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Heavy ion energy influence on multiple-cell upsets in small sensitive volumes:from standard to high energies

Nuclear Science and Techniques 2024年第5期35卷 109-121页

作者： Yang Jiao Li-Hua Mo Jin-Hu Yang Yu-Zhu Liu Ya-Nan Yin Liang Wang Qi-Yu Chen Xiao-Yu Yan Shi-Wei zhao Bo Li You-Mei Sun pei-xiong zhao Jie Liu Institute of Modern Physics Chinese Academy of ScienceLanzhou 730000China University of Chinese Academy of Science Beijing 100049China Spallation Neutron Source Science Center Dongguan 523803China China Electronics Technology Group Corporation No.58 Research Institute Wuxi 214000China Beijing Microelectronics Technology Institute Beijing 100084China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of SciencesBeijing 100029China

The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened ***,owing to the minimum physical gate length of only 35 nm,the physical area of a standard 6T SRAM unit is approximately 0.16μm^(2),resulting in a significant enhancement of multi-cell charge-sharing ***-cell upsets(MCUs)have become the primary physical mechanism behind single-event upsets(SEUs)in advanced nanometer node *** range of ionization track effects increases with higher ion energies,and spacecraft in orbit primarily experience SEUs caused by high-energy ***,ground accelerator experiments have mainly obtained low-energy ion irradiation ***,the impact of ion energy on the SEU cross section,charge collection mechanisms,and MCU patterns and quantities in advanced nanometer devices remains *** this study,based on the experimental platform of the Heavy Ion Research Facility in Lanzhou,low-and high-energy heavy-ion beams were used to study the SEUs of 28 nm SRAM *** influence of ion energy on the charge collection processes of small-sensitive-volume devices,MCU patterns,and upset cross sections was obtained,and the applicable range of the inverse cosine law was *** findings of this study are an important guide for the accurate evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques.

关键词： 28 nm static random access memory(SRAM) Energy effects Heavy ion Multiple-cell upset(MCU) Charge collection Inverse cosine law

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Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology

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Chinese Physics B 2022年第5期31卷 527-534页

作者： Dong-Qing Li Tian-Qi Liu pei-xiong zhao Zhen-Yu Wu Tie-Shan Wang Jie Liu Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China University of Chinese Academy of Sciences Beijing 100049China School of Physical Science and Technology Lanzhou UniversityLanzhou 730000China National University of Defense Technology Changsha 410000China Tsinghua University Beijing 100084China

Three-dimensional(3 D)TCAD simulations demonstrate that reducing the distance between the well boundary and N-channel metal-oxide semiconductor(NMOS)transistor or P-channel metal-oxide semiconductor(PMOS)transistor can mitigate the cross section of single event upset(SEU)in 14-nm complementary metal-oxide semiconductor(CMOS)bulk Fin FET *** competition of charge collection between well boundary and sensitive nodes,the enhanced restoring currents and the change of bipolar effect are responsible for the decrease of SEU cross *** dualinterlock cell(DICE)design,this approach is more effective under heavy ion irradiation of higher LET,in the presence of enough taps to ensure the rapid recovery of well ***,the feasibility of this method and its effectiveness with feature size scaling down are discussed.

关键词： TCAD simulation FinFET single event upset(SEU)mitigation

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A new gravitational theory and dark matter problem

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Communications in Theoretical Physics 2024年第6期76卷 129-136页

作者： xiong zhao Yongge Ma Department of Physics Beijing Normal UniversityBeijing 100875China

We propose a new gravitational theory with torsion based on Riemann-Cartan geometry,in which all physical quantities are *** addition to the spacetime metric,the gravitational degrees of freedom in this theory also include the torsion and two scalar *** energy-momentum tensor of the matter fields in this theory is also proposed.A spherically symmetric static vacuum solution of the theory is *** turns out that this solution can fit the observational data of the rotation curve outside the stellar disk in the Milky ***,the galactic dark matter may just be the gravitational effect of the theory with torsion.

关键词： gravity torsion dark matter

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Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM

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Chinese Physics B 2021年第3期30卷 394-401页

作者： Li-Hua Mo Bing Ye Jie Liu Jie Luo You-Mei Sun Chang Cai Dong-Qing Li pei-xiong zhao Ze He Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China University of Chinese Academy of Sciences Beijing 100049China

Three-dimensional integrated circuits(3D ICs)have entered into the mainstream due to their high performance,high integration,and low power *** used in atmospheric environments,3D ICs are irradiated inevitably by *** this paper,a 3D die-stacked SRAM device is constructed based on a real planar SRAM ***,the single event upsets(SEUs)caused by neutrons with different energies are studied by the Monte Carlo *** SEU cross-sections for each die and for the whole three-layer die-stacked SRAM device is obtained for neutrons with energy ranging from 1 MeV to 1000 *** results indicate that the variation trend of the SEU cross-section for every single die and for the entire die-stacked device is consistent,but the specific values are *** SEU cross-section is shown to be dependent on the threshold of linear energy transfer(LETth)and thickness of the sensitive volume(Tsv).The secondary particle distribution and energy deposition are analyzed,and the internal mechanism that is responsible for this difference is ***,the ratio and patterns of multiple bit upset(MBU)caused by neutrons with different energies are also *** work is helpful for the aerospace IC designers to understand the SEU mechanism of 3D ICs caused by neutrons irradiation.

