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Unravelling the anisotropic light-matter interaction in strainengineered trihalide MoCl_(3)

Nano Research 2024年第4期17卷 2981-2987页

作者： Yuxuan Sun Ziang Liu Zeya Li Feng Qin Junwei Huang caiyu qiu Hongtao Yuan National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional MaterialsCollege of Engineering and Applied Sciencesand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210000China

Layered trihalides exhibit distinctive band structures and physical properties due to the sixfold coordinated 3d or 4d transition metal site and partially occupied d orbitals,holding great potential in condensed matter physics and advanced electronic *** research focused on trihalides with highly symmetric honeycomb-like structures,such as CrI3 andα-RuCl_(3),while the role of crystal anisotropy in trihalides remains *** particular,the trihalide MoCl_(3) manifests strong in-plane crystal anisotropy with the largest difference in Mo–Mo interatomic *** on such material is imperative to address the lack of investigations on the effect of anisotropy on the properties of ***,we demonstrated the anisotropy of MoCl_(3) through polarized Raman spectroscopy and further tuned the phonon frequency via strain *** showed the Raman intensity exhibits twofold symmetry under parallel configuration and fourfold symmetry under perpendicular configuration with changing the polarization angle of incident ***,we found that the phonon frequencies of MoCl_(3) decrease gradually and linearly with applying uniaxial tensile strain along the axis of symmetry in the MoCl_(3) crystal,while those frequencies increase with uniaxial tensile strain applied *** results shed light on the manipulation of anisotropic light-matter interactions via strain engineering,and lay a foundation for further exploration of the anisotropy of trihalides and the modulation of their electronic,optical,and magnetic properties.

关键词： layered trihalide MoCl_(3) polarized Raman spectroscopy strain engineering anisotropy

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Gate-tunable Berry curvature in van der Waals itinerant ferromagnetic Cr_(7)Te_(8)

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InfoMat 2024年第3期6卷 108-116页

作者： Kui Meng Zeya Li Zhansheng Gao Xiangyu Bi Peng Chen Feng Qin caiyu qiu Lingyun Xu Junwei Huang Jinxiong Wu Feng Luo Hongtao Yuan National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced MicrostructuresCollege of Engineering and Applied SciencesJiangsu Key Laboratory of Artificial Functional MaterialsNanjing UniversityNanjingthe People's Republic of China Center for the Physics of Low-Dimensional Materials Henan Joint International Research Laboratory of New Energy Materials and DevicesSchool of Physics and ElectronicsHenan UniversityKaifengthe People's Republic of China Tianjin Key Lab for Rare Earth Materials and Applications Center for Rare Earth and Inorganic Functional MaterialsSmart Sensor Interdisciplinary Science CenterSchool of Materials Science and EngineeringNankai UniversityTianjinthe People's Republic of China

The anomalous Hall effect(AHE)that associated with the Berry curvature of occupied electronic states in momentum-space is one of the intriguing aspects in condensed matter physics,and provides an alternative for potential applications in topological *** experiments reported the tunable Berry curvature and the resulting magnetization switching process in the AHE based on strain engineering or chemical ***,the AHE modulation by these strategies are usually irreversible,making it difficult to realize switchable control of the AHE and the resultant spintronic ***,we demonstrated the switchable control of the Berry-curvature-related AHE by electrical gating in itinerant ferromagnetic Cr_(7)Te_(8)with excellent ambient *** gate-tunable sign reversal of the AHE can be attributed to the redistribution of the Berry curvature in the band structure of Cr_(7)Te_(8)due to the intercalation-induced change in the Fermi *** work facilitates the applications of magnetic switchable devices based on gate-tunable Berry curvature.

关键词： anomalous Hall effect Berry curvature van der Waals itinerant ferromagnetism

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Gate Tunable Labyrinth Domain Structures in a van der Waals Itinerant Ferromagnet Cr_(7)Te_(8)

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Chinese Physics Letters 2024年第9期41卷 122-132页

作者： Kui Meng Zeya Li Yicheng Shen Xiangyu Bi Junhao Rao Yuting Qian Zhansheng Gao Peng Chen caiyu qiu Feng Qin Jinxiong Wu Feng Luo Junwei Huang Hongtao Yuan National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional MaterialsCollege of Engineering and Applied Sciencesand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210000China Center for the Physics of Low-Dimensional Materials Henan Joint International Research Laboratory of New Energy Materials and DevicesSchool of Physics and ElectronicsHenan UniversityKaifeng 475004China Tianjin Key Lab for Rare Earth Materials and Applications Center for Rare Earth and Inorganic Functional MaterialsSmart Sensor Interdisciplinary Science CenterSchool of Materials Science and EngineeringNankai UniversityTianjin 300350China

