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Circuits and Systems 2011年第4期2卷 274-280页

作者： Shilpi birla Rakesh Kumar Singh Manisha Pattanaik 不详

Due to continuous scaling of CMOS, stability is a prime concerned for CMOS SRAM memory cells. As scaling will increase the packing density but at the same time it is affecting the stability which leads to write failures and read disturbs of the conventional 6T SRAM cell. To increase the stability of the cell various SRAM cell topologies has been introduced, 8T SRAM is one of them but it has its limitation like read disturbance. In this paper we have analyzed a novel PP based 9T SRAM at 45 nm technology. Cell which has 33% increased SVNM (Static Voltage Noise Margin) from 6T and also 22%.reduced leakage power. N curve analysis has been done to find the various stability factors. As compared to the 10T SRAM cell it is more area efficient.

关键词： N Curve Scaling SVNM (Static Voltage Noise Margin) Leakage Power 9T SRAM Cell

Phonon Dispersion for Armchair and Zigzag Carbon Nanotubes

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Graphene 2014年第2期3卷 14-19页

作者： Rasmita Sahoo rashmi Ranjan Mishra Department of Physics Birla Institute of Technology and Science Pilani Rajasthan India

In this paper we present calculations of phonon dispersion of different types of single walled carbon nanotubes (SWCNT). In these calculations, the starting point has been the phonon dispersion of graphene. Zone folding scheme is then applied to obtain the phonon dispersion of CNT from that of graphene. Since the radial breathing modes in the phonon dispersion are not obtained by the zone-folding method, certain modifications are made in the lower branches to obtain these modes. These modifications produce results similar to those obtained by more sophisticated ab-initio methods.

关键词： Carbon Nanotubes Zone Folding Phonon Dispersion

Analysis of 8T SRAM Cell at Various Process Corners at 65 nm Process Technology

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Circuits and Systems 2011年第4期2卷 326-329页

作者： Shilpi birla Neeraj Kumar Shukla Kapil Rathi Rakesh Kumar Singh Manisha Pattanaik 不详

In Present scenario battery-powered hand-held multimedia systems become popular. The power consumption in these devices is a major concern these days for its long operational life. Although various techniques to reduce the power dissipation has been developed. The most adopted method is to lower the supply voltage. But lowering the Vdd reduces the gate current much more rapidly than the sub-threshold current and degrades the SNM. This degraded SNM further limits the voltage scaling. To improve the stability of the SRAM cell topology of the conventional 6T Static Random Access Memory (SRAM) cell has been changed and revised to 8T and 10T cell, the topologies. This work has analyzed the SRAM’s Static Noise Margin (SNM) at 8T for various process corners at 65nm technology. It evaluates the SNM along with the write margins of the cell along with the cell size of 8T SRAM bit-cell operating in sub-threshold voltage at various process corners. It is observed that an 8T cell has 13 % better write margin than conventional 6T SRAM cell. This paper analyses the dependence of SNM of SRAM memory cell on supply voltage, temperature, transistor sizing in 65nm technology at various process corners (TT, SS, FF, FS, and SF).

关键词： SNM Sub-Threshold Current Gate Current Process Corners

APPROXIMATION　OF　GENERALIZED　BI－AXIALLY　SYMMETRIC　POTENTIALS　WITH　FAST　RATES　OF　GROWTH

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Acta Mathematica Scientia 1995年第4期15卷 458-467页

作者： H.S.Kasana(Dept.of Math., birla Iust.of Tech. & Sci.,Pilani-333 031(Rajasthan), India.D.Kumar)(Dept.of Math., D. S. M.Degree College, Kanth-244 501 (Moradabad),U.P.,India.) Dept. of Math. Birla Inst. of Tech. & Sci. Pilani–333 031 Rajasthan India Dept. of Math. D. S. M. Degree College Kanth–244 501 (Moradabad) U. P. India

The paper deals with growth and approximation of solutions (not necessarily entire) of certain elliptic partial differential equations. These solutions are called Generalized Bi-axially Symmetric Potentials (GBSP's). The GBSP's are taken to be regular in a finite hyperball and influence of the growth of their maximum moduli on the rate of decay of their approximation errors in sup norm is studied. The authors obtain the characterizations of the q-type and lower q-type of a GBSP H ∈ HP,0 < R < ∞, in terms of rate of decay of approximation error E.(H,R0), 0 < R0

关键词： Generalized bi-axially symmetric potentials Elliptic partial differential equations Index q Entire GBSP polynomials,Sup norm.

