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Promising graphdiyne-based nanomaterials for environmental pollutant control

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Science China Materials 2024年第11期67卷 3456-3467页

作者： chuanqi pan Qianli He Chaofan Li College of Environmental Engineering Henan University of TechnologyZhengzhou 450001China 2 Institute of ChemistryHenan Academy of SciencesZhengzhou 450002China Institute of Quality Standard and Testing Technology for Agro-Products Chinese Academy of Agricultural Sciencesand Key Laboratory of Agro-Food Safety and Quality Ministry of Agriculture and Rural AffairsBeijing 100081China Henan Academy of Sciences Zhengzhou 450046China

ABSTRACT Environmental pollutants,including gas phase pollutants,liquid organic pollutants,heavy metal ions,and pathogenic bacteria,pose a serious threat to our ecological environment and human *** addressing these pollutants has become one of the most urgent ***(GDY),as an emerging carbon material for environmental remediation,has unique acetylene bonds and abundant pore *** unique carbon atomic structure of sp/sp2 hybrid endows it with tunable electronic structure and outstanding physical and chemical *** review summarizes the practical applications of GDY-based nanomaterials in the context of environmental pollution control,including carbon monoxide(CO)oxidation,ozone(O_(3))decomposition,heavy metal ion detection and adsorption,organic pollutant degradation,and bacterial ***,the structure-performance relationship of GDYbased nanomaterials is analyzed,and the issues and challenges in the field of environmental remediation of GDY-based materials are indicated.

关键词： graphdiyne CO oxidation O_(3) decomposition heavy metal ion detection and adsorption organic pollutant degradation bacterial inactivation

Fabrication and Excellent Antibacterial Activity of Well-defined CuO/Graphdiyne Nanostructure

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Chemical Research in Chinese Universities 2021年第6期37卷 1341-1347页

作者： pan chuanqi LIU Xiaoxuan ZHANG Xiang MAO Feihong XU Peiyan ZHU Yuhua DENG Hongtao LUO Zhu SUN Hongwei ZHANG Lizhi GUO Yanbing Key Laboratory of Pesticide&Chemical Biology Ministry of EducationInstitute of Environmental and Applied ChemistryCollege of ChemistryCentral China Normal UniversityWuhan430079P.R.China

Copper oxide(CuO),due to its low cost,good chemical and physical stability,has recently been given special attention as a potential candidate for antibacterial ***,developing novel CuO nanocomposites with improved antibacterial property and unraveling the interface promotion mechanism has been a fundamental challenge for ***,well-defined CuO/graphdiyne(CuO/GDY)nanostructures with uniformly anchored CuO nanoparticles(ca.4.5 nm)have been *** CuO/GDY nanostructure exhibited superior *** inactivation efficiency,which is nearly 19 times and 7.9 times higher than the bare GDY and commercial CuO,*** improved *** inactivation performance was mainly due to the increased reactive·O_(2)−species generated by the activation of molecular O2 over CuO/GDY *** findings demonstrate the efficient antibacterial activity of well-defined CuO/GDY nanostructures and provide insights on the development of efficient GDY-based antibacterial materials.

关键词： Graphdiyne CuO/GDY nanocomposite Escherichia coli Antibacterial Superoxide radical

Substrate bias effects in p-channel GaN-on-Si transistors

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Science China(Information Sciences) 2024年

作者： Mengyao ZHAO Jie MA Lanlan YANG chuanqi pan Denggui WANG Jianjun ZHOU Sheng LI Jiaxing WEI Long ZHANG Siyang LIU Weifeng SUN National ASIC System Engineering Research Center School of Integrated Circuits Southeast University National Center of Technology Innovation for Electronic Design Automation Southeast University National Key Laboratory of Solid-State Microwave Devices and Circuits

The drain current (ID) of the n-channel GaNfield-effecttransistor (n-FET) is influenced by the substrate-to-source bias voltage (VBS)(substrate bias effect)[1]. Actually, nonzero VBSis also likely to occur in p-FET in real application,because the source electrode of p-FET is usually connected to high voltage. This study reports the dependency between IDand VBSin p-FET for the first time, and analyzes the underlying mechanisms from the perspective of vertical electric field (EF) distribution.

