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Science China Chemistry 2016年第6期59卷 707-712页

作者： Na Liu Jia Zhang Yunfeng Qiu Jie Yang pingan hu School of Chemical Engineering and Technology Harbin Institute of TechnologyHarbin 150001China Key Laboratory of Micro-systems and Micro-structures Manufacturing Ministry of EducationHarbin Institute of TechnologyHarbin 150080China

Graphene on dielectric substrates is essential for its electronic applications. Graphene is typically synthesized on the surface of metal and then transferred to an appropriate substrate for fabricating device applications. This post growth transfer process is detrimental to the quality and performance of the as-grown graphene. Therefore, direct growth of graphene films on dielectric substrates without any transfer process is highly desirable. However, fast growth of graphene on dielectric substrates remains challenging. Here, we demonstrate a transfer-free chemical vapor deposition (CVD) method to directly grow graphene films on dielectric substrates at fast growth rate using Cu as floating catalyst. A large area (centimeter level) graphene can be grown within 15 min using this CVD method, which is increased by 500 times compared to other direct CVD growth on dielectric substrate in the literatures. This research presents a significant progress in transfer-free growth of graphene and graphene device applications.

关键词： graphene fast growth dielectric substrates

Atomically thin InSe:A high mobility two-dimensional material

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Science China(Technological Sciences) 2017年第7期60卷 1121-1122页

作者： FENG Wei ZHENG Wei GAO Feng hu pingan Key Lab of Microsystem and Microstructure Harbin Institute of TechnologyHarbin 150080China School of Materials Science and Engineering Harbin Institute of TechnologyHarbin 150080China

Since silicon is limited by its physical properties,it is challenging and important to find candidate materials for high performance electronic ***-dimensional（2D）semiconductor materials have attracted dramatically ... 详细信息

关键词： challenging promise candidate dramatically outperform compatible phosphorus fabrication extremely attributed

Recent advances in preparation,properties and device applications of twodimensional h-BN and its vertical heterostructures

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Journal of Semiconductors 2017年第3期38卷 25-43页

作者： huihui Yang Feng Gao Mingjin Dai Dechang Jia Yu Zhou pingan hu Institute for Advanced Ceramics Harbin Institute of Technology Harbin 150001 China Key Lab of Microsystem and Microstructure Harbin Institute of Technology Harbin 150080 China School of Materials and Science Engineering Harbin Institute of Technology Harbin 150080 China

Two-dimensional（2D） layered materials,such as graphene,hexagonal boron nitride（h-BN）,molybdenum disulfide（Mo S_2/,have attracted tremendous interest due to their atom-thickness structures and excellent physical properties.h-BN has predominant advantages as the dielectric substrate in FET devices due to its outstanding properties such as chemically inert surface,being free of dangling bonds and surface charge traps,especially the large-band-gap insulativity.h-BN involved vertical heterostructures have been widely exploited during the past few *** heterostructures adopting h-BN as dielectric layers exhibit enhanced electronic performance,and provide further possibilities for device ***,a series of intriguing physical phenomena are observed in certain vertical heterostructures,such as superlattice potential induced replication of Dirac points,band gap tuning,Hofstadter butterfly states,gate-dependent pseudospin *** we focus on the rapid developments of h-BN synthesis and fabrication of vertical heterostructures devices based on h-BN,and review the novel properties as well as the potential applications of the heterostructures composed of h-BN.

关键词： h-BN heterostructures graphene van der Waals epitaxy FETs

Highly sensitive phototransistors based on twodimensional GaTe nanosheets with direct bandgap

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Nano Research 2014年第5期7卷 694-703页

作者： pingan hu Jia Zhang Mina Yoon Xiao-Fen Qiao Xin Zhang Wei Feng Pingheng Tan Wei Zheng Jingjing Liu Xiaona Wang Juan C. Idrobo David B. Geohegan Kai Xiao Key Lab of Microsystem and Microstructure Harbin Institute of Technology Ministry of Education No. 2 Yikuang Street Harbin 150080 China Center for Nanophase Materials Sciences Oak Ridge National Laboratory One Bethel Valley Road Oak Ridge TN 37831 USA State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

