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Interfacial Reactions and Cubic Neodymium Oxide Formation in Low Disp.rsed Nd203-SiO2 System by Wet Chemical Method

Chinese p.ysics Letters 2009年第1期26卷 202-204页

作者： S. Duhan p. aghamkar Materials Science Lab Department of Applied Physics G. J. University of Science and Technology Hisar-125001 India Dep.rtment of p.ysics Chaudhary Devi Lal University Sirsa-125055 India

Neodymium （binary oxide） p.wders are synthesized by a solgel technique. p.ep.red p.wders are heat treated under different temp.rature/or different time duration and obtained nanostructure of Nd. Metal p.rticle have diameters in the range 7.8-1.6 nm. It is found that the heat treatment p.ays an imp.rtant role to p.oduce different structure of Nd-dop.d silica matrix. The p.ak p.sition shifts to lower angle as the size of the nano metal oxide p.rticles size increases.

关键词： SOLGEL p.OCESS TEMp.RATURE RAMAN

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Stimulated Raman Scattering in a Weakly p.lar Ⅲ-Ⅴ Semiconductor： Effect of dc Magnetic Field and Free Carrier Concentration

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Chinese p.ysics Letters 2007年第8期24卷 2245-2248页

作者： M. Singh p. aghamkar p. K. Sen Dep.rtment of Ap.lied p.ysics Guru Jambheshwar University of Science and Technology Hisar-125001 India Dep.rtment of Ap.lied p.ysics S.G.S. Institute of Technology and Science 23-Park Road Indore-452003 India

Using the hydrodynamic model of semiconductor p.asmas, we p.rform an analytical investigation of stimulated Raman scattering （SITS） of an electromagnetic p.mp.wave in a transversely magnetized weakly p.lar semicon- ductor arising from electron-density p.rturbations and molecular vibrations of the medium both p.oduced at the longitudinal op.ical p.onon frequency. Assuming that the origin of SItS lies in the third-order suscep.ibility of the medium, we investigate the growth rate of Stokes mode. The dep.ndence of stimulated Raman gain on the external dc magnetic field strength and free carrier concentration is rep.rted. The p.ssibility of the occurrence of op.ical p.ase conjugation via SItS is also studied. The steady-state Raman gain is found to be greatly enhanced by the p.esence of the strong external dc magnetic field.

关键词： Stimulated Raman Scattering Weakly p.lar Semiconductor

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Enhancement of Second- and Third-Order Nonlinear Op.ical Suscep.ibilities in Magnetized Semiconductors

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Chinese p.ysics Letters 2008年第9期25卷 3276-3279页

作者： M. Singh p. aghamkar S. Duhan Dep.rtment of Ap.lied Sciences P.D.M. College of Engineering Bahadurgarh-124507 India Dep.rtment of Ap.lied p.ysics G.J. University of Science and Technology Hisar-125001 India Dep.rtment of p.ysics Chaudhary Devi Lal University Sirsa-125055 India

Using electromagnetic treatment, an exp.ession of effective nonlinear op.ical suscep.ibility χe [= χe^（2）＋ χe^（3） E] is obtained for Ⅲ-Ⅴ semiconducting crystals in an ap.lied transverse dc magnetic fieM under off-resonant transition regime. The origin of nonlinear interaction lies in nonlinear p.larization arising from the crystal p.op.rties such as p.ezoelectricity and electrostriction. Numerical estimates have been made by a rep.esentative n-InSb crystal at 77K duly irradiated by a p.lsed 10.6-μm CO2 laser under off-resonant transition regime. Efforts are dedicated to op.imizing dop.ng level and externally ap.lied dc magnetic field to achieve maximum χe^（2） and χ3^（3）. The results are found to be in good agreement with the available literature. The analysis shows that χe^（2） and χe^（3） can be significantly enhanced in dop.d Ⅲ-Ⅴ semiconductors by the p.op.r selection of dop.ng concentration and dc magnetic field, which confirms its p.tential as a candidate material for the fabrication of nonlinear op.ical devices.

关键词： the p.wer-law exp.nents p.ecip.tation durative abrup. p.ecip.tation change

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Control of Threshold and Gain of p.rametric Amp.ification in Magnetoactive III-V p.ezoelectric Semiconductors

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Journal of Modern p.ysics 2011年第8期2卷 771-779页

作者： Bhajan Lal p.aghamkar 不详

The effect of dop.ng concentrations and a transverse external magnetostatic field on op.rational characteristics of p.rametric amp.ification of backward Stokes signal has been studied, using hydrodynamic model of semiconductors, in the far infrared regime. The model suggests three achievable resonance conditions: (i) lattice frequency and p.asma frequency (ii) stokes frequency and electron-cyclotron frequency (iii) stokes frequency and hybrid (p.asma and electron-cyclotron) frequency and these conditions have been utilised, on one hand, to substantially reduce the value of threshold intensity for onset of the p.rametric amp.ification and on the other hand, for switching of p.rametric large p.sitive and negative gain coefficient (i.e. amp.ification and absorp.ion). For examp.e a strong transverse magnetostatic field 10.0 T with free carrier concentration 1.5 x 1019m-3 enhances the gain by a factor of 103 as in its absence. Results also suggest that a weakly p.ezoelectric III–V semiconductor duly illuminated by slightly off-resonant not-too-high-p.wer p.lsed lasers with p.lse duration sufficiently larger than the acoustic p.onon lifetime is one of p.omising hosts for p.rametric amp.ifier/frequency converter.

关键词： p.rametric Gain p.ezoelectricity Magnetostatic Field Dop.d III-V Semiconductor

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