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Genetic Correlation between Agronomically Important Traits in Yellow Passion Fruit

American Journal of Plant Sciences 2013年第11期4卷 2112-2117页

作者： Leonarda Grillo Neves Claudio Horst Bruckner Marcelo Coutinho Picanco Severino de Paiva Sobrinho Kelly Lana Araújo petterson baptista da luz Marco Antonio Aparecido Barelli Willian Krause Laboratóriode Melhoramento Genético Vegetal Universidade do Estado de Mato GrossoCáceresBrasil Departamento de Fitotecnia Universidade Federal de VicosaVicosaBrasil Departamento de Entomologia Universidade Federal de VicosaVicosaBrasil Departamento de Agronomia Universidade do Estado de Mato GrossoCáceresBrasil

Breeding programs have sought to determine the minimum period of genotype evaluation, which is a long term-process. The objective of this work was to determine the association between qualitative traits of yellow passion fruit (Passiflora edulis Sims) and relate maturity to other characteristics. To carry out this work, 113 families of full-sibs and half-sibs were planted in Viçosa (MG), Brazil, in a randomized block experimental design arranged in sets (treatment groups). The association between the analyzed characteristics was studied using path analysis and canonical correlation techniques. It was found that lower-yielding but larger-fruit bearing genotypes of passion fruit plant also require more days until reaching anthesis. Round-shaped fruits are linked to higher contents of total soluble solids. More intense pulp color also indicates higher contents of total soluble solids. The riper the fruit, the more intensely orange is the color of the pulp. The ratio between the levels of total soluble solids and total titrimetric acidity was the main determinant of pulp color for passion fruit.

关键词： Canonical Correlation Passiflora edulis Path Correlation

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Genetic Divergence in Mango and Obtaining Minimum Efficient Descriptors

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American Journal of Plant Sciences 2013年第12期4卷 2318-2322页

作者： Sandra da Costa Preisigke Adryellison Lemes de Campos Nadsley Seraglio Souza Leonarda Grillo Neves Marco Antonio Aparecido Barelli petterson baptista da luz Kelly Lana Araújo Severino de Paiva Sobrinho Agronomy Department Mato Grosso State University Cáceres Brazil Plant Breeding Department Mato Grosso State University Cáceres Brazil

Mangifera indica (mango) is a typically tropical fruit with considerable economic value. Brazil features a wide variety of cultivars of this fruit, most of which are known under several different names. Indeed, the nomenclature of mango varieties is still quite confusing. Up to now there has been no well-defined scientific principle to differentiate them. The objective of the present work is to compare the different clustering methods in assessing genetic divergence among mango accessions, as well as identify the minimum efficient descriptors for that crop. A total of 20 mango accessions in Cáceres, Mato Grosso state, Brazil were evaluated. When building dissimilarity matrices, the descriptors were divided according to the following groups: leaf, flower/inflorescence, fruit, seed and growth habit/ripening period. With these divisions, combinations were performed among the groups of descriptors. The similarity index was used to obtain the dissimilarity matrices. Later, the accessions were clustered using the methods of Tocher, Ward and UPGMA. The study observed that it was possible to reduce the number of descriptors from 64 to 35, and that the clustering methods were compatible with the study of the genetic diversity of mango.

关键词： Mango Multicategorical Variables Morphological Descriptors

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Impact of device resistances in the performance of graphene‑based terahertz photodetectors

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Frontiers of Optoelectronics 2024年第2期17卷 87-97页

作者： O.Castelló Sofía M.López baptista K.Watanabe T.Taniguchi E.Diez J.E.Velázquez-Pérez Y.M.Meziani J.M.Caridad J.A.Delgado-Notario Department of Applied Physics University of Salamanca37008 SalamancaSpain Unidad de Excelencia en luz y Materia Estructurada(LUMES) University of Salamanca37008 SalamancaSpain Research Center for Electronic and Optical Materials National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan Research Center for Materials Nanoarchitectonics National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan Nanotechnology Group USAL-NanolabUniversity of Salamanca37008 SalamancaSpain

In recent years,graphene field-effect-transistors(GFETs)have demonstrated an outstanding potential for terahertz(THz)photodetection due to their fast response and *** features are essential to enable emerging THz applications,including 6G wireless communications,quantum information,bioimaging and ***,the overall performance of these photodetectors may be utterly compromised by the impact of internal resistances presented in the device,so-called access or parasitic *** this work,we provide a detailed study of the influence of internal device resistances in the photoresponse of high-mobility dual-gate GFET *** dual-gate architectures allow us to fine tune(decrease)the internal resistance of the device by an order of magnitude and consequently demonstrate an improved responsivity and noise-equivalent-power values of the photodetector,*** results can be well understood by a series resistance model,as shown by the excellent agreement found between the experimental data and theoretical *** findings are therefore relevant to understand and improve the overall performance of existing high-mobility graphene photodetectors.

关键词： Graphene THz Photodetector Field-effect transistor Plasmonic

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Impact of device resistances in the performance of graphene-based terahertz photodetectors

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Frontiers of Optoelectronics 2024年第2期 89-99页

作者： óscar Castelló Sofía M.López baptista Kenji Watanabe Takashi Taniguchi Enrique Diez Jesús Enrique Velázquez-Pérez Yahya M.Meziani José M.Caridad Juan A.Delgado-Notario Department of Applied Physics University of Salamanca Unidad de Excelencia en luz y Materia Estructurada(LUMES) University of Salamanca Research Center for Electronic and Optical Materials National Institute for Materials Science Research Center for Materials Nanoarchitectonics National Institute for Materials Science Nanotechnology Group USAL–Nanolab University of Salamanca

In recent years, graphene field-effect-transistors(GFETs) have demonstrated an outstanding potential for terahertz(THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz applications, including 6G wireless communications, quantum information, bioimaging and security. However, the overall performance of these photodetectors may be utterly compromised by the impact of internal resistances presented in the device, so-called access or parasitic resistances. In this work, we provide a detailed study of the influence of internal device resistances in the photoresponse of high-mobility dual-gate GFET detectors. Such dual-gate architectures allow us to fine tune(decrease) the internal resistance of the device by an order of magnitude and consequently demonstrate an improved responsivity and noise-equivalent-power values of the photodetector, respectively. Our results can be well understood by a series resistance model, as shown by the excellent agreement found between the experimental data and theoretical calculations. These findings are therefore relevant to understand and improve the overall performance of existing high-mobility graphene photodetectors.

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