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Rare Metals 2018年第8期37卷 690-698页

作者： dong-qing li li-Xian Zhou Kuan-Jun Zhu Jian Gu Shu-Hui Zheng Department of Transmission and Transformation Engineering Mechanics China Electric Power Research Institute

B2 FeA1 intermetallic compounds modified with reactive elements （REs） including Sc and Y were fabricated by vacuum arc-melting, and the isothermal oxidation behavior of the RE-doped alloys at 1373 K was investigated. Both Sc and Y single-doping significantly decrease the alumina film growth rate of the alloys. The alumina film growth rate of Sc＋ Y co-doped alloy even further reduces compared to that of the Sc and Y single-doped alloys. The synergistic effect produced by Sc＋ Y codoping on the growth behavior of alumina was discussed. It could be anticipated that the combined additions of Sc and Y which have matched chemical properties might decrease the alumina film growth rate more effectively and provide FeA1 alloys with enhanced oxidation resistance.

关键词： Ferritic aluminides Reactive elements Codoping Isothermal oxidation Segregation

Enhanced alumina film adhesion of Hf/Y-doped iron-aluminum alloys during high-temperature oxidation:a new observation

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Rare Metals 2019年第9期38卷 877-884页

作者： dong-qing li li-Xian Zhou Jun Zhan Jing-Chao Wang Jian Gu Jia-Jun Si Department of Transmission and Transformation Engineering Mechanics China Electric Power Research Institute

The cyclic oxidation behavior of Hf/Y-doped B2 FeAl intermetallics at 1373 K was *** an undoped FeAl alloy,premature spallation of the alumina film occurs due to the formation of numerous voids at the film/alloy interface and apparent shrinkage in the *** contrast to this,doping with either Hf or Y significantly improves the interfacial adhesion between the alumina film and the alloy substrate,particularly with *** observation in combination with Anger electron spectroscopic analysis suggests that in addition to prohibiting interfacial void formation and alleviating film shrinkage,the addition of Hf in the FeAl alloy could consolidate the film/alloy interface by directly participating in chemical bonding across the interface as a Hf *** causes the spallation of alumina film from the equiaxed grains/columnar grains interface rather than the bottom of the film.

关键词： Intermetallics Reactive elements Thermal cycling Alumina film Interfacial adhesion Segregation

Survivin-positive circulating tumor cells as a marker for metastasis of hepatocellular carcinoma

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World Journal of Gastroenterology 2021年第43期27卷 7546-7562页

作者： Jing Yu Zhan Wang Hua Zhang Yi Wang dong-qing li Blood Transfusion Department Wuhan Chinese and Western Medicine HospitalWuhan 430022Hubei ProvinceChina Laboratory Tianjin HospitalTianjin 300211China Laboratory Guoyao Dongfeng HospitalShiyan 442008Hubei ProvinceChina Department of Microbiology School of Basic Medical SciencesWuhan UniversityWuhan 430000Hubei ProvinceChina

BACKGROUND Circulating tumor cells(CTCs)and survivin are indicators for tumor stage and metastasis,as well as epitheliomesenchymal transition,in various cancers,including hepatocellular cancer(HCC).AIM To explore the potential of survivin-positive CTCs,specifically,as a marker for tumor progression in HCC *** We examined the survivin expression pattern in CTCs obtained from 179 HCC patients,and investigated the in vitro effects of survivin silencing and overexpression on the proliferation and invasion of HCC *** count and survivin expression in patient samples were examined using RNA in situ *** All 179 patients were positive for CTC markers,and 94.41%of the CTCs were positive for *** CTC and survivin-positive CTC counts were significantly higher in the HCC patients than in the normal controls,and were significantly associated with tumor stage and degree of ***,survivin overexpression was found to induce HepG2 cell proliferation,reduce apoptosis,and improve invasive *** Survivin shows upregulated expression(indicative of anti-apoptotic effects)in ***,survivin-positive CTCs are promising as a predictor of HCC prognosis and metastasis,and their accurate measurement may be useful for the management of this cancer.

