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Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric

Science China(Information Sciences) 2024年第6期67卷 180-189页

作者： Ali IMRAN Xin HE Jiwei LIU qinghai zhu Muhammad SULAMAN Fei XUE Mingsheng XU Deren YANG College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University ZJU-Hangzhou Global Scientific and Technological Innovation Centre School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems School of PhysicsBeijing Institute of Technology

The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical, security surveillance, robotics, automotive, quality control, image recognition, and military applications, due to their superior quality, broadband detection, lower noise, and economic viability. Here,we report a MoS2channel-based phototransistor over an HfO2/n-Si substrate isolated by an h BN layer. The high photoresponse is achieved through the integration of the photoconduction, photogating, and mobility enhancement process by utilizing excellent features of MoS2, HfO2/Si, and h BN. The capacitive coupling of the photogenerated carriers by high-k dielectric HfO2leads to modulation of MoS2Fermi level due to electrostatic doping. Furthermore, the MoS2also contributes to the photogeneration of carriers due to its semiconducting nature, leading to additional photocurrent. Ultimately, the combination of photogating,photoconduction, and swift carrier extraction with remarkable mobility of 11.65 cm2· V-1· s-1results in high responsivity, external quantum efficiency, and detectivity of 4.5 × 10～8A · W-1, 0.72 × 10～6, and 6.20× 1016Jones at 266 nm illumination, respectively. The device also demonstrates broadband photoresponse from 266–1000 nm wavelengths. The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

关键词： photogating photoconduction two-dimensional materials high $~k$ dielectric carrier scattering phototransistor

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Highly responsive broadband Si-based MoSphototransistor on high-k dielectric

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Science China(Information Sciences) 2024年

作者： Ali IMRAN Xin HE Jiwei LIU qinghai zhu Muhammad SULAMAN Fei XUE Mingsheng XU Deren YANG Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems School of PhysicsBeijing Institute of Technology ZJU-Hangzhou Global Scientific and Technological Innovation Centre College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University

The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical, security surveillance, robotics, automotive, quality control, image recognition, and military applications, due to their superior quality, broadband detection, lower noise, and economic viability. Here,we report a MoS2channel-based phototransistor over an HfO2/n-Si substrate isolated by an h BN layer. The high photoresponse is achieved through the integration of the photoconduction, photogating, and mobility enhancement process by utilizing excellent features of MoS2, HfO2/Si, and h BN. The capacitive coupling of the photogenerated carriers by high-k dielectric HfO2leads to modulation of MoS2Fermi level due to electrostatic doping. Furthermore, the MoS2also contributes to the photogeneration of carriers due to its semiconducting nature, leading to additional photocurrent. Ultimately, the combination of photogating,photoconduction, and swift carrier extraction with remarkable mobility of 11.65 cm2·V-1·s-1results in high responsivity, external quantum efficiency, and detectivity of 4.5×108A·W-1, 0.72×106, and 6.20×1016Jones at 266 nm illumination, respectively. The device also demonstrates broadband photoresponse from 266–1000 nm wavelengths. The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

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Gate-tunable high-performance broadband phototransistor array of two-dimensional PtSe_(2) on SOI

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Nano Research 2023年第5期16卷 7559-7567页

作者： Yexin Chen qinghai zhu Xiaodong zhu Yijun Sun Zhiyuan Cheng Jing Xu Mingsheng Xu School of Micro-Nano Electronics State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027China State Key Laboratory of Silicon Materials School of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China College of Information Science&Electronic Engineering Zhejiang UniversityHangzhou 310027China Key Laboratory of Ocean Observation-Imaging Testbed of Zhejiang Province Ocean CollegeZhejiang UniversityZhoushan 316021China