Manipulating magnetic domain structure plays a key role in advanced spintronics *** rationale is that the labyrinthine domain structure,normally appearing in ferromagnetic thin films with strong magnetic anisotropy,shows a great potential to increase data storage density for designing magnetic nonvolatile memory and logic ***,an electrical control of labyrinthine domain structure remains ***,we demonstrate the gate-driven evolution of labyrinthine domain structures in an itinerant ferromagnet Cr_(7)Te_(8).By combining electric transport measurements and micromagnetic finite difference simulations,we find that the hysteresis loop of anomalous Hall effect in Cr_(7)Te_(8)samples shows distinct features corresponding to the generation of labyrinthine domain *** labyrinthine domain structures are found to be electrically tunable via Li-electrolyte gating,and such gate-driven evolution in Cr_(7)Te_(8)originates from the reduction of the magnetic anisotropic energy with gating,revealed by our micromagnetic *** results on the gate control of anomalous Hall effect in an itinerant magnetic material provide an opportunity to understand the formation and evolution of labyrinthine domain structures,paving a new route towards electric-field driven spintronics.

关键词： rational electrolyte ferromagnetic

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Studies on the properties of surface and edges of N-layer graphenes

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Science China(Physics,Mechanics & Astronomy) 2011年第10期54卷 1729-1738页

作者： CHEN MinJiang ZHOU HaiQing qiu caiyu YANG HuaiChao YU Fang SUN LianFeng National Center for Nanoscience and Technology Beijing 100190 China Graduate University of Chinese Academy of Sciences Beijing 100049 China Tsinghua University Beijing 100084 China peking University Beijing 100871 China

Graphene, a new two-dimensional carbon material, is a rising star of physics, chemistry and materials science. In this work, we report the recent experimental researches on the Raman spectra and the temperature-dependent features of graphenes and car- bon nanoscrolls, which are evolved from graphene and have an open tubular structure. The layer-dependent Raman enhancing characteristics of n-layer graphenes for crystal violet, and the thickness-dependent morphologies of gold on n-layer graphenes are also systematically investigated. Meanwhile, the aggregations of ferromagnetic and paramagnetic atoms at edges of gra- phenes and graphite are observed and the mechanisms are discussed.

关键词： N-layer graphene Raman spectroscopy edge ferromagnetism

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Electrical field tuning of magneto-Raman scattering in monolayer graphene

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Nano Research 2015年第4期8卷 1139-1147页

作者： Xiaonan Shen caiyu qiu Bingchen Cao Chunxiao Cong Weihuang Yang Haomin Wang Ting Yu Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 637371 Singapore Singapore Wenzhou Institute of Biomaterials and Engineering Wenzhou 325001 China Department of Physics Faculty of Science National University of Singapore 117542 Singapore Singapore Graphene Research Center Faculty of Science National University of Singapore 117546 Singapore Singapore

In this work, we report the electrical field tuning of magneto-phonon resonance in monolayer graphene under magnetic fields up to 9 T. It is found that the carrier concentration can drastically affect the G （E2g） phonon response to a varying magnetic field through a pronounced magneto-phonon resonance （MPR）. In charge neutral or slightly doped monolayer graphene, both the energy and the line width of the E2g phonon show clear variation with magnetic fields. This is attributed to magneto-phonon resonance between magnetoexcitations and the E2g phonons. In contrast, when the Fermi level of the monolayer graphene is far away from the Dirac point, the G band shows weak magnetic dependence and exhibits a symmetric line-shape. This suggests that the magneto-phonon coupling around 4 T has been switched off due to the Pauli blocking of the inter-Landau level excitations. Moreover, the G band asymmetry caused by Fano resonance between excitonic many-body states and the E2g phonons is observed. This work offers a way to study the magnetoexcitation phonon interaction of materials through magneto-Raman spectroscopy with an external electrical field.

