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Silicon dots films deposited by spin-coating as a generated carrier addition layer of third generation photovoltaics

引用

Progress in Natural Science:Materials International 2021年第2期31卷 192-200页

作者： Thipwan Fangsuwannarak Supanut Laohawiroj peerawoot rattanawichai Kamonchanok Mekmork Warakorn Limsiri Rungrueang Phatthanakun School of Electrical Engineering Institute of Engineering Suranaree University of Technology Research Network NANOTEC-SUT on Advanced Nanomaterials and Characterization School of Electrical Engineering Suranaree University of Technology BL6a:Deep X-ray Lithography Synchrotron Light Research Institute (Public Organization)

In this work, silicon ink composing of silicon powder and zinc oxide solution was formulated and spin-coated on quartz and n/p-Si substrates followed by drying the films under atmosphere at the temperature of 550°C. The results showed that this top-addition layer could be the highly promising layer for photo-generating carriers in third-generation photovoltaics to enhance blue-light absorption. X-ray diffraction and scanning electron microscopy techniques were used to study the presence of silicon and zinc oxide nano-crystallites. The thin films consisting of different energy bandgap of Si nanocrystals(～100 nm) with narrow bandgap and spherical Zn O:Bi nanocrystal(～20 nm) with wider bandgap could be obtained from the evidence of bandgap enlargement. The band gaps of the thin films were tunable by adjusting silicon dots density in Zn O:Bi film. Energy upshift of light absorption edge depended on the silicon dots density was observed in the range 1.6–3.3 eV related band gap enlargement by Tauc plot. Under illumination, a high photocurrent gain of the thin film comprised of low Si dots density coated on a quartz substrate was about 10~3 times higher compared with its dark current. This result is agreeably explained in terms of its lower superficial trap states at the interface between silicon and zinc oxide matrix. The composite layer can be applied to a third-generation solar cell with the efficiency 1.50% higher than that with a typical crystalline-Si solar cell.

关键词： Silicon powder Silicon crystallites Zinc oxide doped bismuth and silicon ink

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