Two-dimensional(2D)layered materials have attracted extensive research interest in the field of high-performance photodetection due to their high carrier mobility,tunable bandgap,stability,other excellent properties.Herein,we propose a gate-tunable,high-performance,self-driving,wide detection range phototransistor based on a 2D PtSe_(2)on silicon-oninsulator(SOI).Benefiting from the strong built-in electric field of the PtSe_(2)/Si heterostructure,the phototransistor has a fast response time(rise/fall time)of 36.7/32.6μs.The PtSe_(2)/Si phototransistor exhibits excellent photodetection performance over a broad spectral range from ultraviolet to near-infrared,including a responsivity of 1.07 A/W and a specific detectivity of 6.60×10^(9)Jones under 808 nm illumination at zero gate voltage.The responsivity and specific detectivity of PtSe_(2)/Si phototransistor at 5 V gate voltage are increased to 13.85 A/W and 1.90×10^(10) Jones under 808 nm illumination.Furthermore,the fabricated PtSe_(2)/Si phototransistor array shows excellent uniformity,reproducibility,long-term stability in terms of photoresponse performance with negligible variation between pixel cells.The architecture of present PtSe_(2)/Si on SOI platform paves a new way of a general strategy to realize high-performance photodetectors by combining the advantages of both 2D materials and conventional semiconductors which is compatible with current Si-complementary metal oxide semiconductor(CMOS)process.

关键词： two-dimensional PtSe_(2) silicon-on-insulator(SOI) heterojunction phototransistor gate voltage modulation

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Clinical management of primary odontogenic sarcoma in the mandible:a case report after WHO nomination

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The Journal of Biomedical Research 2022年第1期36卷 68-72页

作者： qinghai zhu Chenxing Wang Yizhou Wang Songsong Guo Jinhai Ye Jiangsu Key Laboratory of Oral Diseases Nanjing Medical UniversityNanjingJiangsu 210029China Depatment of Oral and Maxillofacial Surgery the Affiliated Stomatological Hospital of Nanjing Medical UniversityNanjingJiangsu 210029China

Ameloblastic fibro-odontosarcoma(AFOS)now designated as odontogenic sarcoma is an extremely rare odontogenic tumor,which histologically presents as a biphasic neoplasm with a malignant mesenchymal component plus ameloblastic epithelium.Here we report a 27-year-old Chinese female with the complaint of a painful swelling for half a month in the right mandible.A segmental mandibulectomy,with an immediate mandibular reconstruction using a free vascularized osteocutaneous fibular flap was performed using surgical guide models.Histological analysis revealed a primary odontogenic sarcoma.The postoperative period was uneventful,and no clinical indication of recurrence or metastasis was observed during the 3-year follow-up.No adjuvant therapy was proposed.This is the first odontogenic sarcoma case reported in China after the new World Health Organization classification of odontogenic lesions.

关键词： odontogenic sarcoma ameloblastic fibrosarcoma ameloblastic fibro-odontosarcoma mandibular reconstruction

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High performance IEICO-4F/WSe_(2)heterojunction photodetector based on photoluminescence quenching behavior

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Nano Research 2022年第9期15卷 8595-8602页

作者： qinghai zhu Yexin Chen Tianyi Chen Lijian Zuo Yijun Sun Rong Wang Mingsheng Xu School of Micro-Nano Electronics State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027China Department of Polymer Science and Engineering State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027China College of Information Science&Electronic Engineering Zhejiang University38 Zheda RoadHangzhou 310027China ZJU Hangzhou Global Sci&Technol Innovation Centre Adv Semiconductor Research InstituteHangzhou 311215China

Heterostructure is the basic building block for functional optoelectronic devices.Heterostructures consisting of two-dimensional(2D)transition metal dichalcogenides(TMDs)and organic semiconductors are currently attracting great interest for highperformance optoelectronics.However,how to design heterostructure for highly efficient optoelectronic devices remains a big challenge.Here we design high-performance organic semiconductor/WSe_(2)heterostructure photodetectors by tailoring the charge transfer effect between 2,2ʹ-((2Z,2ʹZ)-(((4,4,9,9-tetrakis(4-hexylphenyl)-4,9-dihydros-indaceno[1,2-b:5,6-bʹ]dithiophene-2,7-diyl)bis(4-((2-ethylhexyl)oxy)thiophene-5,2-diyl))bis(methanylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile(IEICO-4F)organic semiconductors with various thicknesses and monolayer WSe_(2).With the increase of IEICO-4F layer thickness,the photoluminescence(PL)characteristics of WSe_(2)could be completely quenched due to the charge transfer from the lowest unoccupied molecular orbital(LUMO)level of IEICO-4F to the conduction band minimum(CBM)of WSe_(2).Benefiting from the exquisite charge transfer behavior,the IEICO-4F/WSe_(2)heterojunction photodetector with optimized 6.0-nm thick IEICO-4F shows high performance including the responsivity of 8.32 A/W and specific detectivity of 4.65×10^(11)Jones at incident light of 808 nm.This work demonstrates a simple approach based on PL characteristics to design high-performance IEICO-4F/WSe_(2)heterojunction,thus paving the way for the development of excellent optoelectronic devices based on organic/TMD heterostructures.

