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Floating-gate based PN blending optoelectronic synaptic transistor for neural machine translation

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Science China Materials 2022年第5期65卷 1383-1390页

作者： Xianghong Zhang Enlong Li rengjian yu Lihua He Weijie yu Huipeng Chen Tailiang Guo Institute of Optoelectronic Display National&Local United Engineering Lab of Flat Panel Display TechnologyFuzhou UniversityFuzhou 350002China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350100China

Neural machine translation, which has an encoder-decoder framework, is considered to be a feasible way for future machine translation. Nevertheless, with the fusion of multiple languages and the continuous emergence of new words, most current neural machine translation systems based on von Neumann’s architecture have seen a substantial increase in the number of devices for the decoder, resulting in high-energy consumption rate. Here, a multilevel photosensitive blending semiconductor optoelectronic synaptic transistor(MOST) with two different trapping mechanisms is firstly demonstrated, which exhibits 8 stable and well distinguishable states and synaptic behaviors such as excitatory postsynaptic current, short-term memory, and long-term memory are successfully mimicked under illumination in the wavelength range of 480–800 nm. More importantly, an optical decoder model based on MOST is successfully fabricated,which is the first application of neuromorphic device in the field of neural machine translation, significantly simplifying the structure of traditional neural machine translation ***, as a multi-level synaptic device, MOST can further reduce the number of components and simplify the structure of the codec model under light illumination. This work first applies the neuromorphic device to neural machine translation, and proposes a multi-level synaptic transistor as the based cell of decoding module, which would lay the foundation for breaking the bottleneck of machine translation.

关键词： optoelectronic transistor synaptic transistor synaptic plasticity modulation neural machine translation decoder

High-performance n-type thin-film transistor based on bilayer MXene/semiconductor with enhanced electrons transport

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Science China Materials 2022年第11期65卷 3087-3095页

作者： yujie Yan rengjian yu Changsong Gao Ying Sui yunfeng Deng Huipeng Chen Tailiang Guo Institute of Optoelectronic Display National&Local United EngineeringLab of Flat Panel Display TechnologyFuzhou UniversityFuzhou 350002China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350100China School of Materials Science and Engineering Xiamen University of TechnologyXiamen 361024China School of Materials Science and Engineering Tianjin UniversityTianjin 300072China

Interfacial engineering at the dielectric/semiconductor interface is highly crucial for fabricating organic field-effect transistors with high *** this study,a bilayer MXene/semiconductor configuration is introduced to fabricate a high-performance n-type transistor,where electrical charges are formed and modulated at the SiO/semiconductor interface,and MXene nanosheets serve as the primary electrical charge channel due to their high mobility and long lateral *** electrical performance is optimized by adjusting the degree of connectivity of the MXene *** proposed MXene/poly{[N,N’-bis(2-octyl-dodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5’-(2,2’-bithiophene)}(N2200)transistors show boosted ntype characteristics,including a 100-fold increase in field-effect mobility,a large ON/OFF ratio of 10^(4),and a small subthreshold swing of 0.65 V dec^(-1),all of which are significantly improved compared with single-layer N2200 *** high performance of the two-dimensional MXene nanochannel is due to its electronegativity and high *** electronegativity significantly enhances electron transfer from N2200 to the MXene channel,where they are efficiently transported along the MXene ***,the MXene/p-type semiconductor transistors show suppressed ptype performance because of the highly negative MXene ***,the proposed bilayer MXene/n-type semiconductor configuration shows a good configuration generality and improved *** findings demonstrate the feasibility of fabricating high-performance ntype transistors using a bilayer MXene/semiconductor combination.

关键词： organic thin-film transistor n-type MXene electronegativity bilayer stack

CsPbBr_(3)quantum dots/PDVT-10 conjugated polymer hybrid film-based photonic synaptic transistors toward high-efficiency neuromorphic computing

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Science China Materials 2022年第11期65卷 3077-3086页

作者： Congyong Wang Qisheng Sun Gang Peng yujie Yan Xipeng yu Enlong Li rengjian yu Changsong Gao Xiaotao Zhang Shuming Duan Huipeng Chen Jishan Wu Wenping Hu Joint School of National University of Singapore and Tianjin University International Campus of Tianjin UniversityBinhai New CityFuzhou 350207China Department of Chemistry National University of Singapore3 Science Drive 3Singapore 117543Singapore Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of ChemistrySchool of ScienceTianjin University&Collaborative Innovation Center of Chemical Science and Engineering(Tianjin)Tianjin 300072China Institute of Optoelectronic Display National&Local United Engineering Lab of Flat Panel Display TechnologyFuzhou UniversityFuzhou 350002China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350100China School of Materials Science and Engineering Xiamen University of TechnologyXiamen 361024China

Photonic synaptic transistors are promising neuromorphic computing systems that are expected to circumvent the intrinsic limitations of von Neumann-based *** design and construction of photonic synaptic transistors with a facile fabrication process and highefficiency information processing ability are highly desired,while it remains a tremendous ***,a new approach based on spin coating of a blend of CsPbBr_(3) perovskite quantum dot(QD)and PDVT-10 conjugated polymer is reported for the fabrication of photonic synaptic *** combination of flat surface,outstanding optical absorption,and remarkable charge transporting performance contributes to high-efficiency photon-to-electron conversion for such perovskite-based ***-performance photonic synaptic transistors are thus fabricated with essential synaptic functionalities,including excitatory postsynaptic current(EPSC),paired-pulse facilitation(PPF),and long-term *** utilizing the photonic potentiation and electrical depression features,perovskite-based photonic synaptic transistors are also explored for neuromorphic computing simulations,showing high pattern recognition accuracy of up to 89.98%,which is one of the best values reported so far for synaptic transistors used in pattern *** work provides an effective and convenient pathway for fabricating perovskite-based neuromorphic systems with high pattern recognition accuracy.