关键词： neutron three-dimension ICs single event upset multi-bit upset Geant4

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Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

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Nuclear Science and Techniques 2019年第5期30卷 92-102页

作者： Chang Cai Tian-Qi Liu Xiao-Yuan Li Jie Liu Zhan-Gang Zhang Chao Geng pei-xiong zhao Dong-Qing Li Bing Ye Qing-Gang Ji Li-Hua Mo Institute of Modern Physics Chinese Academy of Sciences University of Chinese Academy of Sciences School of Physical Science and Technology Lanzhou University Academy of Shenzhen State Microelectronic Co. Ltd. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory

Single event effects of 1-T structure programmable read-only memory(PROM) devices fabricated with a 130-nm complementary metal oxide semiconductorbased thin/thick gate oxide anti-fuse process were investigated using heavy ions and a picosecond pulsed laser. The cross sections of a single event upset(SEU) for radiationhardened PROMs were measured using a linear energy transfer(LET) ranging from 9.2 to 95.6 MeV cm^2mg^(-1).The result indicated that the LET threshold for a dynamic bit upset was ～ 9 MeV cm^2mg^(-1), which was lower than the threshold of ～ 20 MeV cm^2mg^(-1) for an address counter upset owing to the additional triple modular redundancy structure present in the latch. In addition, a slight hard error was observed in the anti-fuse structure when employing209 Bi ions with extremely high LET values(～ 91.6 MeV cm^2mg^(-1)) and large ion fluence(～ 1×10~8 ions cm^(-2)). To identify the detailed sensitive position of a SEU in PROMs, a pulsed laser with a 5-μm beam spot was used to scan the entire surface of the *** revealed that the upset occurred in the peripheral circuits of the internal power source and I/O pairs rather than in the internal latches and buffers. This was subsequently confirmed by a ^(181)Ta experiment. Based on the experimental data and a rectangular parallelepiped model of the sensitive volume, the space error rates for the used PROMs were calculated using the CRèME-96 prediction tool. The results showed that this type of PROM was suitable for specific space applications, even in the geosynchronous orbit.

关键词： Anti-fuse PROM Single event effects Heavy ions Pulsed laser Space error rate

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Influences of total ionizing dose on single event effect sensitivity in floating gate cells

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Chinese Physics B 2018年第8期27卷 400-405页

作者： Ya-Nan Yin Jie Liu Qing-Gang Ji pei-xiong zhao Tian-Qi Liu Bing ye Jie Luo You-Mei Sun Ming-Dong Hou Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China University of Chinese Academy of Sciences Beijing 100049China Lanzhou University Lanzhou 730000China

The influences of total ionizing dose （TID） on the single event effect （SEE） sensitivity of 34-nm and 25-nm NAND flash memories are investigated in this paper. The increase in the cross section of heavy-ion single event upset （SEU） in memories that have ever been exposed to TID is observed, which is attributed to the combination of the threshold voltage shifts induced by 7-rays and heavy ions. Retention errors in floating gate （FG） cells after heavy ion irradiation are observed. Moreover, the cross section of retention error increases if the memory has ever been exposed to TID. This effect is more evident at a low linear energy transfer （LET） value. The underlying mechanism is identified as the combination of the defects induced by 7-rays and heavy ions, which increases the possibility to constitute a multi-trap assisted tunneling （m- TAT） path across the tunnel oxide.

关键词： flash memories heavy ions synergistic effect total ionizing dose

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Intuitive Human-Robot-Environment Interaction With EMG Signals:A Review

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IEEE/CAA Journal of Automatica Sinica 2024年第5期11卷 1075-1091页

作者： Dezhen xiong Daohui Zhang Yaqi Chu Yiwen zhao Xingang zhao State Key Laboratory of Robotics Shenyang Institute of AutomationChinese Academy of SciencesShenyang 110016 Institutes for Robotics and Intelligent Manufacturing Chinese Academy of SciencesShenyang 110169 University of Chinese Academy of Sciences Beijing 100049China

A long history has passed since electromyography(EMG)signals have been explored in human-centered robots for intuitive ***,it still has a gap between scientific research and real-life *** studies mainly focused on EMG decoding algorithms,leaving a dynamic relationship between the human,robot,and uncertain environment in real-life scenarios seldomly *** fill this gap,this paper presents a comprehensive review of EMG-based techniques in human-robot-environment interaction(HREI)*** general processing framework is summarized,and three interaction paradigms,including direct control,sensory feedback,and partial autonomous control,are ***-based intention decoding is treated as a module of the proposed *** key issues involving precision,stability,user attention,compliance,and environmental awareness in this field are *** important directions,including EMG decomposition,robust algorithms,HREI dataset,proprioception feedback,reinforcement learning,and embodied intelligence,are proposed to pave the way for future *** the best of what we know,this is the first time that a review of EMG-based methods in the HREI system is *** provides a novel and broader perspective to improve the practicability of current myoelectric interaction systems,in which factors in human-robot interaction,robot-environment interaction,and state perception by human sensations are considered,which has never been done by previous studies.