Highly sensitive phototransistors based on two-dimensional （2D） GaTe nanosheet have been demonstrated. The performance （photoresponsivity, detectivity） of the GaTe nanosheet phototransistor can be efficiently adjusted by using the applied gate voltage. The devices exhibit an ultrahigh photoresponsivity of 274.3 AW^-1. The detectivity of 2D GaTe devices is -10^12 Jones, which surpasses that of currently-exploited InGaAs photodetectors （10^11-10^12 Jones）. To reveal the origin of the enhanced photocurrent in GaTe nanosheets, theoretical modeling of the electronic structures was performed to show that GaTe nanosheets also have a direct bandgap structure, which contributes to the promotion of photon absorption and generation of excitons. This work shows that GaTe nanosheets are promising materials for high performance photodetectors.

关键词： photodetector gallium telluride two-dimensional semiconductor nanosheet

Growth and Optoelectronics of Two dimensional Materials

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Growth and Optoelectronics of Two dimensional Materials

Two-Dimensional Layered Crystals: Growth, Electronics and Optoelectronics

中国化学会第29届学术年会

作者： pingan hu Wei Feng Jia Zhang Wei Zheng Xiaona Wang Research Centre for Micro/nanotechnology harbin institute of technology ministry of education

＜正＞Two dimensional nanomaterials such as graphene and layered inorganic materials are promising for future nanoscale electronics and *** doped graphene films which are prepared by high temperature CVD,we report a low-temperature method toward synthesis of large area heavily heteroatom doped graphene on copper foils via a free radical reaction using polyhalogenated aromatic *** low temperature method allows the synthesis of single layer NG film with

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Two-Dimensional Layered Crystals: Growth, Electronics and Op...

Low temperature growth of clean single layer hexagonal boron nitride flakes and film for graphenebased field-effect transistors

中国化学会第九届全国无机化学学术会议

作者： pingan hu Wei Feng Jia Zhang Wei Zheng Xiaona Wang Research Centre for Micro/nanotechnology Harbin Institute of Technology

Two dimensional crystals such as graphene and layered inorganic materials are promising for future nanoscale electronics and optics. We report a low-temperature method toward synthesis of large area heavily heteroatom doped graphene on copper foils via a free radical reaction using polyhalogenated aromatic compounds. This low temperature method allows the synthesis of single layer nitrogen doped graphene film with high nitrogen content,and the production of large area sulfur doped film for the first time. We also studied impact of dielectric layer and metal contacts on the performance of 2D layered materials based devices（shown in Fi.g 1）. And we discover that carrier scattering from chemical impurities of hydroxyl groups and absorbed water molecules at oxidized dielectric plays a central role in determining the mobilities of 2D layered semiconductors based FETs, and suppression of this carrier scatter can significantly enhance the performance of 2D layered semiconductor devices.

关键词： Graphene two-dimensional crystals growth electrical properties

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Science China Materials 2019年第8期62卷 1218-1225页

作者： Lifeng Wang Bin Wu Hongtao Liu Hanlin Wang Yuyu Su Weiwei Lei pingan hu Yunqi Liu Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China Key Lab of Microsystem and Microstructure Ministry of Education Harbin Institute of Technology Harbin 150080 China Institute for Frontier Materials Deakin University Waum Ponds Victoria 3216 Australia

Two dimensional (2D) materials have attracted intense attention owing to their unique physical and chemical properties and the realization of artificial structure and functionality [1]. Insulating hexagonal boron nitride (h-BN), a one-atom thick crystal with a large bandgap (6 eV)[2], superior chemical and thermal stability, and a higher thermal conductivity, is known as “white graphene” due to their similar structure.a lattice mismatch of only 1.6%.

