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The influence of growth interru{0.ion in quantum dot laser

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The influence of growth interruption in quantum dot laser

第一届全国纳米技术与应用学术会议

作者： Wang H.. Niu Z.C, FENG S.L.National Laboratory for Su{0.rlalticcs and Microslructurcs, Institute of Semiconductors, Chinese Academyof Sciences. p. 0. box 912. Beijing China 10.0.3

＜正＞ Growth interru{0.ion is introduced during the growth of GaAs ca{0.ing layer of self-organized quantum dots. The com{0.rison of two QD lasers with and without growth interru{0.ion in their active regions show that growth interru{0.ion leads to lower threshold current, higher characteristic tem{0.rature. weaker de{0.ndent on tem{0.rature of lasing energy.

关键词： InAs/GuAs Quantum dots Quantum dot laser Growth interru{0.ion.

ELECTRON AND HOLE TRANS{0.RT THROUGH DILUTED MAGNETIC SEMICONDUCTOR JUNCTIONS

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ELECTRON AND HOLE TRANSPORT THROUGH DILUTED MAGNETIC SEMICON...

第8届国际材联电子材料国际研讨会

作者： Kai Chang J. B. Xia H. B. WuNational Key Lab for Su{0.rlattices and Microstructures Inst. of Semiconductor CAS p. 0. box 912 Beijing 10.0.3. China

＜正＞ The electron and hole trans{0.rt through diluted magnetic semiconductor （DMS） junctions is investigated theoretically within the framework of the single and multi-band effective mass theory. In the ballistic regime,the tunneling magnetoresistance （TMR） of electron oscillates with increasing magnetic field at low tem{0.rature, An interesting beating {0.ttern in TMR and s{0.n {0.larization is found for different nonmagnetic semiconductor/DMS double barrier structures which arises from an inter{0.ay between the s{0.n-u{0.and

关键词：

Cyclotron Resonance Mass of Magneto{0.laron in a {0.lar Crystal Slab at Finite Tem{0.ratures

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Cyclotron Resonance Mass of Magnetopolaron in a Polar Crysta...

CCAST“量子输运和介观物理”研讨会

作者： Jingbo LiNational Laboratory for Su{0.rlattices and Microstructures,Institute of Semiconductors, Chinese Academy of Sciences, p. 0. box 912, Beijing 10.0.3, China.Bao-Hua WeiDe{0.rtment of {0.ysics, University of Toronto, 60.St. George St. , Toronto, Ontario, M5S 1A7, CanadaJian-Bai XiaCCAST (World Laboratory), {0. O. box 8730. Beijing 10.0.0. China.and Institute of Semiconductors, Chinese Academy of Sciences,{0. O. box 912, Beijing 10.0.3, China

＜正＞Using the Green function method,we have studied the cyclotron resonance of an elec-tron interacting with bulk longitudinal o{0.ical （BO） {0.onons as well as surface o{0.ical（SO） {0.onons in a {0.lar crystal slab at finite *** is found that the tem{0.r-ature de{0.ndence of magneto{0.laron de{0.nds strongly on the strength of the *** numerical results show that the cyclotron resonance mass of {0.laron in a slabis an increasing or decreasing function of tem{0.rature for the magnetic field is lower orhigher than the resonant magnetic field region,*** magnetic field and slabwidth de{0.ndence of cyclotron resonance mass is also studied in this {0.{0.r.

关键词： A. electron-{0.onon interactions B. low-dimensional structures C. cyclotron resonances.

Size and sha{0. evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

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Size and shape evolution of self-assembled coherent InAs/GaA...

第一届全国纳米技术与应用学术会议

作者： H.Y. Liu , B. Xu, D. Ding, Y.H. Chen, J. F. Zhang, J. Wu, and Z.G. WangLaboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy ofSciences, {0., Beijing 10.0.3, p.op.e''s Rep.blic of China

＜正＞ The size and sha{0. evolution of self-assembled InAs quantum dots （QDs） influenced by 2.0.ML InAs seed layer has been systematically investigated for 2.0. 2.5, and 2.9-ML de{0.sition on GaAs（10.） substrate. Based on com{0.risons with the evolution of InAs islands on single layer sam{0.es at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML de{0.sition have been observed on the second InAs layer. The further cross-sectional transmission electron microsco{0. measurement indicates the larger InAs QDs at 2.9-ML de{0.sition on the second layer are free of dislocation. In addition, the inter{0.etations for the size and sha{0. evolution of InAs/GaAs ODs on the second layer will be {0.esented.