关键词： Survivin Circulating tumor cells Hepatocellular carcinoma Prognosis Metastasis

Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

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Nuclear Science and Techniques 2019年第5期30卷 92-102页

作者： Chang Cai Tian-Qi liu Xiao-Yuan li Jie liu Zhan-Gang Zhang Chao Geng Pei-Xiong Zhao dong-qing li Bing Ye qing-Gang Ji li-Hua Mo Institute of Modern Physics Chinese Academy of Sciences University of Chinese Academy of Sciences School of Physical Science and Technology Lanzhou University Academy of Shenzhen State Microelectronic Co. Ltd. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory

Single event effects of 1-T structure programmable read-only memory(PROM) devices fabricated with a 130-nm complementary metal oxide semiconductorbased thin/thick gate oxide anti-fuse process were investigated using heavy ions and a picosecond pulsed laser. The cross sections of a single event upset(SEU) for radiationhardened PROMs were measured using a linear energy transfer(LET) ranging from 9.2 to 95.6 MeV cm^2mg^(-1).The result indicated that the LET threshold for a dynamic bit upset was ～ 9 MeV cm^2mg^(-1), which was lower than the threshold of ～ 20 MeV cm^2mg^(-1) for an address counter upset owing to the additional triple modular redundancy structure present in the latch. In addition, a slight hard error was observed in the anti-fuse structure when employing209 Bi ions with extremely high LET values(～ 91.6 MeV cm^2mg^(-1)) and large ion fluence(～ 1×10~8 ions cm^(-2)). To identify the detailed sensitive position of a SEU in PROMs, a pulsed laser with a 5-μm beam spot was used to scan the entire surface of the *** revealed that the upset occurred in the peripheral circuits of the internal power source and I/O pairs rather than in the internal latches and buffers. This was subsequently confirmed by a ^(181)Ta experiment. Based on the experimental data and a rectangular parallelepiped model of the sensitive volume, the space error rates for the used PROMs were calculated using the CRèME-96 prediction tool. The results showed that this type of PROM was suitable for specific space applications, even in the geosynchronous orbit.

关键词： Anti-fuse PROM Single event effects Heavy ions Pulsed laser Space error rate

Clinical trial of thalidomide combined with radiotherapy in patients with esophageal cancer

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World Journal of Gastroenterology 2014年第17期20卷 5098-5103页

作者： Jing-Ping Yu Su-Ping Sun Zhi-Qiang Sun Xin-Chu Ni Jian Wang Yi li li-Jun Hu dong-qing li Department of Radiation Oncology Changzhou Second People’s HospitalAffiliated to Nanjing Medical University

AIM: To investigate the short-term efficacy and tolerability of radiotherapy plus thalidomide in patients with esophageal cancer (EC).

关键词： Thalidomide Radiotherapy Esophageal cancer Vascular endothelial growth factor

Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

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Chinese Physics B 2020年第2期29卷 374-380页

作者： Bing Ye li-Hua Mo Tao liu Jie Luo dong-qing li Pei-Xiong Zhao Chang Cai Ze He You-Mei Sun Ming-dong Hou Jie liu Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China University of Chinese Academy of Sciences Beijing 100049China Science and Technology on Analog Integrated Circuit Laboratory Chongqing 400060China

Geant4 Monte Carlo simulation results of the single event upset(SEU)induced by protons with energy ranging from 0.3 MeV to 1 GeV are *** SEU cross section for planar and three-dimensional(3D)die-stacked SRAM are *** results show that the SEU cross sections of the planar device and the 3D device are different from each other under low energy proton direct ionization mechanism,but almost the same for the high energy ***,the multi-bit upset(MBU)ratio and pattern are presented and *** results indicate that the MBU ratio of the 3D die-stacked device is higher than that of the planar device,and the MBU patterns are more ***,the on-orbit upset rate for the 3D die-stacked device and the planar device are calculated by SPACE RADIATION *** calculation results indicate that no matter what the orbital parameters and shielding conditions are,the on-orbit upset rate of planar device is higher than that of 3D die-stacked device.

