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Optical and electrical properties and phonon drag effect in low temperature TEP measurements of AgSbSe_2 thin films

Journal of Semiconductors 2014年第5期35卷 1-6页

作者： T Namitha Asokan K S Urmila rajani jacob Rachel Reena Philip G S Okram V Ganesan B Pradeep Solid State Physics Laboratory Department of Physics Cochin University of Science and Technology Thin Film Research Lab Department of Physics Union Christian College UGC-DAE Consortium for Scientific Research

Polycrystalline thin films of silver antimony selenide have been deposited using a reactive evaporation technique onto an ultrasonically cleaned glass substrate at a vacuum of 10-5 torr. The preparative parameters, like substrate temperature and incident fluxes, have been properly controlled in order to get stoichiometric, good quality and reproducible thin film samples. The samples are characterized by XRD, SEM, AFM and a UV-vis-NIR spectrophotometer. The prepared sample is found to be polycrystalline in nature. From the XRD pattern, the average particle size and lattice constant are calculated. The dislocation density, strain and number of crystallites per unit area are evaluated using the average particle size. The dependence of the electrical conductivity on the temperature has also been studied and the prepared AgSbSe2 samples are semiconducting in nature. The AgSbSe2 thin films exhibited an indirect allowed optical transition with a band gap of 0.64 eV. The compound exhibits promising thermoelectric properties, a large Seebeck coefficient of 30 mV/K at 48 K due to strong phonon electron interaction. It shows a strong temperature dependence on thermoelectric properties, including the inversion of a dominant carrier type from p to n over a low temperature range 9-300 K, which is explained on the basis of a phonon drag effect.

关键词： silver antimony selenide reactive evaporation thermoelectric power phonon drag effect

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