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基于边缘优化设计的低损耗Si3N4光功率分束器

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深圳大学学报（理工版） 2024年第5期41卷 532-535页

作者：黄谦睿梁耿钦陈宇泰孙怡雯闫培光屈军乐深圳大学物理与光电工程学院深圳市激光工程重点实验室广东深圳518060 国防科技大学理学院材料科学实验中心湖南长沙410073 深圳大学生物医学工程学院广东深圳518073

随着信息技术的发展,市场对于更小型化、更高效光器件的需求不断增加.采用互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)工艺,成功制备了Si_(3)N_(4)光功率分束器并对其进行测试.结果表明,在1550 nm波长下,边缘... 详细信息

随着信息技术的发展,市场对于更小型化、更高效光器件的需求不断增加.采用互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)工艺,成功制备了Si_(3)N_(4)光功率分束器并对其进行测试.结果表明,在1550 nm波长下,边缘优化的1×8功率分束器的总损耗仅为1.30 dB,且其体积相较于传统设计可减小30%.本研究应用逆向优化算法,突破了传统设计仅能针对规则图形设计的限制,为实现小尺寸、低损耗的光功率分束器提供了一种可行途径.

关键词：光学集成光学微纳光子器件光功率分束器逆向优化边缘优化

Memristive switching in two-dimensional BiSe crystals

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Nano Research 2023年第2期16卷 3188-3194页

作者： Wenda Ma Junfeng Lu Shuaipeng Ge Li Zhang Fengchang Huang Naiwei Gao peiguang yan Caofeng Pan College of Physics and Optoelectronic Engineering Shenzhen UniversityShenzhen 518060China CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and SensorBeijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijing 101400China College of Physics Nanjing University of Aeronautics and AstronauticsNanjing 211106China State Key Laboratory of Bioelectronics Southeast UniversityNanjing 210096China

In spite of the explosive rise of research on memristive switching,more improvements in tunability,versatility,and hetero-integration are required through the discovery and application of novel ***,we report resistance switching in nano-thick two-dimensional(2D)crystals of bismuth selenium(BiSe).The BiSe devices exhibit nonvolatile bipolar resistance switching,volatile switching,and electrical bistable behavior in different *** different memristive behavior of BiSe devices may be related to the concentration of Bi ions in this Bi-rich structure,which directly affects the capability of filaments ***,the external mechanical strain is applied in modulation of multi-layer BiSe *** memristive BiSe devices show a large on/off ratio of~10^(4)and retention time of~104 *** discovery of memristive switching behavior in multi-layer BiSe is attributed to the forming of Bi *** resistance switching behavior in multi-layer BiSe demonstrates the potential application in the flexible memories and functional integrated devices.

关键词： bismuth selenium heterostructure resistance switching memristors flexible memories strain engineering

Low-bias,high-photoresponsivity SnSe2 nanofilm with an Au split-ring array-based THz detector toward 6G communication

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Science China(Information Sciences) 2023年第6期66卷 311-312页

作者： Qi SONG Zhiwen ZHOU Yifei XU Min ZHANG Junbo yanG Huawei LIANG Tianwu WANG peiguang yan College of Physics and Optoelectronic Engineering Shenzhen University Shandong Key Laboratory of Optical Communication Science and Technology School of Physics Science and Information TechnologyLiaocheng University College of Liberal Arts and Sciences National University of Defense Technology GBA Research Institute Aerospace Information Research Institute of Chinese Academy of Science

6G technology with the four characteristics of an intelligent endogenous,secure endogenous,multi-domain convergence,and integrated computing network,will help society toward an intelligent era [1]. The low power consumption and high photoresponsivity of 6G core devices,and particularly the improvement of detector performance,

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Heterogeneous integrated phase modulator based on two-dimensional layered materials

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Photonics Research 2022年第6期10卷 1401-1407页

作者： HAO CHEN ZEXING ZHAO ZIMING ZHANG GUOQING WANG JIATONG LI ZHENYUAN SHANG MENGYU ZHANG KAI GUO JUNBO yanG peiguang yan College of Physics and Optoelectronic Engineering Shenzhen UniversityShenzhen 518060China Institute of Systems Engineering AMSBeijing 100039China College of Liberal Arts and Sciences National University of Defense TechnologyChangsha 410073China