关键词： 3D-IC single event upset Geant4 proton

EPG Comparison of Sitobion avenae (Fab.) Feeding Behavior on Three Wheat Varieties

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Agricultural Sciences in China 2008年第2期7卷 180-186页

作者： HU Xiang-shun ZHAO Hui-yan HU Zu-qing li dong-hong ZHANG Yu-hong College of Plant Protection Northwest A＆F University Yangling 712100 P.R.China

This article was to study the potential resistance mechanism of three different wheat varieties （Ww2730, Xiaoyan 22 and Batis） in the seedling stage to Sitobion avenae. The aphid feeding behavior was ascertained by stylet penetration activities monitoring using the electrical penetration graph （EPG） technique. When the aphids feed on Ww2730 seedlings, the time for the 1st duration probing was later than that on Xiaoyan 22 and Batis significantly, and the number of interrupted probing before the 1st duration probing was more than that on Xiaoyan 22 and Batis significantly, and the 1st duration probing was shorter than that on Xiaoyan 22 and Batis significantly. The durations of the stylet pierce from the extra- to the intra-cellular （pd Ⅱ-1） on Ww2730 and Xiaoyan 22 were longer than those on Batis significantly. The duration of the potential drop （pd） in C wave on Ww2730 was longer than that on Xiaoyan 22 and Batis significantly. The times and duration of the G wave （ingestion in xylem） on Ww2730 were more and longer than those on Xiaoyan 22 and Batis significantly. The times of spot G wave on Batis was more than that on Ww2730 significantly, but the duration of spot G was shorter than that on Xiaoyan 22 and Ww2730 significantly. The total time of E1 wave, the longest duration of E1 fractions, and the mean duration time of E1 fractions that followed E2 wave on Xiaoyan 22 and Batis were all significantly longer than those on Ww2730. There was no difference of the mean duration of the 1st E1 wave on the 3 varieties, but the mean durations of other E1 wave on Ww2730 and Xiaoyan 22 were shorter than those on Batis significantly. The other wave parameters, including times and durations of F and E2 were all not different on the 3 wheat varieties. It is suggested that the resistance mechanism of wheat variety Ww2730 to S. avenae is a restriction factor of feeding in epidermis, the thicker cell wall in mesophyll, and secondary metabolites or nutrition unbalance in phloem in

关键词： wheat Sitobion avenae resistance mechanism electrical penetration graph (EPG) feeding behavior

Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM

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Chinese Physics B 2021年第3期30卷 394-401页

作者： li-Hua Mo Bing Ye Jie liu Jie Luo You-Mei Sun Chang Cai dong-qing li Pei-Xiong Zhao Ze He Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China University of Chinese Academy of Sciences Beijing 100049China

Three-dimensional integrated circuits(3D ICs)have entered into the mainstream due to their high performance,high integration,and low power *** used in atmospheric environments,3D ICs are irradiated inevitably by *** this paper,a 3D die-stacked SRAM device is constructed based on a real planar SRAM ***,the single event upsets(SEUs)caused by neutrons with different energies are studied by the Monte Carlo *** SEU cross-sections for each die and for the whole three-layer die-stacked SRAM device is obtained for neutrons with energy ranging from 1 MeV to 1000 *** results indicate that the variation trend of the SEU cross-section for every single die and for the entire die-stacked device is consistent,but the specific values are *** SEU cross-section is shown to be dependent on the threshold of linear energy transfer(LETth)and thickness of the sensitive volume(Tsv).The secondary particle distribution and energy deposition are analyzed,and the internal mechanism that is responsible for this difference is ***,the ratio and patterns of multiple bit upset(MBU)caused by neutrons with different energies are also *** work is helpful for the aerospace IC designers to understand the SEU mechanism of 3D ICs caused by neutrons irradiation.

