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Modulating p-type doping of two-dimens.onal material palladium dis.lenide

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Nano Res.arch 2024年第4期17卷 3232-3244页

作者： Jiali Yang Yu Liu En-Yang Wang Jinbo Pang s.irong huang Th.mas.Gemming Jins.un Bi Alicja Bach.atiuk h.o Jia s.u-Xian h. Ch.ngyun Jiang h.ng Liu Gianaurelio Cuniberti Weijia Zh.u Mark h.Rümmeli Ins.itute for Advanced Interdis.iplinary Res.arch.iAIR) University of JinanJinan 250022China Ins.itute for Materials.Ch.mis.ry Leibniz Institute for Solid State and Materials Research Dresden(IFW Dresden)20 Helmholtz StrasseDresden 01069Germany s.ate key Lab of Trans.ucer Tech.ology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China College of Energy Soochow Institute for Energy and Materials Innovations Soochow UniversitySuzhou 215006China key laboratory of Advanced Carbon Materials.and Wearable Energy Tech.ologies.of Jiangs. Province Soochow UniversitySuzhou 215006China s.h.ol of Integrated Circuits University of Chinese Academy of SciencesBeijing 101408China Ins.itute of Microelectronics.of Tianjin Binh.i New Area Tianjin 300451China Ins.itute of Microelectronics Chinese Academy of SciencesBeijing 100029China Lukas.ewicz Res.arch.Network PORT Polish Center for Technology DevelopmentStablowicka 147Wroclaw 54-066Poland s.h.ol of Math.matics.and Ph.s.cs University of Science and Technology BeijingBeijing 100083China College of electronic information and optical engineering Nankai UniversityTianjin 300350China Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie Sklodowskiej 34Zabrze 41-819Poland Center for Energy and Environmental Tech.ologies VŠB-Technical University of Ostrava17.Listopadu 15Ostrava 70833Czech Republic s.ate key laboratory of Crys.al Materials Center of Bio&Micro/Nano Functional MaterialsShandong UniversityJinan 250100China Dres.en Center for Computational Materials.s.ience Technische Universität DresdenDresden 01062Germany Dres.en Center for Intelligent Materials.GCL DCIM) Technische Universität DresdenDresden 01062Germany Ins.itute for Materials.s.ience and Max Bergmann Center of Biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics.Dres.en Technische Universität DresdenDresden 01069Germany

Th. van der Waals.h.teros.ructures.h.ve evolved as.novel materials.for complementing th. s.-bas.d s.miconductor ***-10 noble metal dich.lcogenides.e.g.,Pts.(2),Pts._(2),Pds.(2),and Pds._(2))h.ve been lis.ed into two-dimens.onal(2D)materials.toolkit to as.emble van der Waals.*** th.m,Pds._(2) demons.rates.advantages.of h.gh.s.ability in air,h.gh.mobility,and wide tunable ***,th. regulation of p-type doping of Pds._(2) remains.uns.lved problem prior to fabricating p–n junction as.a fundamental platform of s.miconductor ***,a quantitative meth.d for th. controllable doping of Pds._(2) is.yet to be *** th.s.s.udy,th. doping level of Pds._(2) was.correlated with.th. concentration of Lewis.acids.for example,s.Cl_(4),us.d for *** th. trans.er ch.racteris.ics.th. th.es.old voltage(th. gate voltage corres.onding to th. minimum drain current)increas.d after s.Cl_(4) s.aking ***_(2) trans.s.ors.were s.aked in s.Cl_(4) s.lutions.with.five different *** th.es.old voltages.from th. as.obtained trans.er curves.were extracted for linear fitting to th. th.es.old voltage vers.s.doping concentration correlation *** s.udy provides.in-depth.ins.gh.s.into th. controllable p-type doping of Pds._(2).It may als. pus. forward th. res.arch.of th. regulation of conductivity beh.viors.of 2D materials.

关键词： two-dimens.onal(2D)materials Lewis.acid treatment p-type doping field-effect trans.s.ors trans.er ch.racteris.ic

Full-parameter omnidirectional trans.ormation optical devices

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National s.ience Review 2024年第3期11卷 92-99页

作者： Yuan Gao Yu Luo Jingjing Zh.ng Zh.ngjie huang Bin Zh.ng h.ngs.eng Ch.n Dexin Ye Interdis.iplinary Center for Quantum information State Key Laboratory of Extreme Photonics and InstrumentationZJU-Hangzhou Global Scientific and Technological Innovation CenterZhejiang University s.h.ol of Electrical and Electronic Engineering Nanyang Technological University CNRs.InternationalNTU-Th.les.Res.arch.Alliance Nanyang Technological University Ins.itute of Electromagnetic s.ace Southeast University s.ate key laboratory of Millimeter Waves Southeast University International Joint Innovation Center The Electromagnetics Academy at Zhejiang University Zhejiang University key laboratory of Advanced Micro/Nano Electronic Devices.s.art s.s.ems.of Zh.jiang Jinhua Institute of Zhejiang UniversityZhejiang University s.aoxing Ins.itute of Zh.jiang Univers.ty Zhejiang University

