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Unmanned Ship Identification Based on Improved YOLOv8s Algorithm

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Computers, Materials & Continua 2024年第3期78卷 3071-3088页

作者： Chun-Ming Wu Jin Lei Wu-Kai Liu Mei-ling ren ling-Li Ran Key Laboratory of Modern Power System Simulation and Control&renewable Energy Technology School of Electrical EngineeringNortheast Electric Power UniversityJilin132012China School of Biomedical Engineering Taiyuan University of TechnologyTaiyuan030600China

Aiming at defects such as low contrast in infrared ship images,uneven distribution of ship size,and lack of texture details,which will lead to unmanned ship leakage misdetection and slow detection,this paper proposes an infrared ship detection model based on the improved YOLOv8 algorithm(R_YOLO).The algorithm incorporates the Efficient Multi-Scale Attention mechanism(EMA),the efficient Reparameterized Generalized-feature extraction module(CSPStage),the small target detection header,the Repulsion Loss function,and the context aggregation block(CABlock),which are designed to improve the model’s ability to detect targets at multiple scales and the speed of model *** algorithm is validated in detail on two vessel *** comprehensive experimental results demonstrate that,in the infrared dataset,the YOLOv8s algorithm exhibits improvements in various performance ***,compared to the baseline algorithm,there is a 3.1%increase in mean average precision at a threshold of 0.5(mAP(0.5)),a 5.4%increase in recall rate,and a 2.2%increase in mAP(0.5:0.95).Simultaneously,while less than 5 times parameters,the mAP(0.5)and frames per second(FPS)exhibit an increase of 1.7%and more than 3 times,respectively,compared to the CAA_YOLO ***,the evaluation indexes on the visible light data set have shown an average improvement of 4.5%.

关键词： Unmanned ships R_YOLO EMA CSPStage YOLOv8s

CAEFusion: A New Convolutional Autoencoder-Based Infrared and Visible Light Image Fusion Algorithm

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Computers, Materials & Continua 2024年第8期80卷 2857-2872页

作者： Chun-Ming Wu Mei-ling ren Jin Lei Zi-Mu Jiang Key Laboratory of Modern Power System Simulation and Control&renewable Energy Technology Ministry of EducationSchool of Electrical EngineeringNortheast Electric Power UniversityJilin132012China School of Electrical Engineering Northeast Electric Power UniversityJilin132012China School of Electronic Information Engineering Bozhou UniversityBozhou236800China

To address the issues of incomplete information,blurred details,loss of details,and insufficient contrast in infrared and visible image fusion,an image fusion algorithm based on a convolutional autoencoder is *** region attention module is meant to extract the background feature map based on the distinct properties of the background feature map and the detail feature map.A multi-scale convolution attention module is suggested to enhance the communication of feature *** the same time,the feature transformation module is introduced to learn more robust feature representations,aiming to preserve the integrity of image *** study uses three available datasets from TNO,FLIR,and NIR to perform thorough quantitative and qualitative trials with five additional *** methods are assessed based on four indicators:information entropy(EN),standard deviation(SD),spatial frequency(SF),and average gradient(AG).Object detection experiments were done on the M3FD dataset to further verify the algorithm’s performance in comparison with five other *** algorithm’s accuracy was evaluated using the mean average precision at a threshold of 0.5(mAP@0.5)*** experimental findings show that CAEFusion performs well in subjective visual and objective evaluation criteria and has promising potential in downstream object detection tasks.

