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Influence of manganese rate on structural, optical and electrochemical properties of CeO_(2) thin films deposited by spray pyrolysis:Supercapacitor applications

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Journal of rare Earths 2022年第10期40卷 1611-1618页

作者： J.Zimou K.Nouneh A.Talbi L.El Gana A.El-Habib r.hsissou M.Addou Laboratory of Materials Physics and Subatomic Department of PhysicsFaculty of ScienceIbn Tofail UniversityBP 13314000KenitraMoroco Thin Film and Nanomaterial research Team Faculty of Science and TechiquesAbdelmalek Essadi UniversityTangerMorocco Laboratory of Organic Chemistry Catalysis and EnvironmentFaculty of SciencesIbn Tofail UniversityBP 24214000KenitraMorocco

The present work aimed to investigate the electrochemical properties of ITO substrates in propylene carbonate(PC) with 0.5 mol/L lithium perchlorate(LiClO_(4)) medium in the presence of elaborated thin films of cerium dioxide pure and doped with manganese at varying ***_(1-x)Mn_(x)O_(2)(x=0 wt%,2 wt%,4 wt% and 6 wt%) were successfully deposited by the spray pyrolysis(SP) technique on the glass substrate and ITO at 450℃.The effects of manganese(Mn) doped thin films Ce_(1-x)Mn_(x)O_(2) were studied and investigated by using different analyses namely X-ray diffraction(XrD) analysis,raman spectroscopy method,UV-Vis spectrophotometer technique,atomic force microscopy(AFM) analysis and electrochemical *** data obtained present a polycrystalline with a face-centred cubic structure of fluorite *** results of undoped and Mn doped thin films show two peaks at 465 and 600 cm^(-1),due to the formation of extrinsic oxygen vacancies by the incorporation of Mn into Ce1-xMnxO_(2) *** dispersive spectroscopy(EDS) data show the presence of Ce,O,and Mn elements in the elaborated *** AFM results reveal that the surface roughness decreases with increasing Mn ***,band gap energy of thin films decreases with increasing in Mn rate due to the formation of defect state between valence and conduction *** storage capacity of the elaborated Ce_(1-x)Mn_(x)O_(2)/ITO/PC+LiClO_(4) electrode reaches a maximum of 1.997 mF in the presence of 6 wt% of Mn.

关键词： Ce1-xMnxO_(2)thin films Electrochemical properties ITO substrates XrD/UV-Vis/AFM Band gap energy Storage capacity

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