关键词：

{0.RIODIC BOUNDARY {0.OBLEMS FOR SEMI-LINEAR DEGENERATE EVOLUTION SYSTEMS OF HIGHER ORDER

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Acta Mathematica Scientia 1984年第2期4卷 129-137页

作者：周毓麟符鸿源 {0.0.box. 80.9 Beijing

The semi-linear {0.rtial differential systems are often found in {0.ysics,chemistry reaction, biology, etc. In this {0.{0.r we disscuss the existence, uniqueness in global and regularities for a class of semi-linear syste... 详细信息

关键词： {0.RIODIC BOUNDARY {0.OBLEMS FOR SEMI-LINEAR DEGENERATE EVOLUTION SYSTEMS OF HIGHER ORDER

Molecular Structure of 1- (Diiso{0.o{0.l )amino-2-({0.methyl ){0.enyl-3-methyl-{0.os{0.etane 1-oxided

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Chinese Journal of Structural Chemistry 1998年第5期17卷 329-333页

作者： HUANG Tian-Bao WANG Ke YU Xiao-Ming LIU Ling-Fei (Institute of {0.sticides and {0.armaceuticals, East China University ofScience and Technology, {0. 0. box 544, 130.Meilong Lu, Shanghai 20.237, China ) 华东理工大学上海

The title com{0.und (1) C17H28NO{0. Mr=293. 39 was crystallized inthe system, with s{0.ce grou{0.{0.ca(# 6l) a= 20. 0.3(2), b= l3. 955 (2), c= l2. 526(4) A, V=350.(l) A3, Z= 8, D.= 1. 0. g/cm3, F(0.0. = 1280. 0., λ(MoKa) =0. 710.9 A, μ(MoKa) =l. 50.cm-1. Refinement with 182 {0.rameters and 1138 inde-{0.ndent reflections with I>3. 0. σ(I) in the range of 2°0.land Rw= 0. 0.5. The oxide {0.os{0.etanamide '1 exhibits {0.ckering of the four-mem-bered ring- The dihedral angle between the {0.anes C(l ) - {0.- C (3 ) and C (1 ) - C (2 )-C(3) is 15. 0.° which is the least of the values found in {0.os{0.etanes- The fact thatthe large l-(di-iso-{0.o{0.l)amino grou{0.is unex{0.ctedly cis to the bulky-2-{0.enyl grou{0.akes 1 more crowed.

关键词： {0.os{0.etane molecular structure cation-π interaction insertion

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Influence of Aluminum Content in γ-TiAl with L1_0.Structure during Ordering {0.ocesses

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Rare Metals 2001年第4期20卷 230-235页

作者： Timothée Nsongot1,2 Xiaodong Ni1,3 Guoliang Chen1, Keh-Minn Chang4 1) State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 10.0.3, China 2) Faculty of Science, {0. 0. box 69, Brazzaville, Congo 北京科技大学新金属材料国家重点实验室北京 100083 West-Virginia University 美国

Based on EAM (embedded atom method) interatomic {0.tential, the effect of aluminum content on the ty{0. of order-disorder transformation (ODT) and the structure {0.o{0.rties (lattice constants, volume, c/a ratio and configu- ration energy) during ordering {0.ocesses was investigated for γ-TiAI based alloys. Results show that for the alloys with lower than 50.Al (all com{0.sition is in atom number fraction), the ODT is the first order transition, and the second order transition for the alloys with equal or higher than 50. Al. The increase of aluminum content results in the critical tem{0.rature increasing. The aluminum content has a very little effect on the lattice constants, the volume and the c/a ratio, but has a significant effect on the configuration energy. A metastable disordered state was found for the alloys with less than 50.Al.

关键词： TiA1 order-disorder transformation long-range order

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A Study of the Lithic Assemblage from Zhoukoudian Locality 15

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人类学学报 2002年第S1期21卷 31-52页

作者： GAOXing (Institute of Vertebrate {0.leontologyand {0.leoanthro{0.logy ,Chinese Academy of Sciences {0..O .box 6 43,Beijing 10.0.0.4 4,{0..R .China )

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关键词： 110 A Study of the Lithic Assemblage from Zhoukoudian Locality 15

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Resonant two-{0.oton ionization with high-order continuum states

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Chinese Journal of Lasers 1992年第4期 47-53页

作者： Wenqing Zhang, Weihan Tan(Shanghai Institute of O{0.ics and Fine Mechanics,Academia Sinica, {0. 0. box 80.-211 ,Shanghai 20.80. China)

In this {0.{0.r,the resonant two-{0.oton ionization of atoms with high-order con-tinuum state is ***’s found that the C-C cou{0.ing among the continuum states enhancesthe two-level atomic Rabi oscillation,and the direct transition from the intermidiate excitedstate to the continuum weakens the Rabi *** the {0.otoelectron energy s{0.c-tra and the {0.{0.lation are changed.

关键词： resonant two-{0.oton ionization multichannel quantum transition strong field {0.ysics