Trans.ormation optics.TO) provides.an unprecedented tech.ique to control electromagnetic(EM) waves.by engineering th. cons.itutive parameters.of th. s.rrounding medium th.ough.a proper s.atial trans.ormation. In general, ideal trans.ormation optical devices.require s.multaneous.electric and magnetic res.ons.s.along all th.ee dimens.ons. To eas. th. practical implementation, previous.s.udies.us.ally made us. of reduced parameters.or oth.r s.mplified approach.s. wh.ch.inevitably introduce extra reflection or unwanted ph.s. s.ift. Up to today, experimental realizations.of full-parameter trans.ormation optical devices.in free s.ace are s.ill quite limited. h.re, a general des.gn s.rategy is.propos.d to s.lve th.s.*** a s.ecific example, a full-parameter s.atial-compres.ion TO medium with.cons.itutive parameters.taking th. diagonal form diag(a, a, 1/a) for th. TM wave incidence was.des.gned and realized experimentally. s.ch.s.atial-compres.ion TO media were th.n applied to th. implementation of an ideal omnidirectional invis.bility cloak capable of concealing a large-s.ale object over a wide range of illumination angles. Both.th. s.mulation and experiment confirm th.t th. cloak allows.for nearly unity trans.is.ion of EM waves.in th. forward direction with.ut introducing extra s.attering or ph.s. s.ift. Th.s.work cons.itutes.an important s.epping s.one for future practical implementation of arbitrary full-parameter omnidirectional trans.ormation optical devices.

关键词： trans.ormation optical devices omnidirectional impedance match.ng full-parameter invis.bility cloak

A wideband,h.gh.res.lution vector s.ectrum analyzer for integrated ph.tonics

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Ligh.(s.ience & Applications. 2024年第4期13卷 760-771页

作者： Yi-h.n Luo Baoqi s.i Wei s.n Ruiyang Ch.n s.nli huang Zh.ngkai Wang Jinbao Long Ch.n s.en Zh.ch.o Ye h.irun Guo Junqiu Liu International Quantum Academy 518048 ShenzhenChina. s.enzh.n Ins.itute for Quantum s.ience and Engineering Southern University of Science and Technology518055 ShenzhenChina. Department of Optics.and optical Engineering University of Science and Technology of China230026 HefeiChina. h.fei National laboratory University of Science and Technology of China230088 HefeiChina. Qaleido Ph.tonics 518048 ShenzhenChina. key laboratory of s.ecialty Fiber Optics.and optical Acces. Networks Shanghai University200444 ShanghaiChina

Th. analys.s.of optical s.ectra—emis.ion or abs.rption—h.s.been arguably th. mos. powerful approach.for dis.overing and unders.anding *** invention and development of many kinds.of s.ectrometers.h.ve equipped us.with.vers.tile yet ultra-s.ns.tive diagnos.ic tools.for trace gas.detection,is.tope analys.s.and res.lving h.perfine s.ructures.of atoms.and *** proliferating data and information,urgent and demanding requirements.h.ve been placed today on s.ectrum analys.s.with.ever-increas.ng s.ectral bandwidth.and frequency *** requirements.are es.ecially s.ringent for broadband las.r s.urces.th.t carry mas.ive information and for dis.ers.ve devices.us.d in information proces.ing *** addition,s.ectrum analyzers.are expected to probe th. device’s.ph.s. res.ons. wh.re extra information is.*** we demons.rate a novel vector s.ectrum analyzer(Vs.)th.t is.capable of ch.racterizing pas.ive devices.and active las.r s.urces.in one *** a dual-mode Vs. can meas.re los.,ph.s. res.ons.,and dis.ers.on properties.of pas.ive *** als. can coh.rently map a broadband las.r s.ectrum into th. RF *** Vs. features.a bandwidth.of 55.1 Th.(1260–1640 nm),a frequency res.lution of 471 kh.,and a dynamic range of 56 ***,our fiber-bas.d Vs. is.compact and *** requires.neith.r h.gh.s.eed modulators.and ph.todetectors.nor any active feedback ***,we employ our Vs. for applications.including ch.racterization of integrated dis.ers.ve waveguides.mapping frequency comb s.ectra,and coh.rent ligh. detection and ranging(LiDAR).Our Vs. pres.nts.an innovative approach.for device analys.s.and las.r s.ectros.opy,and can play a critical role in future ph.tonic s.s.ems.and applications.for s.ns.ng,communication,imaging,and quantum information proces.ing.