关键词： Image fusion deep learning auto-encoder(AE) infrared visible light

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

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Nano-Micro Letters 2024年第12期16卷 134-188页

作者： Jing Chen Ming-Yuan Sun Zhen-Hua Wang Zheng Zhang Kai Zhang Shuai Wang Yu Zhang Xiaoming Wu Tian-ling ren Hong Liu Lin Han Institute of Marine Science and Technology Shandong UniversityQingdao 266237ShandongPeople’s Republic of China School of Integrated Circuits and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100084People’s Republic of China BNRist Tsinghua UniversityBeijing 100084People’s Republic of China State Key Laboratory of Crystal Materials Shandong UniversityJinan 250100ShandongPeople’s Republic of China Shenzhen Research Institute of Shandong University Shenzhen 518057People’s Republic of China Shandong Engineering Research Center of Biomarker and Artificial Intelligence Application Jinan 250100People’s Republic of China

Two-dimensional(2D)transition metal dichalcogenides(TMDs)allow for atomic-scale manipulation,challenging the conventional limitations of semiconductor *** capability may overcome the short-channel effect,sparking significant advancements in electronic devices that utilize 2D *** the dimension and performance limits of transistors based on 2D TMDs has gained substantial *** review provides a comprehensive investigation into these limits of the single 2D-TMD *** delves into the impacts of miniaturization,including the reduction of channel length,gate length,source/drain contact length,and dielectric thickness on transistor operation and *** addition,this review provides a detailed analysis of performance parameters such as source/drain contact resistance,subthreshold swing,hysteresis loop,carrier mobility,on/off ratio,and the development of p-type and single logic *** review details the two logical expressions of the single 2D-TMD logic transistor,including current and *** also emphasizes the role of 2D TMD-based transistors as memory devices,focusing on enhancing memory operation speed,endurance,data retention,and extinction ratio,as well as reducing energy consumption in memory devices functioning as artificial *** review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic *** review not only summarizes the current state of the art in this field but also highlights potential future research directions and *** underscores the anticipated challenges,opportunities,and potential solutions in navigating the dimension and performance boundaries of 2D transistors.

关键词： Two-dimensional transistors Dimension limits Performance limits Memory devices Artificial synapses

Observation of stabilized negative capacitance effect in hafnium-based ferroic films

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Materials Futures 2024年第1期3卷 1-9页

作者： Leilei Qiao Ruiting Zhao Cheng Song Yongjian Zhou Qian Wang Tian-ling ren Feng Pan Key Laboratory of Advanced Materials(MOE) School of Materials Science and EngineeringTsinghua UniversityBeijing 100084People’s Republic of China Institute of Microelectronics&Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100084People’s Republic of China

A negative capacitance(NC)effect has been proposed as a critical pathway to overcome the‘Boltzmann tyranny’of electrons,achieve the steep slope operation of transistors and reduce the power dissipation of current semiconductor *** particular,the ferroic property in hafnium-based films with fluorite structure provides an opportunity for the application of the NC effect in electronic ***,to date,only a transient NC effect has been confirmed in hafnium-based ferroic materials,which is usually accompanied by hysteresis and is detrimental to low-power transistor *** stabilized NC effect enables hysteresis-free and low-power transistors but is difficult to observe and demonstrate in hafnium-based *** difficulty is closely related to the polycrystalline and multi-phase structure of hafnium-based films fabricated by atomic layer deposition or chemical solution ***,we prepare epitaxial ferroelectric Hf_(0.5)Zr_(0.5)O_(2) and antiferroelectric ZrO_(2) films with single-phase structure and observe the capacitance enhancement effect of Hf_(0.5)Zr_(0.5)O_(2)/Al_(2)O_(3) and ZrO_(2)/Al_(2)O_(3) capacitors compared to that of the isolated Al_(2)O_(3) capacitor,verifying the stabilized NC *** capacitance of Hf_(0.5)Zr_(0.5)O_(2) and ZrO_(2) is evaluated as−17.41 and−27.64 pF,*** observation of the stabilized NC effect in hafnium-based films sheds light on NC studies and paves the way for low-power transistors.

