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Displacement Talbot lithography for nanoengineering of III-nitride materials

Microsystems & Nanoengineering 2019年第1期5卷 38-49页

作者： Pierre-Marie Coulon Benjamin Damilano Blandine Alloing Pierre Chausse Sebastian Walde Johannes Enslin Robert Armstrong Stephane Vezian sylvia hagedorn Tim Wernicke Jean Massies Jesus Zuniga‐Perez Markus Weyers Michael Kneissl Philip A.Shields Department of Electrical&Electronic Engineering University of BathBath BA27AYUK Universite Cote d’Azur CNRSCRHEArue B.Gregory06560 ValbonneFrance Ferdinand-Braun-Institut Leibniz-Institut fur HochstfrequenztechnikGustav-Kirchhoff-Str.412489 BerlinGermany Technische Universität Berlin Institute of Solid State Physics10623 BerlinGermany

Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties,enabling novel functionalities and *** a variety of lithography techniques are currently employed to nanoengineer these materials,the scalability and cost of the fabrication process can be an obstacle for large-scale *** this paper,we report on the use of a fast,robust and flexible emerging patterning technique called Displacement Talbot lithography(DTL),to successfully nano-engineer III-nitride ***,along with its novel and unique combination with a lateral planar displacement(D^(2)TL),allow the fabrication of a variety of periodic nanopatterns with a broad range of filling factors such as nanoholes,nanodots,nanorings and nanolines;all these features being achievable from one single *** illustrate the enormous possibilities opened by DTL/D2TL,dielectric and metal masks with a number of nanopatterns have been generated,allowing for the selective area growth of InGaN/GaN core-shell nanorods,the top-down plasma etching of III-nitride nanostructures,the top-down sublimation of GaN nanostructures,the hybrid top-down/bottom-up growth of AlN nanorods and GaN nanotubes,and the fabrication of nanopatterned sapphire substrates for AlN *** with their planar counterparts,these 3D nanostructures enable the reduction or filtering of structural defects and/or the enhancement of the light extraction,therefore improving the efficiency of the final *** results,achieved on a wafer scale via DTL and upscalable to larger surfaces,have the potential to unlock the manufacturing of nano-engineered III-nitride materials.

关键词： Talbot planar nitride

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Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire

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Photonics Research 2020年第4期8卷 589-594页

作者： NORMAN SUSILO EVIATHAR ZIFFER sylvia hagedorn LEONARDO CANCELLARA CARSTEN NETZEL NEYSHA LOBO PLOCH SHAOJUN WU JENS RASS SEBASTIAN WALDE LUCA SULMONI MARTIN GUTTMANN TIM WERNICKE MARTIN ALBRECHT MARKUS WEYERS MICHAEL KNEISSL Institute of Solid State Physics Technische Universitat BerlinHardenbergstraβe 3610623 BerlinGermany Ferdinand-Braun-Institut Leibniz-Institut für HochstfrequenztechnikGustav-Kirchhoff-Strafβe 412489 BerlinGermany Leibniz-Institut für Kristallzüchtung Max-Born-Strafβe 212489 BerlinGermany

We report on the performance of AlGaN-based deep ultraviolet light-emitting diodes(UV-LEDs)emitting at 265 nm grown on stripe-patterned high-temperature annealed(HTA)epitaxially laterally overgrown(ELO)aluminium nitride(AIN)/sapphire *** this purpose,the structural and electro-optical properties of ultraviolet-c light-emitting diodes(UVC-LEDs)on as-grown and on HTA planar AlN/sapphire as well as ELO AlN/sapphire with and without HTA are investigated and *** measurements reveal dark spot densities of 3.5×10^9 cm^-2,1.1×10^9 cm^-2,1.4×10^9 cm^-2,and 0.9×10^9 cm^-2 in multiple quantum well samples on as-grown planar AIN/sapphire,HTA planar AlN/sapphire,ELO AlN/sapphire,and HTA ELO AlN/sapphire,respectively,and are consistent with the threading dislocation densities determined by transmission electron microscopy(TEM)and high-resolution X-ray diffraction rocking *** UVC-LED performance improves with the reduction of the threading dislocation densities(TDDs).The output powers(measured on-wafer in cw operation at 20 mA)of the UV-LEDs emitting at 265 nm were 0.03 mW(planar AlN/sapphire),0.8 mW(planar HTA AlN/sapphire),0.9 mW(ELO AlN/sapphire),and 1.1 mW(HTA ELO AlN/sapphire),***,Monte Carlo ray-tracing simulations showed a 15%increase in light-extraction efficiency due to the voids formed in the ELO *** results demonstrate that HTA ELO AlN/sapphire templates provide a viable approach to increase the efficiency of UV-LEDs,improving both the internal quantum efficiency and the light-extraction efficiency.

关键词： Improved performance UVC-LEDs combination high-temperature annealing epitaxially laterally overgrown AlN/sapphire AlN UVC

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