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Homojunction structure amorphous oxide thin film transistors with ultra-high mobility

Journal of Semiconductors 2023年第5期44卷 19-26页

作者： rongkai lu Siqin Li Jianguo lu Bojing lu Ruqi Yang Yangdan lu Wenyi Shao Yi Zhao Liping Zhu Fei Zhuge Zhizhen Ye State Key Laboratory of Silicon Materials Key Laboratory for Biomedical Engineering of Ministry of EducationSchool of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials Institute of WenzhouZhejiang UniversityWenzhou 325006China Department of Electronic Science and Technology College of Information Science and Electronic EngineeringZhejiang UniversityHangzhou 310027China Ningbo Institute of Materials Technology and Engineering Chinese Academy of SciencesNingbo 315201China

Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/*** are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect *** research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.

关键词： thin film transistors homojunction carrier mobility amorphous oxides

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Prof. Chen Yiyu Visited France and Germany

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Science Foundation in China 2004年第1期12卷 8-9页

作者： (lu rongkai, Fan Yingjie)

Prof. Chen Yiyu, President of NSFC, paid a successful visit to France and Germany from July 12 to 23, 2004.

关键词：中国 ChenYiyu 教授法国德车国际访问自然科学基金委员会国际交流

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Prof. Chen Yiyu Visited France and Germany

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Science Foundation in China 2004年第Z1期 10-11页

作者： (lu rongkai, Fan Yingjie)

Prof. Chen Yiyu, President of NSFC, paid a successful visit to France and Germany from July 12 to 23,*** his visit in France, Prof. Chen visited the French Research Institute for Exploitation of the Sea (IFREMER), the French National Center for Scientific Research (CNRS), the French National Institute for Agricultural Research (INRA), the Institut Pasteur and the High Normal School (ENS). Both sides have presented the latest de

关键词： Chen Yiyu Visited France and Germany Prof DFG CNRS

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Room-Temperature Processed Amorphous ZnRhCuO Thin Films with p-Type Transistor and Gas-Sensor Behaviors

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Chinese Physics Letters 2020年第9期37卷 108-111页

作者：陆波静刘如敏李思嵚吕容恺陈凌翔叶志镇吕建国 State Key Laboratory of Silicon Materials School of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China Key Laboratory for Biomedical Engineering of Ministry of Education College of Biomedical Engineering and Instrument ScienceZhejiang UniversityHangzhou 310027China

We examine an amorphous oxide semiconductor(AOS)of *** a-ZnRhCuO films are deposited at room temperature,having a high amorphous quality with smooth surface,uniform thickness and evenly distributed elements,as well as a high visible transmittance above 87%with a wide bandgap of 3.12 *** a-ZnRhCuO films as active layers,thin-film transistors(TFTs)and gas sensors are *** TFT behaviors demonstrate the p-type nature of a-ZnRhCuO channel,with an on-to-off current ratio of^1×10^3 and field-effect mobility of0.079 cm^2 V^-1s^-*** behaviors of gas sensors also prove that the a-ZnRhCuO films are of p-type *** achievements relating to p-type a-ZnRhCuO films at room temperature with TFT devices may pave the way to practical applications of AOSs in transparent flexible electronics.

关键词： amorphous transparent films

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