关键词： tungsten diselenide organic semiconductor type-II heterojunction photoluminescence quenching photodetector

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基于函数型数据分析算法的电阻性本质安全电路电弧放电模型

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电工技术学报 2024年第7期39卷 1943-1956页

作者：朱冉徐礼文孟庆海北方工业大学电气与控制工程学院北京100144 北方工业大学理学院北京100144

区别于电感性和电容性本质安全电路,电阻性本质安全电路的电弧放电波形因具有三种类型一直无法被准确描述,且电阻性电路本质安全判据的不完善描述会导致实际运行条件下爆炸事故的多发性。对此,该文首先考虑电阻性本质安全电路的放电过... 详细信息

区别于电感性和电容性本质安全电路,电阻性本质安全电路的电弧放电波形因具有三种类型一直无法被准确描述,且电阻性电路本质安全判据的不完善描述会导致实际运行条件下爆炸事故的多发性。对此,该文首先考虑电阻性本质安全电路的放电过程及波形特征,基于函数型数据分析回归算法,建立了高维、参数强相关、适用范围广的电阻性电路电弧放电数学模型,并基于模型建立了相应的本质安全能量判据;然后采用该模型模拟电阻性电路放电过程并提出了一种电弧放电波形分类方法,发现在特定电路参数条件下,当电路正常工作电流I≤0.15 A或I≥0.6 A时,电弧放电基本呈现典型放电形式;最后搭建火花放电试验平台,验证了所建电弧模型的可行性与预测效果的准确性。

关键词：电弧放电数学模型本质安全函数型数据能量判据

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改进粒子群算法的自动充电机械臂时间最优轨迹研究

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机械科学与技术 2024年第3期43卷 423-429页

作者：朱浩赵清海郑群锋宁长久青岛大学机电工程学院山东青岛266071 青岛大学电动汽车智能化动力集成技术国家地方联合工程研究中心山东青岛266071 北京理工大学机械与车辆学院北京100081

针对桁架充电机械臂关节空间轨迹规划的时间优化问题,提出了一种非线性动态学习因子的粒子群算法。通过运动学分析获取工作空间,引入3-5-3多项式插值进行轨迹规划。结合运动过程中的速度与加速度约束,寻求运动过程中的最短时间。对比改... 详细信息

针对桁架充电机械臂关节空间轨迹规划的时间优化问题,提出了一种非线性动态学习因子的粒子群算法。通过运动学分析获取工作空间,引入3-5-3多项式插值进行轨迹规划。结合运动过程中的速度与加速度约束,寻求运动过程中的最短时间。对比改进粒子群算法和基本粒子群算法的收敛速度,分析各关节优化前后运动时间的变化情况,并进行仿真实验验证。结果表明:改进粒子群算法的收敛性能较基本粒子群算法更快,整体运动时间缩短约33%,证实改进粒子群算法的可行性。

关键词：桁架充电机械臂时间优化非线性动态学习因子粒子群算法

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Hot Deformation Behavior and Microstructures Evolution of GNP-Reinforced Fine-Grained Mg Composites

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Acta Metallurgica Sinica(English Letters) 2024年第3期37卷 407-424页

作者： Hengrui Hu Jiayu Qin Yunpeng zhu Jinhui Wang Xiaoqiang Li Peipeng Jin qinghai Provincial Key Laboratory of New Light Alloys Qinghai UniversityXining 810016China qinghai Provincial Engineering Research Center of High Performance Light Metal Alloys and Forming Qinghai UniversityXining 810016China Department of Mechanical Engineering Tsinghua UniversityBeijing 100084China School of Material Science and Engineering Lanzhou University of TechnologyLanzhou 730050China