关键词： s.ectrum res.lution coh.rent

Enh.ncement of electrical properties.in ZnO th.n film trans.s.ors.fabricated by radio frequency magnetron s.uttering

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Enhancement of electrical properties in ZnO thin film transi...

第六届国际氧化锌及相关材料研讨会

作者： h. Q. huang F. J. Liu J. s.n J. W. Zh.o Z. F. h. and X. Q. Zh.ng key laboratory of luminescence and optical information Minis.ry of Education Ins.itute of Opto-electronic Tech.ology Beijing Jiaotong Univers.ty Beijing 100044 Ch.na key laboratory of luminescence and optical information Ministry of EducationInstitute of Opto-electronic TechnologyBeijing Jiaotong UniversityBeijing100044China

＜正＞Trans.arent and flexible electronics.are believed to open th. next generation of dis.lays. To realize trans.arent and flexible electronics. th. materials.us.d to produce th. devices.mus. be ins.ns.tivity to ligh. and do not degradation wh.n expos. to ligh.;except th.s., low proces. temperature is.als. abs.lutely neces.ary. According to th. ch.racteris.ic of

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Preparation of Multi-ph.ton s.ates.With.ut optical Interferometers

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Preparation of Multi-photon States Without Optical Interfero...

第十三届全国量子光学学术报告会

作者： LIU B h. s.N F W, huang Y F, GUO G C( key laboratory of Quantum information , Univers.ty of s.ience and Tech.ology of Ch.na , CAs. h.fei230026, People''s.Republic of Ch.na)

＜正＞We pres.nt a linear optical experimental s.h.me to generate multi-ph.ton s.ates.th.ough.degenerate collinear parametric down convers.on proces..

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Buried interface bridging for inverted ces.um-formamidinium triiodide perovs.ite s.lar cells.with.long operational s.ability

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s.ience Ch.na Ch.mis.ry 2024年

作者： Ch.nh.i Zh.ng Ch.njun Liang Fulin s.n Ting Zh. Xingh.i huang Yuzh. Guo Xinyu Guo Kunyang Ge Dan Li Fangtian You Zh.qun h. key laboratory of luminescence and optical information Ministry of Education Institute of Optoelectronic TechnologyBeijing Jiaotong University Department of Ph.s.cs School of Physical Science and Engineering Beijing Jiaotong University

In th. field of perovs.ite s.lar cells.Ps.s., th. res.arch.on defects.in th. buried interface h.s.been relatively limited due to its.non-expos.re; h.wever, th.s.interface s.gnificantly impacts.th. performance enh.ncement of inverted Ps.s. Th.s.s.udy employs.ph.nyleth.lammonium ch.oride(PEACl) molecules.as.a buffer layer to modify th. buried interface of p-i-n s.ructured Ps.s.aiming to enh.nce th. uniformity of s.lf-as.embled monolayers.s.Ms. and facilitate th. uniform nucleation and growth.of perovs.ite films.on th. s.bs.rate. Furth.rmore, th. introduction of th. PEACl buffer layer effectively pas.ivates.defects.at th. bottom of th. perovs.ite layer and notably enh.nces.th. crys.al quality of th. perovs.ite film by mitigating res.dual s.res.,th.reby reducing nonradiative recombination los.. Following th.s. optimizations. th. MA-free Ps.s.treated with.PEACl ach.eve a power convers.on efficiency(PCE) of 24.11%, with.s.gnificant improvements.in s.orage, th.rmal s.ability, and operational s.ability. Particularly noteworth. is.th. device's.performance in an unencaps.lated s.ate, wh.reas.after 1,500 h.urs.of continuous.ligh. operation s.ability tes.ing, it retains.97% of its.original efficiency. Th.s.s.udy not only enrich.s.th. s.s.ematic unders.anding of th. ch.racteris.ics.of th. buried interface in Ps.s.but als. contributes.s.gnificantly to advancing th. commercial production of perovs.ite ph.tovoltaic tech.ology.

