检索结果-南通市图书馆

Unprecedented differences in the diamond nucleation density between carbon-and silicon-faces of 4H-silicon carbides

Chinese Chemical Letters 2020年第7期31卷 2013-2018页

作者： Bo Wang pitsiri sukkaew Guichen Song Andreas Rosenkranz Yunxiang Lu Kazhihito Nishimura Jia Wang Jilei Lyu Yang Cao Jian Yi Lars Ojamae He Li Nanjiang Key Laboratory of Marine New Materials and Related Technology Zhejiang Key Laboratory of Marine Materials and Protection TechnologyNingbo Institute of Material Technology&EngineeringChinese Academy of SciencesNingbo 315201China Department of Physics Chemistryand BiologyLinkoping UniversitySE-58183 LinkopingSweden Department of Chemical Engineering Biotechnology and MaterialsUniversidad de ChileAvenida Beauchef 851SantiagoChile Mechanical Systems Engineering Kogakuin UniversityTokyo 192-0015Japan Department of Mechanical and Materials Engineering University of Nebraska-LincolnLincolnNE 68588United State

4H-silicon carbides deposited by diamond films have wide applications in many fields such as semiconductor heterojunction,heat sink and mechanical *** plays a critical role in the deposition of the diamond film on 4H-silicon ***,as a typical polar material,the fundamental mechanism of diamond nucleation on different faces of 4H-silicon carbides has not been fully understood *** this contribution,nucleation of diamond was performed on the carbon-and silicon-faces of 4H-silicon carbides in a direct current chemical vapor deposition *** nucleation density on the carbon-face is higher by 2-3 orders of magnitude compared to the *** electron microscopy verifies that there are high density diamond nuclei on the interface between the carbon-face and the diamond film,which is different from columnar diamond growth structure on the *** state theory calculation reveals that the unprecedented distinction of the nucleation density between the carbon-face and the silicon-face is attributed to different desorption rates of the absorbed hydrocarbon *** addition,kinetic model simulations demonstrate that it is more difficult to form CH2(s)-CH2(s)dimers on silicon-faces than carbon-faces,resulting in much lower nucleation densities on silicon-faces.

关键词： 4H-silicon carbide Diamond nucleation mechanism Transmission electron microscopy Transition state theory Kinetic model simulation

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：