was observed, which was explained by ionization and capture mechanisms resulting in the formation of non-equilibrium carriers (hole-electron pairs). The k.netics of radiation defects generation, their physical nature, temperature stability and relaxation are examined. Structural radiation defects formation: point and complexes, their influence on the silicon conductivity are considered.
The influence of hydrochloric or sulphuric acid treatment on the electro-physical properties of superthin basalt fiber (STBF) made from Armenian basalt rock. was studied. Specific electric resistance for direct and al...
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The influence of hydrochloric or sulphuric acid treatment on the electro-physical properties of superthin basalt fiber (STBF) made from Armenian basalt rock. was studied. Specific electric resistance for direct and alternating currents, dielectric parameters of ε, and ε,, were measured. It is shown that specific resistance and dielectric parameters of super-thin basalt fiber change essentially after hydrochloric or sulphuric acid treatment. The temperature dependences of these parameters were studied, too, and their non–monotonic behavior was observed. The probable variation of mentioned STBF parameters is explained by different water absorption capacity of pores as a result of acid treatment.
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