关键词： CsPbBr_(3)quantum dots photonic synaptic transistor synaptic functionalities neuromorphic computing pattern recognition accuracy

基于铁电材料P(VDF-TrFE)调控的多级光突触晶体管

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光子学报 2021年第9期50卷 252-259页

作者：何立铧李恩龙俞礽坚陈惠鹏张国成福州大学平板显示技术国家地方联合工程实验室福州350102 福建工程学院微电子技术研究中心福州350108

利用有机材料PDVT-10中固有的持续光电导效应,结合铁电材料P(VDF-TrFE)提供的极化电场,通过调整铁电材料的极化强度来实现对光突触器件驰豫特性的调控。模拟了突触的短期可塑性、双脉冲易化性等基本功能,并进一步实现了多级、可调光突... 详细信息

利用有机材料PDVT-10中固有的持续光电导效应,结合铁电材料P(VDF-TrFE)提供的极化电场,通过调整铁电材料的极化强度来实现对光突触器件驰豫特性的调控。模拟了突触的短期可塑性、双脉冲易化性等基本功能,并进一步实现了多级、可调光突触。此外,持续光电导效应的驰豫现象与生物突触中Ca^(2+)的流动特性相类似,可以更好地模拟生物突触行为。研究结果为开发可调光突触提供了一个新的思路。

关键词：有机薄膜晶体管多级突触溶液法光输入 P(VDF-TrFE)

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人工道德基础器件:模拟道德逻辑的晶体管

Science China Materials 2024年第2期67卷 608-618页

作者：陈绍敏俞礽坚邹浥于希鹏刘常飞胡袁源郭太良陈惠鹏 Institute of Optoelectronic Display National&Local United Engineering Lab of Flat Panel Display TechnologyFuzhou UniversityFuzhou 350002China Department of Information Engineering Zhicheng CollegeFuzhou UniversityFuzhou 350002China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350100China College of Semiconductors(College of Integrated Circuits) Hunan UniversityChangsha 410082China

日益先进的人工智能在生活中的广泛应用,促进了人工道德问题的产生.机器人的人工伦理的建立和实施通常是通过被动程序指令解决的,而在硬件层面的主动实现仍然具有挑战性.在这里,受认知心理学和神经生理学的启发,我们展示了一种典型的人... 详细信息

日益先进的人工智能在生活中的广泛应用,促进了人工道德问题的产生.机器人的人工伦理的建立和实施通常是通过被动程序指令解决的,而在硬件层面的主动实现仍然具有挑战性.在这里,受认知心理学和神经生理学的启发,我们展示了一种典型的人工道德器件.通过判断善恶和解决道德困境,器件实现了机器人三定律中的第一定律.器件展示了自我、本我和超我三种状态,以及绝对命令、本能漠视、本能冲动、道德义务论、功利主义和利己主义等六种人性.道德的起源在电子学方面得到了揭示,这是潜意识和意识之间的对抗性协作.这项工作为未来人工智能的意识产生和道德形成提供了一条可行的道路.

关键词： artificial morality neuromorphic device transistor three laws of robotics subconsciousness

基于肖特基势垒调控的低能耗高识别精度的有机突触晶体管

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Science China Materials 2023年第11期66卷 4453-4463页

作者：陈天健俞衽坚高昌松陈振家陈惠鹏郭太良陈伟 Institute of Optoelectronic Display National&Local United Engineering Lab of Flat Panel Display TechnologyFuzhou UniversityFuzhou 350002China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350100China Joint School of National University of Singapore and Tianjin University International Campus of Tianjin UniversityFuzhou 350207China Department of Chemistry National University of SingaporeSingapore 117543Singapore Department of Physics National University of SingaporeSingapore 117543Singapore

为了构建类脑神经形态计算网络,单一的人工突触器件应该表现出极低的能量消耗,达到飞焦耳级别.然而,大多数现有的基于欧姆接触的低能耗突触器件实施方案,要么结构复杂,要么需要特定材料,这些因素都阻碍了人工神经网络的进一步发展.本文... 详细信息

为了构建类脑神经形态计算网络,单一的人工突触器件应该表现出极低的能量消耗,达到飞焦耳级别.然而,大多数现有的基于欧姆接触的低能耗突触器件实施方案,要么结构复杂,要么需要特定材料,这些因素都阻碍了人工神经网络的进一步发展.本文报告了一种肖特基势垒调控的有机突触晶体管(SBROST).通过在源电极和半导体之间的接触界面引入肖特基势垒,显著降低了单个突触事件的能耗,与使用欧姆接触的传统有机突触晶体管相比,SBROST的性能得到了改善.SBROST不仅可在低工作电压和电流下运行,还具有可适用于不同有机突触器件的简单结构.此外,SBROST可以实现低能耗下的高识别精度.经过100个周期,基于SBROST的手写人工神经网络表现出卓越的识别精度(93.53%),接近理想精度(95.62%).将肖特基势垒引入突触晶体管的方案为构建类脑神经计算网络提供了新的视角.

关键词： synaptic plasticity low energy consumption Schottky barrier high recognition accuracy artificial neural network