关键词： neutron three-dimension ICs single event upset multi-bit upset Geant4

Everolimus in de novo liver transplant recipients: a systematic review

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Hepatobiliary & Pancreatic Diseases International 2015年第5期14卷 461-469页

作者： Cheng-Yong Tang Ai Shen Xu-Fu Wei qing-dong li Rui liu He-Jun Deng Yong-Zhong Wu Zhong-Jun Wu Department of Pharmacy First Affiliated Hospital of Chongqing Medical University Department of Hepatobiliary Surgery Chongqing Cancer Institute Department of Hepatobiliary Surgery First Affiliated Hospital of Chongqing Medical University Department of Radiotherapy Chongqing Cancer Institute

BACKGROUND： Everolimus has no nephrotoxicity and is used to treat patients with post-liver transplant chronic renal insufficiency. The present systematic review was to evaluate the efficacy and safety of everolimus in de novo liver transplant *** SOURCES： Randomized controlled trials comparing everolimus for de novo liver transplant in Pub Med, the Cochrane library, and Science Direct published up to March 31, 2014 were searched by two independent reviewers. Mean differences and 95% confidence interval（95% CI） for renal function, relative risk（RR） and 95% CI for treated biopsy-proven acute rejection（t BPAR）, graft loss, death, neoplasms/tumor recurrence, and adverse events were collected. Meta-analyses were performed with Rev Man version ***： A total of four randomized controlled trials covering 1119 cases were included. The meta-analyses revealed that compared with standard exposure of calcineurin inhibitors（CNIs）, everolimus combined with reduced CNIs improved creatinine clearance（calculated with the Cockcroft-Gault formula） by 5.13 m L/min at one year（95% CI： 0.42-9.84; P=0.03）, and decreased t BPAR（RR： 0.56; 95% CI： 0.35-0.90; P=0.02）. Everolimus initiation with CNIs elimination improved glomerular filtration rate（GFR, measured with the modification of diet in renal disease formula） of 10.42 m L/min/1.73 m2（95% CI： 3.44-17.41; P〈0.01） one year after treatment, but in-creased t BPAR（RR： 1.71; 95% CI： 1.15-2.53; P〈0.01）. Everolimus decreased the risk of neoplasms/tumor recurrence after liver transplant（RR： 0.60; 95% CI： 0.34-1.03; P=0.06）, but was associated with greater risk of adverse events which resulted in drug discontinuation（RR： 1.98; 95% CI： 1.49-2.64; P〈0.01）. CONCLUSIONS： Early introduction of everolimus combined with low-dose or no CNI in de novo liver transplant significantly improves renal function one year post treatment. Everolimus combined with low-dose CNI decreases the risk of t BPAR one year after liver transplant, but everoli

关键词： everolimus calcineurin inhibitors liver transplantation systematic review

Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology

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Chinese Physics B 2022年第5期31卷 527-534页

作者： dong-qing li Tian-Qi liu Pei-Xiong Zhao Zhen-Yu Wu Tie-Shan Wang Jie liu Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China University of Chinese Academy of Sciences Beijing 100049China School of Physical Science and Technology Lanzhou UniversityLanzhou 730000China National University of Defense Technology Changsha 410000China Tsinghua University Beijing 100084China

Three-dimensional(3 D)TCAD simulations demonstrate that reducing the distance between the well boundary and N-channel metal-oxide semiconductor(NMOS)transistor or P-channel metal-oxide semiconductor(PMOS)transistor can mitigate the cross section of single event upset(SEU)in 14-nm complementary metal-oxide semiconductor(CMOS)bulk Fin FET *** competition of charge collection between well boundary and sensitive nodes,the enhanced restoring currents and the change of bipolar effect are responsible for the decrease of SEU cross *** dualinterlock cell(DICE)design,this approach is more effective under heavy ion irradiation of higher LET,in the presence of enough taps to ensure the rapid recovery of well ***,the feasibility of this method and its effectiveness with feature size scaling down are discussed.

关键词： TCAD simulation FinFET single event upset(SEU)mitigation