Silicon nitride,with ultralow propagation loss and a wide transparency window,offers an exciting platform to explore integrated photonic devices for various emerging *** is appealing to combine the intrinsic optical properties of two-dimensional layered materials with high-quality optical waveguides and resonators to achieve functional devices in a single *** we demonstrate a micro-ring resonator-based phase modulator integrated with few-layer MoS_(2).The ionic liquid is employed directly on the surface of MoS_(2) to form a capacitor *** effective index of the composite MoS_(2)–SiN waveguide can be modulated via adjusting bias voltages to achieve different charged doping induced electro-refractive responses in MoS_(2) *** maximum effective index modulation of the composite MoS_(2)–SiN waveguide can be achieved to 0.45×10^(−3).The phase tuning efficiency is measured to be 29.42 pm/V,corresponding to a V_(π)L of 0.69 V·*** the micro-ring resonator is designed near the critical coupling regime,the coupling condition between the bus waveguide and micro-ring resonator can also be engineered from under-coupling to over-coupling regime during the charged doping *** can be involved as a degree of freedom for the coupling *** ability to modulate the effective index with two-dimensional materials and the robust nature of the heterostructure integrated phase modulator could be useful for engineering reliable ultra-compact and low-power-consumption integrated photonic devices.

关键词： modulator waveguide resonator

High-power mid-infrared femtosecond master oscillator power amplifier Er:ZBLAN fiber laser system

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High Power Laser Science and Engineering 2023年第4期11卷 85-90页

作者： Linpeng Yu Jinhui Liang Qinghui Zeng Jiacheng Wang Xing Luo Jinzhang Wang peiguang yan Fanlong Dong Xing Liu Qitao Lü Chunyu Guo Shuangchen Ruan Shenzhen Key Laboratory of Laser Engineering Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics EngineeringKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceState Key Laboratory of Radio Frequency Heterogeneous IntegrationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhenChina Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes Shenzhen Technology UniversityShenzhenChina Han’s Laser Technology Industry Group Co. Ltd.ShenzhenChina

High-power femtosecond mid-infrared(MIR)lasers are of vast importance to both fundamental research and *** report a high-power femtosecond master oscillator power amplifier laser system consisting of a singlemode Er:ZBLAN fiber mode-locked oscillator and pre-amplifier followed by a large-mode-area Er:ZBLAN fiber main *** main amplifier is actively cooled and bidirectionally pumped at 976 nm,generating a slope efficiency of 26.9%.Pulses of 8.12 W,148 fs at 2.8μm with a repetition rate of 69.65 MHz are *** the best of our knowledge,this is the highest average power ever achieved from a femtosecond MIR laser *** a compact ultrafast laser system is promising for a wide range of applications,such as medical surgery and material processing.

关键词： femtosecond fiber laser fluoride fiber amplifier master oscillator power amplifier mid-infrared

Generation of single solitons tunable from 3 to3.8μm in cascaded Er^(3+)-doped and Dy^(3+)-doped fluoride fiber amplifiers

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Photonics Research 2022年第9期10卷 2140-2146页

作者： LINPENG YU JINHUI LIANG SHITING HUANG JINZHANG WANG JIACHEN WANG XING LUO peiguang yan FANLONG DONG XING LIU QITAO LUE CHUNYU GUO SHUANGCHEN RUAN Shenzhen Key Laboratory of Laser Engineering Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics EngineeringKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes Shenzhen Technology UniversityShenzhen 518118China Han’s Laser Technology Industry Group Co. Ltd.Shenzhen 518057China

High-power tunable femtosecond mid-infrared(MIR)pulses are of great interest for many scientific and industrial *** we demonstrate a compact fluoride-fiber-based system that generates single solitons tunable from 3 to 3.8μ*** system is composed of an Er:ZBLAN fiber oscillator and amplifier followed by a fusion-spliced Dy:ZBLAN fiber *** Er:ZBLAN fiber amplifier acts as a power booster as well as a frequency shifter to generate Raman solitons up to 3μ*** Dy:ZBLAN fiber amplifier transfers the energy from the residual 2.8μm radiation into the Raman solitons using an in-band pumping scheme,and further extends the wavelength up to 3.8μ*** residual pump radiation and secondary solitons accompanying the soliton self-frequency shift(SSFS)are recycled to amplify Raman solitons,consequently displaying a higher output power and pulse energy,a wider shifting range,and an excellent spectral *** 252 fs pulses at3.8μm with a record average power of 1.6 W and a pulse energy of 23 n J are *** work provides an effective way to develop high-power widely tunable ultrafast single-soliton MIR laser sources,and this method can facilitate the design of other SSFS-based laser systems for single-soliton generation.