关键词： monolayer graphene magneto-phononresonance Raman electrical field suspended graphene

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施肥对热带砖红壤胶林土壤水分特征曲线的影响及模型优选

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水土保持研究 2024年第1期31卷 105-116页

作者：林晓燕王晶晶吴炳孙宁松瑞王紫璇邱偲雨吴耀华海南大学热带农林学院海口570228 海南五指山森林生态系统国家定位观测研究站海南五指山572299 中国热带农业科学院橡胶研究所海口571101 西安理工大学省部共建西北旱区生态水利国家重点实验室西安710048

[目的]探明热带橡胶林施肥措施对土壤持水能力及孔隙特征的影响,并优选描述砖红壤胶林土壤水分特征曲线的模拟模型。[方法]采用沙箱排水法结合压力膜仪法测定砖红壤橡胶林5种施肥处理(有机肥混施化肥(H)、施化肥(C)、种植绿肥(G)、施专... 详细信息

[目的]探明热带橡胶林施肥措施对土壤持水能力及孔隙特征的影响,并优选描述砖红壤胶林土壤水分特征曲线的模拟模型。[方法]采用沙箱排水法结合压力膜仪法测定砖红壤橡胶林5种施肥处理(有机肥混施化肥(H)、施化肥(C)、种植绿肥(G)、施专用肥(S)及不施肥(CK))的全吸力段土壤水分特征曲线,应用Brooks-Corey(BC)、van Genuchten(VG)、Gardner和Log-Normal Distribution(LND)4种经验模型拟合,分析了不同模型的适用性及拟合精度。[结果]0—5 cm土层,在低吸力段(pF≤3.01)C处理降幅最大(0.44 cm^(3)/cm^(3));在高吸力阶段(3.01

关键词：土壤有效含水率吸湿水沙箱排水法比水容量土壤孔隙分布持水能力

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Gate-tunable spin valve effect in Fe_(3)GeTe_(2)-based van der Waals heterostructures

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InfoMat 2023年第3期5卷 1-10页

作者： Ling Zhou Junwei Huang Ming Tang caiyu qiu Feng Qin Caorong Zhang Zeya Li Di Wu Hongtao Yuan National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional MaterialsCollege of Engineering and Applied Sciencesand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjingthe People's Republic of China

Magnetic tunnel junctions(MTJs),a prominent type of spintronic device based on the spin valve effect,have facilitated the development of numerous spintronic *** technical appeal for the next-generation MTJ devices has been proposed in two directions:improving device performance by utilizing advanced two-dimensional(2D)ferromagnetic materials or extending device functionalities by exploring the gate-tunable magnetic properties of *** on the recent development of 2D magnets with the ease of external stimuli,such as electric field,due to their reduced dimensions,reliable prospects for gate-tunable MTJ devices can be achieved,shedding light on the great potential of next-generation MTJs with multiple functionalities for various application *** the electrical gate-tunable MTJ device is highly desirable for practical spintronic devices,it has not yet been ***,we demonstrate the experimental realization of a spin valve device by combining a vertical Fe_(3)GeTe_(2)/h-BN/Fe_(3)GeTe_(2) MTJ with an electrolyte *** magnetoresistance ratio(MR ratio)of 36%for the intrinsic MTJ confirms the good performance of the *** electrolyte gating,the tunneling MR ratio of Fe_(3)GeTe_(2)/h-BN/Fe_(3)GeTe_(2) MTJ can be elevated 2.5 times,from 26%to 65%.Importantly,the magnetic fields at which the magnetoresistance switches for the MTJ can be modulated by electrical gating,providing a promising method to control the magnetization configuration of the *** work demonstrates a gate-tunable MTJ device toward the possibility for gate-controlled spintronic devices,paving the way for performing 2D magnetism manipulations and exploring innovative spintronic applications.

关键词： Fe_(3)GeTe_(2)magnetic tunnel junction magnetoresistance spin valve van der Waals heterostructure

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Strain engineering of anisotropic light-matter interactions in onedimensional P-P chain of SiP_(2)

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Nano Research 2022年第8期15卷 7378-7383页

作者： Fanghua Cheng Junwei Huang Feng Qin Ling Zhou Xueting Dai Xiangyu Bi Caorong Zhang Zeya Li Ming Tang caiyu qiu Yangfan Lu Huiyang Gou Hongtao Yuan National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials College of Engineering and Applied SciencesNanjing UniversityNanjing 210000China College of Materials Science and Engineering National Engineering Research Center for Magnesium AlloysChongqing UniversityChongqing 400030China Center for High Pressure Science and Technology Advanced Research Beijing 100094China