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1400 V/240 mΩ增强型硅基p-GaN栅结构AlGaN/GaN HEMT器件

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固体电子学研究与进展 2023年第1期43卷 11-15,45页

作者：潘传奇王登贵周建军胡壮壮郁鑫鑫李忠辉陈堂胜微波毫米波单片集成和模块电路重点实验室南京210016 南京电子器件研究所南京210016

基于硅基p-GaN/AlGaN/GaN异质结材料结构,研制了一款横向结构的高压增强型GaN高电子迁移率晶体管(GaN HEMT)器件。通过采用自对准栅刻蚀与损伤修复技术以及低温无金欧姆合金工艺实现了较低的导通电阻,并借助于叠层介质钝化和多场板峰值... 详细信息

基于硅基p-GaN/AlGaN/GaN异质结材料结构,研制了一款横向结构的高压增强型GaN高电子迁移率晶体管(GaN HEMT)器件。通过采用自对准栅刻蚀与损伤修复技术以及低温无金欧姆合金工艺实现了较低的导通电阻,并借助于叠层介质钝化和多场板峰值抑制技术提升了器件的击穿特性。测试结果表明,所研制GaN器件的阈值电压为1.95 V(V_(GS)=V_(DS),IDS=0.01 mA/mm),导通电阻为240 mΩ(V_(GS)=6 V,V_(DS)=0.5 V),击穿电压高于1400 V(V_(GS)=0 V,IDS=1μA/mm),彰显了硅基p-GaN栅结构AlGaN/GaN HEMT器件在1200 V等级高压应用领域的潜力。

关键词： GaN HEMT 增强型 p-GaN栅击穿电压导通电阻

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少层氮化硼的生长机理及技术研究

固体电子学研究与进展 2022年第6期42卷 510-514,520页

作者：李传皓李忠辉彭大青张东国杨乾坤潘传奇沈睿微波毫米波单片集成和模块电路重点实验室南京电子器件研究所南京210016 中国电科碳基电子重点实验室南京210016

采用MOCVD技术在50.8 mm(2英寸)蓝宝石衬底上开展氮化硼(BN)材料的外延生长研究。基于Ⅴ/Ⅲ族源的同时输运工艺,探究了无序岛状、生长自终止及二维层状等三种BN生长模式的外延机理,并实现了5-6层原子厚的二维BN材料的制备。同时,提出了... 详细信息

采用MOCVD技术在50.8 mm(2英寸)蓝宝石衬底上开展氮化硼(BN)材料的外延生长研究。基于Ⅴ/Ⅲ族源的同时输运工艺,探究了无序岛状、生长自终止及二维层状等三种BN生长模式的外延机理,并实现了5-6层原子厚的二维BN材料的制备。同时,提出了一种Ⅴ/Ⅲ族源的同时输运及分时输运相结合的外延生长工艺,显著提升了二维BN材料质量,其中1μm×1μm表面粗糙度Ra为0.10 nm,光学带隙宽度为5.77 eV,拉曼E2g模式的半高宽为60.7 cm^(-1)。

关键词：氮化硼外延生长少层材料蓝宝石衬底结晶质量提升

The role of axon guidance molecules in the pathogenesis of epilepsy

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Neural Regeneration Research 2025年第5期20卷 1244-1257页

作者： Zheng Liu Chunhua pan Hao Huang Department of Neurology Affiliated Hospital of Zunyi Medical UniversityZunyiGuizhou ProvinceChina

Current treatments for epilepsy can only manage the symptoms of the condition but cannot alter the initial onset or halt the progression of the disease. Consequently, it is crucial to identify drugs that can target novel cellular and molecular mechanisms and mechanisms of action. Increasing evidence suggests that axon guidance molecules play a role in the structural and functional modifications of neural networks and that the dysregulation of these molecules is associated with epilepsy susceptibility. In this review, we discuss the essential role of axon guidance molecules in neuronal activity in patients with epilepsy as well as the impact of these molecules on synaptic plasticity and brain tissue remodeling. Furthermore, we examine the relationship between axon guidance molecules and neuroinflammation, as well as the structural changes in specific brain regions that contribute to the development of epilepsy. Ample evidence indicates that axon guidance molecules, including semaphorins and ephrins, play a fundamental role in guiding axon growth and the establishment of synaptic connections. Deviations in their expression or function can disrupt neuronal connections, ultimately leading to epileptic seizures. The remodeling of neural networks is a significant characteristic of epilepsy, with axon guidance molecules playing a role in the dynamic reorganization of neural circuits. This, in turn, affects synapse formation and elimination. Dysregulation of these molecules can upset the delicate balance between excitation and inhibition within a neural network, thereby increasing the risk of overexcitation and the development of epilepsy. Inflammatory signals can regulate the expression and function of axon guidance molecules, thus influencing axonal growth, axon orientation, and synaptic plasticity. The dysregulation of neuroinflammation can intensify neuronal dysfunction and contribute to the occurrence of epilepsy. This review delves into the mechanisms associated with

关键词： axon guidance drug-resistant epilepsy epilepsy nerve regeneration nervous system diseases neural pathways neuroinflammatory diseases neuronal plasticity neurons synaptic remodeling