关键词： fiber tunable amplifier

High peak power femtosecond cylindrical vector beams generation in a chirped-pulse amplification laser system

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Chinese Optics Letters 2022年第3期20卷 52-56页

作者： Zexing Zhao Hao Chen Ziming Zhang jiatong Li Fangxiang Zhu Wei Wan Fei He Huifeng Wei Kangkang Chen peiguang yan College of Physics and Optoelectronic Engineering Shenzhen UniversityShenzhen 518060China Wuhan yangtze Soton Laser Photonics Co. Ltd.Wuhan 430205China

Cylindrical vector beams(CVBs),with non-uniform state of polarizations,have become an indispensable tool in many areas of science and ***,little research has explored high power CVBs at the femtosecond *** this paper,we report on tne generation of high quality CVBs with high peak power and femtosecond pulse duration in a fiber chirped-pulse amplification laser *** radially(azimuthally)polarized vector beam has been obtained with a pulse duration of 4A0 fs[430 fs]and a maximum average output power of 20.36 W[20.12 W].The maximum output pulse energy is〜20μJ at a repetition rate of 1 MHz,corresponding to a high peak power of-46 *** comparison between simulated intensity profiles and measured experimental results suggests that the generated CVBs have a remarkable intensity *** proposed configuration of our laser system provides a promising solution for high quality CVBs generation with the characteristics of high peak power,ultrashort pulse duration,and high mode purity.

关键词： femtosecond laser structural beams pulse shaping amplifier

A high-quality-factor ultra-narrowband perfect metamaterial absorber based on monolayer molybdenum disulfide

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Chinese Physics B 2022年第3期31卷 571-574页

作者： Liying Jiang Yingting Yi Yijun Tang Zhiyou Li Zao Yi Li Liu Xifang Chen Ronghua Jian Pinghui Wu peiguang yan Joint Laboratory for Extreme Conditions Matter Properties Southwest University of Science and TechnologyMianyang 621010China College of Physics and Electronics Central South UniversityChangsha 410083China College of Science Zhejiang University of TechnologyHangzhou 310023China School of Science Huzhou UniversityHuzhou 313000China College of Physics and Information Engineering Quanzhou Normal UniversityQuanzhou 362000China College of Physics and Optoelectronic Engineering Shenzhen UniversityShenzhen 518060China

In order to significantly improve the absorption efficiency of monolayer molybdenum disulfide(M-MoS_(2)), an ultranarrowband M-MoS_(2)metamaterial absorber was obtained through theoretical analysis and numerical calculation using the finite difference time domain method. The physical mechanism can be better analyzed through critical coupling and guided mode resonance. Its absorption rate at λ = 806.41 nm is as high as 99.8%, which is more than 12 times that of bare MMoS_(2). From the simulation results, adjusting the geometric parameters of the structure can control the resonant wavelength range of the M-MoS_(2). In addition, we also found that the maximum quality factor is 1256.8. The numerical result shows that the design provides new possibilities for ultra-narrowband M-MoS_(2) perfect absorbers in the near-infrared *** results of this work indicate that the designed structure has excellent prospects for application in wavelength-selective photoluminescence and photodetection.

关键词： metamaterials ultra-narrowband high quality factor critical coupling

Efficient improvement of 2.7 μm luminescence of Er^(3+):oxyfluoride glass containing gallium by Yb^(3+) ions codoping

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Journal of Rare Earths 2019年第5期37卷 487-491页

作者： Yapei Peng Xinqiang Yuan Long Zhang peiguang yan Wenfei Zhang Shuangchen Ruan Shenzhen Key Laboratory of Laser Engineering College of Optoelectronic Engineering Shenzhen University Key Laboratory of Materials for High Power Laser Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences

Mid-infrared laser materials with low phonon energy have significant applications. However, the development of available glass systems for high-power laser gain medium have posed a great ***, we investigated the 2.7 μm spectroscopic properties of Er^(3+)/Yb^(3+) -codoped oxyfluoride glass containing gallium, which were prepared by typically melting and quenching methods. The 2.7 μm luminescence properties of the Er^(3+)/Yb^(3+)-codoped oxyfluoride glass containing gallium were recorded by a 980 nm laser diode. The Judde Ofelt parameters, decay curves, emission cross section, energy transfer efficiency and quantum efficiency were calculated. The maximum emission cross section of YbFGa-0.5 is 1.63 × 10^(-20) cm^2 by 980 nm excitation. The energy transfer efficiency is calculated to be77.8% for the YbFGa-0.5 glass around 2700 nm. The quantum efficiency at 1530 nm is 65.6%. The result reveals that the best doping concentration ratio of Er^(3+):Yb^(3+) ions is 1:0.5, and suggests an effective energy transfer from Yb^(3+) to Er^(3+) ions.

关键词： Optical materials Optical spectroscopy Rare-earth ions doped Mid-infrared Energy transfer