Strain engineering can serve as a powerful technique for modulating the exotic properties arising from the atomic structure of *** have been demonstrated that one-dimensional(1D)structure can serve as a great platform for modulating electronic band structure and phonon dispersion via strain ***,in a van der Waals material silicon diphosphide(SiP_(2)),quasi-1D zigzag phosphorus–phosphorus(P–P)chains are embedded inside the crystal structure,and can show unique phonon vibration modes and realize quasi-1D *** those optical properties by the atom displacements via strain engineering is of great interest in understanding underlying mechanism of such P–P chains,however,which remains ***,we demonstrate the strain engineering of Raman and photoluminescence(PL)spectra in quasi-1D P–P chains and resulting in anisotropic manipulation in SiP_(2).We find that the phonon frequencies of SiP_(2)in Raman spectra linearly evolve with a uniaxial strain along/perpendicular to the quasi-1D P–P chain ***,by applying tensile strain along the P–P chains,the band gap energy of strained SiP_(2)can significantly decrease with a tunable value of~55 *** on arsenic(As)element doping into SiP_(2),the strain-induced redshifts of phonon frequencies decrease,indicating the stiffening of the phonon vibration with the increased arsenic doping *** results provide an opportunity for strain engineering of the light–matter interactions in the quasi-1D P–P chains of SiP_(2)crystal for potential optical applications.

关键词： strain engineering silicon diphosphide Raman photoluminescence

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Selective substitution induced anomalous phonon stiffening within quasi-one-dimensional P–P chains in SiP2

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Nano Research 2023年第1期16卷 1107-1114页

作者： Xueting Dai Feng Qin caiyu qiu Ling Zhou Junwei Huang Fanghua Cheng Xiangyu Bi Caorong Zhang Zeya Li Ming Tang Shengqiang Wu Xiaoxu Zhao Yangfan Lu Huiyang Gou Hongtao Yuan National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional MaterialsCollege of Engineering and Applied Sciencesand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210000China School of Materials Science and Engineering Peking UniversityBeijing 100871China College of Materials Science and Engineering National Engineering Research Center for Magnesium AlloysChongqing UniversityChongqing 400030China Center for High Pressure Science and Technology Advanced Research Beijing 100094China

Light-matter interactions in low-dimensional quantum-confined structures can dominate the optical properties of the materials and lead to optoelectronic *** anisotropic layered silicon diphosphide(SiP2)crystal,the embedded quasi-onedimensional(1D)phosphorus–phosphorus(P–P)chains directly result in an unconventional quasi-1D excitonic state,and a special phonon mode vibrating along the P–P chains,establishing a unique 1D quantum-confined *** SiP2 with the homologous element serves as an effective way to study the properties of these excitons and phonons associated with the quasi-1D P–P chains,as well as the strong interaction between these ***,the experimental observation and the related optical spectral understanding of SiP2 with isoelectronic dopants remain ***,with the photoluminescence and Raman spectroscopy measurements,we demonstrate the redshift of the confined excitonic peak and the stiffening of the phonon vibration mode■of a series of Si(P1−xAsx)2 alloys with increasing arsenic(As)*** anomalous stiffening of■is attributed to the selective substitution of As atoms for P atoms within the P–P chains,which is confirmed via our scanning transmission electron microscopy *** optical spectra evolutions with selective substitution pave a new way to understand the 1D quantum confinement in semiconductors,offering opportunities to explore quasi-1D characteristics in SiP2 and the resulting photonic device application.

关键词： SiP2 quasi-one-dimensional structure Raman photoluminescence phosphide

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Thickness-dependent patterning of MoS2 sheets with well-oriented triangular pits by heating in air

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Nano Research 2013年第10期6卷 703-711页

作者： Haiqing Zhou Fang Yu Yuanyue Liu Xiaolong Zou Chunxiao Cong caiyu qiu Ting Yu Zheng Yan Xiaonan Shen Lianfeng Sun Boris I. Yakobson James M. Tour Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 637371Singapore Department of Chemistry Rice University 6100 Main Street Houston Texas 77005 USA The Smalley Institute for Nanoscale Science and Technology Rice University 6100 Main Street Houston Texas 77005 USA Department of Mechanical Engineering and Materials Science Rice University 6100 Main Street Houston Texas 77005 USA National Center for Nanoscience and Technology Beijing 100190 China

Patterning ultrathin MoS2 layers with regular edges or controllable shapes is appealing since the properties of MoS2 sheets are sensitive to the edge structures. In this work, we have introduced a simple, effective and well-controlled technique to etch layered MoS2 sheets with well-oriented equilateral triangular pits by simply heating the samples in air. The anisotropic oxidative etching is greatly affected by the surrounding temperature and the number of MoS2 layers, whereby the pit sizes increase with the increase of surrounding temperature and the number of MoS2 layers. First-principles computations have been performed to explain the formation mechanism of the triangular pits. This technique offers an alternative avenue to engineering the structure of MoS2 sheets.

关键词： layered MoS2 oxidative etching thickness-dependent triangular pits

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