检索结果-南通市图书馆

Top gate engineering of field-effect transistors based on wafer-scale two-dimensional semiconductors

Journal of Materials Science & Technology 2022年第11期106卷 243-248页

作者： Jingyi Ma Xinyu Chen Yaochen Sheng Ling Tong Xiaojiao Guo Minxing Zhang Chen Luo Lingyi Zong Yin Xia Chuming Sheng Yin Wang saifei gou Xinyu Wang Xing Wu Peng Zhou David Wei Zhang Chenjian Wu Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai200433China In Situ Devices Center Shanghai Key Laboratory of Multidimensional Information ProcessingEast China Normal UniversityShanghai 200241China School of Electronic Information Soochow UniversitySuzhou215006China

The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic ***,incompatible electrical properties and inappropriate logic levels remain enormous *** this work,a doping-free strategy is investigated by top gated(TG)MoS_(2) field-effect transistors(FETs)using various metal gates(Au,Cu,Ag,and Al).These metals with different work functions provide a convenient tuning knob for controlling threshold voltage(V_(th))for MoS_(2) *** instance,the Al electrode can create an extra electron doping(n-doping)behavior in the MoS_(2) TG-FETs due to a dipole effect at the gate-dielectric *** this work,by achieving matched electrical properties for the load transistor and the driver transistor in an inverter circuit,we successfully demonstrate wafer-scale MoS_(2) inverter arrays with an optimized inverter switching threshold voltage(V_(M))of 1.5 V and a DC voltage gain of 27 at a supply voltage(V_(DD))of 3 *** work offers a novel scheme for the fabrication of fully integrated multistage logic circuits based on wafer-scale MoS_(2) film.

关键词： Two-dimensional semiconductor MoS_(2) Top gate Field effect transistor Logic inverter

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Contact optimisation strategy for wafer-scale field-effect transistors based on two-dimensional semiconductors

引用

Journal of Materials Science & Technology 2023年第2期133卷 230-237页

作者： Ling Tong Xiaojiao Guo Zhangfeng Shen Lihui Zhou Jingyi Ma Xinyu Chen Honglei Chen Yin Xia Chuming Sheng saifei gou Die Wang Xinyu Wang Xiangqi Dong Yuxuan Zhu Xinzhi Zhang David Wei Zhang Sheng Dai Xi Li Peng Zhou Yangang Wang Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China College of Biological Chemical Science and EngineeringJiaxing UniversityJiaxing 314001China Key Laboratory for Advanced Materials and Feringa Nobel Prize Scientist Joint Research Center Institute of Fine ChemicalsSchool of Chemistry&Molecular EngineeringEast China University of Science and TechnologyShanghai 200237China State Key Laboratory of Surface Physics and Department of Physics Fudan UniversityShanghai 200433China

Two-dimensional(2D)semiconductors can be utilized to continually miniaturize nanoscale electronic ***,achieving a practical solution for satisfying electrical contact with 2D semiconductors remains *** this study,we developed a novel contact structure with transferred multilayer(t-ML)MoS 2 by integrating both edge and top *** in-situ plasma treatment for the edge of the MoS 2 channel and successive metal deposition,we achieved 16 times lower contact resistivity(22.8 kΩμm)than that of the top contacted *** thickness-dependent electrical measurement indicates that edge contact is highly effective with thick MoS 2 due to the alleviated current-crowding effect re-sulting from the small contact *** temperature-dependent transport measurement further confirms the effective minimization of the influence from the Schottky barrier and tunnelling ***,the simplified resistor network model and energy-band diagram were proposed to understand the carrier transport *** work provides a practical strategy for achieving excellent electrical contact between bulk metals and 2D semiconductors,paving the way for future large-scale 2D electronic devices.