A Prospective, Multicentric, Post Marketing Surveillance to Evaluate Efficacy & Safety of Ranitidine HCl (150 & 300 mg IR/CR) in Indian Patients with Gastroesophageal Reflux Disease (PROGRADE)

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Open Journal of Gastroenterology 2023年第7期13卷 237-249页

作者： Akash Shukla Anil Kumar Awasthi Ramesh Rao Dawesh Prakash Yadav Nilesh Nolkha Rajesh Pendlimari Sanjiv Dua Shrish Bhatnagar Ravindra Mote Ashish birla Jay Savai Kapil Mehta Shashank Salunke Department of Gastroenterology Gastro Universe Mumbai India Department of Medicine Ajanta Research Centre Ajanta Hospital & IVF Centre Lucknow India Departmentof Nephrology Sanjeevani Kidney Care Mumbai India Department of Gastroenterology Institute of Medical Sciences Banaras Hindu University Varanasi India Department of Rheumatology Wockhardt Hospitals Mumbai India Department of Gastroenterology Rajalakshmi Hospital and Research Center Bangalore India Department of General Surgery SaiKripa Hospital Mumbai India Department of Gastroenterology Sparsh Child Care and Gastro Centre Lucknow India Department of Clinical Research Mediclin Clinical Research Mumbai India Department of Medical Affairs JB Chemicals & Pharmaceuticals Ltd. Mumbai India

Purpose: Ranitidine hydrochloride (HCl) remains an important medication for treating acid-peptic ailments such as Gastroesophageal reflux disease (GERD). The main objective of this Post Marketing Surveillance (PMS) clinical study was to test the efficacy and safety of Ranitidine HCl in Indian patients suffering from GERD. Patients and Methods: Data of 2446 patients (1307 males;1121 females) from 21 centers across India were analyzed. Patients received either of the three treatments: Ranitidine HCl 150 mg twice a day (BID) (ARM-A), Ranitidine HCl 300 mg once daily (OD) or BID (ARM-B), and Ranitidine HCl 300 mg OD (ARM-C). Gastroesophageal Reflux Disease Symptom Assessment Scale (GSAS) score and Heartburn Severity score were used to assess the drug’s efficacy. The adverse events reported by patients or investigators were analyzed to assess the safety profile of Ranitidine. Results: Of the 2446 subjects screened, 2428 were enrolled. There was a significant reduction in GSAS scores from baseline to the end of the study visit in all three ARMs. The GSAS scores reduced from 2.02 to 0.23 in ARM-A, 2.01 to 0.24 in ARM-B, and 2.07 to 0.26 in ARM-C patients. In ARM A, 72.82% had 24 hours heartburn-free days, and 66.89% had 7 consecutive heartburn-free days, which was more significant than the other two ARMs. 128 (5.27%) patients reported ADRs due to Ranitidine HCl at different doses. The most frequently reported ADR was constipation (17.18%), followed by oliguria (14.06%), cold (13.28%), and dysuria (12.5%). Of 128 ADRs, 113 (88.28%) were mild, and only 11 (8.59%) ADRs were related to the study drug. No severe ADRs were reported during the study. Conclusion: Ranitidine HCl 150/300 mg tablet was found to be an effective and safe H2-receptor antagonist for treating GERD in Indian Patients.

关键词： Ranitidine Hydrochloride GERD Heartburn H2-Receptor Antagonists