关键词： negative capacitance effect fluorite structure hafnium-based ferroelectrics antiferroelectric

The Roadmap of 2D Materials and Devices Toward Chips

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Nano-Micro Letters 2024年第6期16卷 343-438页

作者： Anhan Liu Xiaowei Zhang Ziyu Liu Yuning Li Xueyang Peng Xin Li Yue Qin Chen Hu Yanqing Qiu Han Jiang Yang Wang Yifan Li Jun Tang Jun Liu Hao Guo Tao Deng Songang Peng He Tian Tian‑ling ren School of Integrated Circuits and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100049People’s Republic of China School of Microelectronics Fudan UniversityShanghai 200433People’s Republic of China State Key Laboratory of Dynamic Measurement Technology Shanxi Province Key Laboratory of Quantum Sensing and Precision MeasurementNorth University of ChinaTaiyuan 030051People’s Republic of China High‑Frequency High‑Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029People’s Republic of China School of Electronic and Information Engineering Beijing Jiaotong UniversityBeijing 100044People’s Republic of China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100049People’s Republic of China IMECAS-HKUST-Joint Laboratory of Microelectronics Beijing 100029People’s Republic of China

Due to the constraints imposed by physical effects and performance degra certain limitations in sustaining the advancement of Moore’s ***-dimensional(2D)materials have emerged as highly promising candidates for the post-Moore era,offering significant potential in domains such as integrated circuits and next-generation ***,in this review,the progress of 2D semiconductors in process engineering and various electronic applications are summarized.A careful introduction of material synthesis,transistor engineering focused on device configuration,dielectric engineering,contact engineering,and material integration are given *** 2D transistors for certain electronic applications including digital and analog circuits,heterogeneous integration chips,and sensing circuits are ***,several promising applications(artificial intelligence chips and quantum chips)based on specific mechanism devices are ***,the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed,and potential development pathways or roadmaps are further speculated and outlooked.

关键词： Two-dimensional materials Roadmap Integrated circuits Post-Moore era

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Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

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Nano-Micro Letters 2024年第12期 142-196页

作者： Jing Chen Ming-Yuan Sun Zhen-Hua Wang Zheng Zhang Kai Zhang Shuai Wang Yu Zhang Xiaoming Wu Tian-ling ren Hong Liu Lin Han Institute of Marine Science and Technology Shandong University BNRist Tsinghua University Shenzhen Research Institute of Shandong University School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University State Key Laboratory of Crystal Materials Shandong University Shandong Engineering Research Center of Biomarker and Artificial Intelligence Application

Two-dimensional(2D) transition metal dichalcogenides(TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.

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幼儿园户外自主游戏中幼儿学习品质的培养研究

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教育理论与实践 2024年第17期44卷 62-64页

作者：韩仁玲山西省长治市康园幼儿园山西长治046031

幼儿园户外自主游戏与幼儿学习品质培养是当前学前教育的热点。幼儿学习品质具有支持学习成功和入学准备的双重价值,是促进幼儿可持续发展的“内核力”。幼儿园户外自主游戏在幼儿学习品质发展方面有着独特的教育价值。当前幼儿园户外... 详细信息

幼儿园户外自主游戏与幼儿学习品质培养是当前学前教育的热点。幼儿学习品质具有支持学习成功和入学准备的双重价值,是促进幼儿可持续发展的“内核力”。幼儿园户外自主游戏在幼儿学习品质发展方面有着独特的教育价值。当前幼儿园户外自主游戏中幼儿学习品质培养出现环境创设缺乏儿童视角、材料投放缺乏科学性、观察指导缺乏有效性等问题,幼儿园户外自主游戏中幼儿学习品质的培养策略是:从创设基于儿童立场的支持性环境、投放符合儿童需要的科学性材料、实施立足儿童视角的有效性指导。

关键词：幼儿园户外自主游戏幼儿学习品质支持性环境科学性材料有效性指导

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番茄穴盘苗移栽机翻转式取送苗装置设计与试验

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农机化研究 2024年第7期46卷 89-95页

作者：赵明任玲李韬王双石河子大学机械电气工程学院新疆石河子832000

目前,国内番茄穴盘苗半自动移栽仍需人工完成取投苗,生产效率较低。为此,开发了一种翻转式移栽机自动取送苗装置。以整排取苗式自动移栽机为研究对象,根据苗盘尺寸及取送工作流程进行取送苗装置结构设计,主要包括连杆机构构成的移栽机... 详细信息