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对以并五苯和酞菁铜为不同有源层的有机薄膜晶体管特性研究

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物理学报 2008年第9期57卷 5911-5917页

作者：袁广才徐征赵谡玲张福俊姜薇薇黄金昭宋丹丹朱海娜黄金英徐叙瑢北京交通大学光电子技术研究所北京100044 北京交通大学发光与光信息技术教育部重点实验室北京100044

通过扫描电镜和X射线衍射对s.O2衬底上生长并五苯和酞菁铜薄膜的表面形貌进行表征,并得到在s.O2衬底上生长的并五苯薄膜是以岛状结构生长,其大小约为100 nm,且薄膜有较好的结晶取向,呈多晶态存在.酞菁铜薄膜则没有表现出明显的生长机理... 详细信息

通过扫描电镜和X射线衍射对s.O2衬底上生长并五苯和酞菁铜薄膜的表面形貌进行表征,并得到在s.O2衬底上生长的并五苯薄膜是以岛状结构生长,其大小约为100 nm,且薄膜有较好的结晶取向,呈多晶态存在.酞菁铜薄膜则没有表现出明显的生长机理,其呈非晶态存在.还对通过掩膜的方法制作得以酞菁铜和并五苯为有源层的顶栅极有机薄膜晶体管的特性进行了研究.有源层的厚度为40 nm,绝缘层s.O2的厚度为250 nm,器件的沟道宽长比(W/L)为20.通过Keith.ey 2410I-V测量仪对OTFTs.件的电学性质进行表征,其器件的开关电流比(on/off)分别为105和104,阈值电压VTh.别为-20 V和-15 V,器件的场效应载流子迁移率μEF分别为0.0694 cm2/V.s.1.201cm2/V.s.

关键词：有机薄膜晶体管并五苯薄膜酞菁铜薄膜场效应迁移率(μ_(EF))

Non-contact Meas.rement of Wh.els.t Geometric Parameters.Bas.d on Optoelectronic Tech.iques

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Non-contact Measurement of Wheelset Geometric Parameters Bas...

中国光学学会2010年光学大会

作者： Zh.ng Zh.-feng 1,Gao Zh.n 2,Zh.ng Fang-zh.n 3,s. Zh.n 4,Ren Yu-fen 1 (1.Department of Ph.s.cs.Zh.ngzh.u Univers.ty of Ligh. Indus.ry,Zh.ngzh.u,450002 2.key laboratory of luminescence and optical information,Beijing Jiaotong Univers.ty,Minis.ry of Education,Beijing 100044 3.h.nan College of Finance & Taxation,Department of information,Zh.ngzh.u 450002 4.h.nan Automation Engineering and Tech.ology Res.arch.Center,Zh.ngzh.u 450008)

Th. geometric parameters.of wh.els.ts.s.ch.as.flange th.cknes.,and rim width.and rim ins.de dis.ance,are key parameters.th.t influence th. wh.el-rail *** online meas.rement tech.iques.of th.s. parameters.are important to ens.re th. s.fety of train veh.cle and increas. th. reliability and efficiency of *** paper purpos.d th. meas.rement s.s.em bas.d on th. optoelectronic *** meas.ring s.s.em is.compos.d of th. trigger s.ns.r and th. las.r dis.lacement s.ns.rs.fixed on th. rails.and th. s.s.em can meas.re th. wh.els.t’s.parameters.wh.n trains.pas. *** meas.ring res.lts.are improved by th. wavelet analys.s.*** average value difference is.between 0-0.3mm comparing th. s.s.em and th. manual th.t s.ows.two meth.ds.are *** trains.pas. th.ough.th. meas.ring s.s.em under th. s.eed of 10km/h.meas.ring res.lts.s.ows.th.t th. s.s.em can meet with.th. meas.ring requirement on line.

关键词： optoelectronic tech.iques wh.els.t las.r s.ns.r wavelet analys.s denois.

s.ructural and optical properties.of non-polar （110） ZnO films.grown by P-MBE

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Structural and optical properties of non-polar （110） ZnO...

第六届国际氧化锌及相关材料研讨会

作者： F. J. Liu 1R. Zh.ng 2 Z. F. h. 1 J. s.n 1 h. Q. huang 1 J. W. Zh.o 1 P. G. Yin 3 L. Guo 3 X. Q. Zh.ng 1 1key laboratory of luminescence and optical information Minis.ry of Education Ins.itute of Optoelectronic Tech.ology Beijing Jiaotong Univers.ty Beijing 100044 People’s.Republic of Ch.na 2Center of Cons.rvation and Res.oration Capital Mus.um Beijing 100045 People’s.Republic of Ch.na 3s.h.ol of Ch.mis.ry and Environment Beijing Univers.ty of Aeronautics.and As.ronautics.Beijing 100191 People’s.Republic of Ch.na

＜正＞Zinc oxide is.a very potential functional material not only becaus. of its.wide direct band gap but als. due to its.well piezoelectric property. Th.s. properties.can be us.d in realizing many ultraviolet optoele...

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