关键词：六方氮化硼场效应晶体管低温制备石墨烯等离子体化学气相沉积法质量晶畴薄膜

较高浓度神经肽Y抑制人脂肪干细胞增殖并促进其分化

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细胞与分子免疫学杂志 2016年第2期32卷 185-190页

作者：吴尉胡平安梁芳宋小琴刘敏中南大学湘雅医学院附属肿瘤医院老干头颈内科湖南长沙410013 中南大学湘雅三医院内分泌科湖南长沙410013 中南大学湘雅三医院营养科湖南长沙410013

目的研究不同浓度神经肽Y(NPY)对人脂肪干细胞(h ADSC)增殖及分化的影响。方法分离h ADSC,用(10^(-6)~10^(-15))mol/L NPY诱导刺激h ADSC,MTT法检测其增殖;分别用完全培养基、NPY和胰岛素处理h ADSC,油红O染色观察h ADSC的分化;Western ... 详细信息

目的研究不同浓度神经肽Y(NPY)对人脂肪干细胞(h ADSC)增殖及分化的影响。方法分离h ADSC,用(10^(-6)~10^(-15))mol/L NPY诱导刺激h ADSC,MTT法检测其增殖;分别用完全培养基、NPY和胰岛素处理h ADSC,油红O染色观察h ADSC的分化;Western blot法检测各组过氧化物酶体增殖物激活受体γ(PPARγ)、CCAAT增强子结合蛋白α(C/EBPα)、诱导细胞死亡的d FF45样效应因子C(Cidec)和受体相互作用蛋白140(RIP140)的表达水平。结果 (10^(-11)~10^(-15))mol/L NPY促进h ADSC增殖,(10^(-6)~10^(-10))mol/L NPY抑制h ADSC增殖;(10^(-7)、10^(-9)、10^(-11))mol/L NPY均诱导h ADSC分化,并增加PPARγ、C/EBPα蛋白表达,同时促进白色脂肪组织特异性标志Cidec、RIP140蛋白的表达。结论较低浓度NPY促进h ADSC增殖,较高浓度NPY抑制h ADSC增殖并促进其分化。

关键词：神经肽Y 人脂肪干细胞过氧化物酶体增殖物激活受体γ CCAAT增强子结合蛋白α 诱导细胞死亡的DFF45样效应因子C 受体相互作用蛋白140

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石墨烯基二维垂直异质结的制备及光电子器件

材料科学与工艺 2017年第3期25卷 1-12页

作者：戴明金高峰杨慧慧胡云霞胡平安微系统与微结构制造教育部重点实验室(哈尔滨工业大学) 哈尔滨150080 哈尔滨工业大学材料科学与工程学院哈尔滨150080

石墨烯和类石墨烯二维半导体材料因其独特的物理化学性质受到研究人员的广泛关注,将二者结合组成的石墨烯基二维垂直异质结近年来备受研究者的青睐.本文简要介绍了石墨烯基二维垂直异质结的基本概念和性质,综述了石墨烯基二维垂直异质... 详细信息

石墨烯和类石墨烯二维半导体材料因其独特的物理化学性质受到研究人员的广泛关注,将二者结合组成的石墨烯基二维垂直异质结近年来备受研究者的青睐.本文简要介绍了石墨烯基二维垂直异质结的基本概念和性质,综述了石墨烯基二维垂直异质结制备技术的最新进展情况,对比分析了不同制备方法各自的优缺点,总结了石墨烯基二维垂直异质结在光电子学器件应用的最新进展.最后对石墨烯基二维垂直异质结的研究和发展方向做了展望.

关键词：石墨烯二维材料异质结光电子

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新形势下临床实践教育面临的困境分析及对策

卫生职业教育 2007年第10期25卷 25-26页

作者：黄谷香胡平安中南大学湘雅二医院湖南长沙410011 中南大学湘雅三医院湖南长沙410011

临床实践教育是医学教育的重要组成部分，对培养医学生的临床思维和创新能力起着重要作用。现就临床实践教育存在的问题及改革的目的、措施进行阐述，提出临床实践教育改革是帮助医学生将理论知识应用于临床实践，培养分析问题、解决问... 详细信息

临床实践教育是医学教育的重要组成部分，对培养医学生的临床思维和创新能力起着重要作用。现就临床实践教育存在的问题及改革的目的、措施进行阐述，提出临床实践教育改革是帮助医学生将理论知识应用于临床实践，培养分析问题、解决问题的能力，为以后的工作奠定坚实基础的重要环节。

关键词：临床实践教育困境对策