目前,国内番茄穴盘苗半自动移栽仍需人工完成取投苗,生产效率较低。为此,开发了一种翻转式移栽机自动取送苗装置。以整排取苗式自动移栽机为研究对象,根据苗盘尺寸及取送工作流程进行取送苗装置结构设计,主要包括连杆机构构成的移栽机机械臂、滑块机构构成的三爪取送苗机械手及根据不同工作间距设计的分苗装置,以期设计一种能够在单驱动元件情况下,依靠简单运动轨迹完成取投苗工作的装置。通过SolidWorks仿真软件进行运动学分析,获取机械臂末端运动轨迹、速度并分析机械臂末端轨迹。进行轨迹验证及取送苗性能试验,结果表明:机械臂末端轨迹与仿真及理论结果一致,验证了翻转式取送苗装置能够利用简单轨迹简化取苗流程。研究结果可为整排式取苗移栽机自动取送苗装置的设计提供参考。

关键词：取送苗机构机械臂运动学仿真机械臂轨迹试验

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电感耦合等离子体原子发射光谱基体匹配校准法测定镍基合金中铬含量

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光谱学与光谱分析 2024年第8期44卷 2250-2255页

作者：刘洁谭胜楠戚振南任玲玲葛晶晶孙中华河北河钢材料技术研究院有限公司河北石家庄050000

铬元素在镍基合金中具有多重作用,对增加合金涂层耐磨性具有突出贡献,同时,铬能在高温燃气作用下生成致密的氧化保护膜,显著提高合金抗高温氧化和热疲劳性能。在高铬含量的情况下,铬容易与合金中的钛、铝、钼等元素形成有害相而降低合... 详细信息

铬元素在镍基合金中具有多重作用,对增加合金涂层耐磨性具有突出贡献,同时,铬能在高温燃气作用下生成致密的氧化保护膜,显著提高合金抗高温氧化和热疲劳性能。在高铬含量的情况下,铬容易与合金中的钛、铝、钼等元素形成有害相而降低合金的强度。对镍基合金中铬元素的准确定值非常关键。镍基合金样品使用氢氟酸、盐酸、硝酸经过微波消解后,采用基体匹配,配制校准溶液测定镍基合金中铬元素在分析谱线的净强度从而计算得出含量。针对镍基合金中镍、钼、铁等高含量元素对铬含量测定有干扰,选择干扰元素少、灵敏度适中的266.602 nm为分析谱线,系统考察了基体效应和共存元素的干扰效应,采用配制校准溶液时,将含量大于5%的元素均进行等同含量的匹配,配制铬元素低标校准溶液Kl Cr,配制铬元素高标校准溶液Kh Cr,制备样品溶液KS Cr,利用电感耦合等离子体原子发射光谱仪,依次测定低标校准溶液Kl Cr、样品溶液KS Cr、高标校准溶液Kh Cr在分析谱线的净强度,按照公式计算得出铬含量。利用标准参考物质评价了方法的准确性,采用YS/T 539.4—2009进行对比分析验证了方法的可靠性。结果表明,方法的检出限(LOD)和定量限(LOQ)分别为0.05和0.10μg·mL^(-1),测定结果的相对标准偏差(RSD)不大于2.5%,标准参考物质的测定值与认定值对比分析结果的相对误差(RE)小于2.5%。该方法操作方便、检测准确,拓宽了ICP-OES光谱法测定镍基合金中铬元素含量的检测范围,检测下限由2%降为0.1%,检测范围上限由30%升为33.5%,大大提高了镍基合金中铬元素含量检测的效率和准确度,适用于各种牌号的镍基合金中铬元素含量的测定。

关键词：电感耦合等离子体原子发射光谱基体匹配校准法镍基合金铬

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