关键词： robot summarized Robot

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Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

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Chinese Physics B 2020年第2期29卷 374-380页

作者： Bing Ye Li-Hua Mo Tao Liu Jie Luo Dong-Qing Li pei-xiong zhao Chang Cai Ze He You-Mei Sun Ming-Dong Hou Jie Liu Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China University of Chinese Academy of Sciences Beijing 100049China Science and Technology on Analog Integrated Circuit Laboratory Chongqing 400060China

Geant4 Monte Carlo simulation results of the single event upset(SEU)induced by protons with energy ranging from 0.3 MeV to 1 GeV are *** SEU cross section for planar and three-dimensional(3D)die-stacked SRAM are *** results show that the SEU cross sections of the planar device and the 3D device are different from each other under low energy proton direct ionization mechanism,but almost the same for the high energy ***,the multi-bit upset(MBU)ratio and pattern are presented and *** results indicate that the MBU ratio of the 3D die-stacked device is higher than that of the planar device,and the MBU patterns are more ***,the on-orbit upset rate for the 3D die-stacked device and the planar device are calculated by SPACE RADIATION *** calculation results indicate that no matter what the orbital parameters and shielding conditions are,the on-orbit upset rate of planar device is higher than that of 3D die-stacked device.

关键词： 3D-IC single event upset Geant4 proton

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Spacelike Framed Curves with Lightlike Components and Singularities of Their Evolutes and Focal Surfaces in Minkowski 3-space

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Acta Mathematica Sinica,English Series 2024年第6期40卷 1521-1532页

作者： Peng Cheng LI Dong He pei Xin zhao School of Mathematics and Statistics Northeast Normal UniversityChangchun 130024P.R.China Department of Mathematics Harbin Institute of TechnologyWeihai 264209P.R.China School of Mathematics and Statistics Qingdao UniversityQingdao 266071P.R.China

In this paper,we define the evolute and focal surface of a spacelike framed curve with lightlike components in Minkowski *** is a generalization of the previous results of regular spacelike curves,since singularities are allowed in the original spacelike curves studied by spacelike framed curves with lightlike ***,we show a new geometric invariant to characterise singularities of the focal ***,the classification theorem and recognition theorem for the singularities of the focal surface in generic are also given.

关键词： Evolutes focal surfaces spacelike framed curves singularities

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Multi-layer hierarchical cellulose nanofibers/carbon nanotubes/vinasse activated carbon composite materials for supercapacitors and electromagnetic interference shielding

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Nano Research 2024年第3期17卷 904-912页

作者： Tianxu Wang Chuanyin xiong Yongkang Zhang Bo Wang Qing xiong Mengjie zhao Yonghao Ni College of Bioresources Chemical&Materials Engineering Shaanxi University of Science and TechnologyXi’an 710021China Department of Chemical and biomedical Engineering The University of MaineOronoME 04469USA University of New Brunswick Limerick Pulp&Paper CtrFrederictonNB E3B 5A3Canada

Developing porous self-supporting electrodes with excellent conductivity,good mechanical properties,and high electrochemical activity is crucial for constructing electrode materials with lightweight,ultra-thin,flexible,and high capacitance *** this work,we prepared a cellulose nanofibers(CNFs)/carbon nanotubes(CNTs)/vinasse activated carbon(VAC)(CCV)composite material with a multi-layer hierarchical conductive structure through simple vacuum filtration and *** this composite material,the self-assembly of CNF provides the main skeleton structure of a multi-layer hierarchical *** provides a fast path for the rapid transfer of electrons and is beneficial for the loss of electromagnetic *** provides sufficient double layer *** synergistic effect of the above three endows CCV composite materials with excellent energy storage performance and electromagnetic interference(EMI)shielding *** addition,we endowed the CCV composite with a certain shape and performance by introducing a vitrimer polymer with a dynamic cross-linked network *** summary,thanks to the synergistic effect of various components in the multi-layer hierarchical structure,CCV composite materials exhibit excellent integration performance,especially stable energy storage performance and EMI shielding *** significant properties make CCV composite materials have great application prospects in the fields of energy storage and intelligent EMI shielding.

关键词： self-supporting electrodes multi-layer hierarchical structure supercapacitors electromagnetic interference shielding

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