Graphene nanoplates(GNPs)-reinforced magnesium matrix composites have been attracted great attention.However,knowledge is lack for the hot deformation behavior of GNP-reinforced magnesium(GNPs/Mg)composite.In this study,the fine-grained GNPs/Mg composite was fabricated by powder metallurgy process followed by extrusion.The hot deformation behavior,microstructure evolution and dynamic recrystallization(DRX)mechanism of fine-grained GNPs/Mg composite were investigated by hot compression test and electron back-scatter diffraction(EBSD).The hot compression tests of the composite were conducted at temperatures between 423 and 573 K with the strain rates from 0.001 to 1 s^(-1).The strain compensated power law equation was established to describe the hot deformation behavior of the composites.The stress exponent and activation energy of the composite are 7.76 and 83.23 kJ/mol,respectively,suggesting that the deformation mechanism is grain boundary slip controlled dislocation climb creep.The abnormally high stress exponent and activation energy are unattainable in the composite due to the fine grain size of the composites and the absence of Zener pinning and Orowan effects of GNPs reinforcement.The grain size increases with the decrease in Zener-Hollomn(Z)parameter,which can be well fitted by power-law relationship.With the increase in grain size and decrease in Z parameter,the geometrically necessary dislocation density decreases,which shows the approximately power-law relationship.A random and weak texture was formed after hot compression.The discontinuous dynamic recrystallization and continuous dynamic recrystallization mechanism dominated the DRX behavior at 473 K/0.001 s^(-1) and 573 K/0.001 s^(-1),respectively.

关键词： GNPs Mg composite Hot deformation behavior Constitutive equations Microstructure evolution Dynamic recrystallization

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Preface to integrative stratigraphy,biotas,and paleogeographical evolution of the qinghai-Tibetan Plateau and its surrounding areas

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Science China Earth Sciences 2024年第4期67卷 895-898页

作者： Shuzhong SHEN Lin DING Maoyan zhu Xiangdong WANG Tao DENG State Key Laboratory for Mineral Deposits Research School of Earth Sciences and Engineering and Frontiers Science Center for Critical Earth Material CyclingNanjing UniversityNanjing 210023China State Key Laboratory of Tibetan Plateau Earth System Resources and EnvironmentInstitute of Tibetan Plateau ResearchChinese Academy of SciencesBeijing 100101China State Key Laboratory of Palaeobiology and Stratigraphy Nanjing Institute of Geology and Palaeontology and Center for Excellence in Life and PalaeoenvironmentChinese Academy of SciencesNanjing 210008China College of Earth and Planetary Sciences University of Chinese Academy of SciencesBeijing 100049China Key Laboratory of Vertebrate Evolution and Human Origins of Chinese Academy of Sciences Institute of Vertebrate Paleontology and PaleoanthropologyChinese Academy of SciencesBeijing 100044China

The qinghai-Tibetan Plateau(QTP)is well known as the Roof of the World,the Third Pole and the Asian Water Tower.It spans a vast area from the Pamir Plateau in the west to the Longmenshan-Hengduan Mountains in the east,from the Himalaya Mountains in the south to the Kunlun-Qilian Mountains in the north.It stretches approximately 1,200 km from north to south and 2,500 km from east to west.When did the QTP start to uplift?This is still controversial between early and late Cenozoic scenarios.While some scholars advocated its uplift since the India-Asia continental collision at about 65 million years ago in the Paleogene(e.g.,Ding et al.,2017,2022),and the others suggested its uplift since the Miocene(Zheng and Wu,2018).

关键词： uplift Tibetan north

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A perspective to ammonia-hydrogen energy industry in China

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Science China Chemistry 2024年第6期67卷 1765-1775页

作者： Baoshun Zhang Wangyang Ji Jiewei zhu Baian Shen Menghao Lv Bin Zhang Tihu Wang Yifu Yu Department of Chemistry Institute of Molecular PlusSchool of ScienceTianjin UniversityTianjin300072China Tianjin University-Asia Silicon Joint Research Center of Ammonia-Hydrogen New Energy Asia Silicon(Qinghai)Co.Ltd.Xining810007China Department of Catalysis Science and Engineering School of Chemical Engineering and TechnologyTianjin UniversityTianjin300072China

1 Introduction.To meet the 1.5℃ climate goal in our planet,the world is making a hard work for decarbonization[1-5].Constructing a clean energy system based on green energy is considered as the most promising way to achieve the decarbonization goals.Northwestern China owns abundant solar and wind sources and large area of deserts[6,7].

关键词： ammonia planet energy

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