关键词： Edge contact 2D materials Field-effect transistors Schottky barrier Contact resistance

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

2T1C DRAM based on semiconducting MoS_(2) and semimetallic graphene for in-memory computing

引用

National Science Open 2023年第4期2卷 65-75页

作者： saifei gou Yin Wang Xiangqi Dong Zihan Xu Xinyu Wang Qicheng Sun Yufeng Xie Peng Zhou Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityZhangjiang Fudan International Innovation CenterShanghai 200433China Shenzhen Six Carbon Technology Shenzhen 518055China

In-memory computing is an alternative method to effectively accelerate the massive data-computing tasks of artificial intelligence(AI)and break the memory *** this work,we propose a 2T1C DRAM structure for in-memory *** integrates a monolayer graphene transistor,a monolayer MoS_(2)transistor,and a capacitor in a two-transistor-onecapacitor(2T1C)*** this structure,the storage node is in a similar position to that of one-transistor-one-capacitor(1T1C)dynamic random-access memory(DRAM),while an additional graphene transistor is used to accomplish the nondestructive readout of the stored ***,the ultralow leakage current of the MoS_(2)transistor enables the storage of multi-level voltages on the capacitor with a long retention *** stored charges can effectually tune the channel conductance of the graphene transistor due to its excellent linearity so that linear analog multiplication can be *** of the almost unlimited cycling endurance of DRAM,our 2T1C DRAM has great potential for in situ training and recognition,which can significantly improve the recognition accuracy of neural networks.

关键词： molybdenum disulfide(MoS_(2)) graphene DRAM in-memory computing

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Stacking monolayers at will:A scalable device optimization strategy for two-dimensional semiconductors

引用

Nano Research 2022年第7期15卷 6620-6627页

作者： Xiaojiao Guo Honglei Chen Jihong Bian Fuyou Liao Jingyi Ma Simeng Zhang Xinzhi Zhang Junqiang Zhu Chen Luo Zijian Zhang Lingyi Zong Yin Xia Chuming Sheng Zihan Xu saifei gou Xinyu Wang Peng Gong Liwei Liu Xixi Jiang Zhenghua An Chunxiao Cong Zhijun Qiu Xing Wu Peng Zhou Xinyu Chen Ling Tong Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsZhangjiang Fudan International Innovation CenterFudan UniversityShanghai 200433China The Hong Kong Polytechnic University Shenzhen Research Institute Shenzhen 518057China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum Computing and Key Laboratory of MicroFudan UniversityShanghai 200433China State Key Laboratory of ASIC and System School of Information Science and EngineeringFudan UniversityShanghai 200433China Shanghai Key Laboratory of Multidimensional Information Processing Department of Electronic Engineering East China Normal UniversityShanghai 200241China Shenzhen Six Carbon Technology Shenzhen 518055China Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials Fudan UniversityShanghai 200433China

In comparison to monolayer(1L),multilayer(ML)two-dimensional(2D)semiconducting transition metal dichalcogenides(TMDs)exhibit more application potential for electronic and optoelectronic devices due to their improved current carrying capability,higher mobility,and broader spectral ***,the investigation of devices based on wafer-scale ML-TMDs is still restricted by the synthesis of uniform and high-quality ML *** this work,we propose a strategy of stacking MoS_(2) monolayers via a vacuum transfer method,by which one could obtain wafer-scale high-quality MoS_(2) films with the desired number of layers at *** optical characteristics of these stacked ML-MoS_(2) films(>2L)indicate a weak interlayer *** stacked MLMoS_(2) phototransistors show improved optoelectrical performances and a broader spectral response(approximately 300-1,000 nm)than that of 1L-MoS_(2).Additionally,the dual-gate ML-MoS_(2) transistors enable enhanced electrostatic control over the stacked ML-MoS_(2) channel,and the 3L and 4L thicknesses exhibit the optimal device performances according to the turning point of the current on/off ratio and the subthreshold swing.

关键词： two-dimensional semiconductor field-effect transistors chemical vapor deposition(CVD)synthesis interlayer coupling vacuum transfer method dual-gate transistor

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：