用于GaN CMOS集成技术的p型GaN欧姆接触研究

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固体电子学研究与进展 2024年第3期44卷 196-200,251页

作者：潘传奇王登贵周建军胡壮壮严张哲郁鑫鑫李忠辉陈堂胜南京电子器件研究所南京210016 固态微波器件与电路全国重点实验室南京210016

通过金属叠层结构、蒸发-合金工艺条件的优化调整,实现了低接触电阻率、高稳定的p型GaN欧姆接触技术,并研究分析了电极金属在合金过程中的扩散行为。测试结果显示,改进后的p型GaN欧姆接触电阻为11.9Ω·mm,比导通电阻率为3.9×10^(-5)Ω... 详细信息

通过金属叠层结构、蒸发-合金工艺条件的优化调整,实现了低接触电阻率、高稳定的p型GaN欧姆接触技术,并研究分析了电极金属在合金过程中的扩散行为。测试结果显示,改进后的p型GaN欧姆接触电阻为11.9Ω·mm,比导通电阻率为3.9×10^(-5)Ω·cm^(2),同时在250℃以内的高温环境中欧姆特性不会发生退化。在此基础上,采用低损伤凹槽栅刻蚀、叠层栅介质沉积等工艺研制出增强型p沟道GaN晶体管器件,器件的阈值电压为-1.2 V(V_(GS)=VDS,IDS=10μA/mm),漏极电流密度为-5.6 mA/mm,导通电阻为665Ω·mm(V_(GS)=-8 V,V_(DS)=-2 V)。优异的p型GaN欧姆接触技术为高性能GaN p沟道器件的研制以及GaN CMOS集成技术的小型化、智能化、高速化发展奠定了重要基础。

关键词： GaN CMOS p型GaN p沟道器件欧姆接触低接触电阻

Defect Engineering:Can it Mitigate Strong Coulomb Effect of Mg^(2+)in Cathode Materials for Rechargeable Magnesium Batteries?

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Nano-Micro Letters 2025年第1期17卷 135-159页

作者： Zhengqing Fan Ruimin Li Xin Zhang Wanyu Zhao Zhenghui pan Xiaowei Yang School of Chemistry and Chemical Engineering Shanghai Jiao Tong UniversityShanghai 200240People’s Republic of China School of Chemistry and Chemical Engineering Taiyuan University of TechnologyTaiyuan 030024People’s Republic of China School of Materials Science and Engineering Tongji UniversityShanghai 201804People’s Republic of China

Rechargeable magnesium batteries(RMBs)have been considered a promising“post lithium-ion battery”system to meet the rapidly increasing demand of the emerging electric vehicle and grid energy storage ***,the sluggish diffusion kinetics of bivalent Mg^(2+)in the host material,related to the strong Coulomb effect between Mg^(2+)and host anion lattices,hinders their further development toward practical *** engineering,regarded as an effective strategy to break through the slow migration puzzle,has been validated in various cathode materials for *** this review,we first thoroughly understand the intrinsic mechanism of Mg^(2+)diffusion in cathode materials,from which the key factors affecting ion diffusion are further ***,the positive effects of purposely introduced defects,including vacancy and doping,and the corresponding strategies for introducing various defects are *** applications of defect engineering in cathode materials for RMBs with advanced electrochemical properties are also ***,the existing challenges and future perspectives of defect engineering in cathode materials for the overall high-performance RMBs are described.

关键词： Rechargeable magnesium battery Sluggish diffusion kinetic Defect engineering Cathode materials Ion migration

Systematic comparison of Kawasaki disease Z-score formulas:Enhancing diagnostic accuracy and clinical applicability across populations

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World Journal of Clinical Pediatrics 2025年第1期14卷 63-68页

作者： Yan pan Fu-Yong Jiao Department of Pediatrics The First Affiliated Hospital of Yangtze UniversityJingzhou 434000Hubei ProvinceChina Shaanxi Kawasaki Disease Diagnosis and Treatment Center Children's HospitalShaanxi Provincial People's Hospital of Xi'anJiaotong UniveristyXi'an 710000Shaanxi ProvinceChina

This study aims to evaluate the performance of six distinct Z-score formulas in diagnosing coronary artery dilation in Kawasaki disease(KD)patients,with a focus on their clinical applicability across diverse populations.A retrospective analysis was conducted using comparative statistical methods to assess the sensitivity and specificity of each *** Kobayashi and Dallaire formulas demonstrated the highest sensitivity in China,particularly in younger patients with prolonged fever *** findings provide evidence-based recommend-ations for selecting Z-score formulas to optimize diagnostic precision in KD patients.

关键词： Kawasaki disease Early diagnosis Z-score Children