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2010 The 2nd International Conference on Industrial Mechatronics and Automation (ICIMA 2010)

作者： Danfu Xu Institute of semiconductor CAS Beijing China

The finite element software ABAQUS used for thermal properties simulation of SQW semiconductor lasers is *** ABAQUS is applied for simulation of transient thermal distribution of 808nm SQW semiconductor lasers driven ... 详细信息

关键词： semiconductor laser ABAQUS

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Spin-orbit coupling effects on the in-plane optical anisotropy of semiconductor quantum wells

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Chinese Physics B 2014年第1期23卷 458-465页

作者：俞命玲陈涌海赖云锋程树英 College of Physics and Information Engineering and Institute of Micro/Nano Devices and Solar Cells Fuzhou University Fuzhou 350108 China Key Labora tory of semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

We theoretically study the influence of the spin–orbit coupling(SOC) on the in-plane optical anisotropy(IPOA) induced by in-plane uniaxial strain and interface asymmetry in(001) GaAs/AlGaAs quantum wells(QWs) with different well width. It is found that the SOC has more significant impact on the IPOA for the transition of the first valence subband of heavy hole to the first conduction band(1H1E) than that of 1L1E. The reason has been discussed. The IPOA of(001) InGaAs/InP QWs has been measured by reflectance difference spectroscopy, whose amplitude is about one order larger than that of GaAs/AlGaAs QWs. The anisotropic interface potential parameters of InGaAs/InP QWs are also determined. The influence of the SOC effect on the IPOA of InGaAs/InP QWs when the QWs are under tensile, compressive or zero biaxial strain are also investigated in theory. Our results demonstrate that the SOC has significant effect on the IPOA especially for semiconductor QWs with small well width, and therefore cannot be ignored.

关键词： spin–orbit coupling in-plane optical anisotropy InGaAs/InP quantum well GaAs/AlGaAs quantum well

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SCH-SQW semiconductor Lasers

SCH-SQW Semiconductor Lasers

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Photonics Asia 2004;Optics and Lasers

作者： WANG Yuxia1 ,WANG Xiaohua, ZHONG Gang, LIU Chunling State Key Laboratory Of High Power semiconductor Lasers , Changchun University Of Science And Technology 7083 Weixing RD Changchun 130022 China

In this paper ,We have designed a laser structure with separate confinement single quantum well (SCH-SQW )and have grown the laser structure by MOCVD .Moreover we have also fabricated broad area stru

关键词： SCH-SQW structure CW Output Power, MOCVD InGaAs/AlGaAs/GaAs Ohmic contact Ti/Pt/Au Lasing wavelength, Optical-electric conversion efficiency, Threshold current density, Cavity films

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ELECTRON AND HOLE TRANSPORT THROUGH DILUTED MAGNETIC semiconductor JUNCTIONS

ELECTRON AND HOLE TRANSPORT THROUGH DILUTED MAGNETIC SEMICON...

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第8届国际材联电子材料国际研讨会

作者： Kai Chang J. B. Xia H. B. WuNational Key Lab for Superlattices and Microstructures Inst. of semiconductor CAS P. 0. Box 912 Beijing 100083. China

＜正＞ The electron and hole transport through diluted magnetic semiconductor （DMS） junctions is investigated theoretically within the framework of the single and multi-band effective mass theory. In the ballistic regime,the tunneling magnetoresistance （TMR） of electron oscillates with increasing magnetic field at low temperature, An interesting beating pattern in TMR and spin polarization is found for different nonmagnetic semiconductor/DMS double barrier structures which arises from an interplay between the spin-up and

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Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors

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Chinese Physics B 2016年第3期25卷 362-365页

作者：宋庆文汤晓燕何艳静唐冠男王悦湖张艺蒙郭辉贾仁需吕红亮张义门张玉明 School of Advanced Materials and Nanotechnology Xidian University Xi'an 710071 China Key Laboratory of Wide Band Gap semiconductor Materials and Devices Xidian University Xi'an 710071 China

In this paper, the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors （MOSF- FETs） have been fabricated and characterized. A sandwich- （nitridation-oxidation-nitridation） type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H-SiC/SiO2 were examined by the measurement of HF l-V, G-V, and C-V over a range of frequencies. The ideal C-V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H-SiC was reduced to 2 x 1011 ***-2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak field- effect mobility is about 32.5 cm2.V-1 .s-1, and the maximum peak field-effect mobility of 38 cm2-V-1 .s-1 was achieved in fabricated lateral 4H-SiC MOSFFETs.

关键词： metal-oxide-semiconductor field-effect transistors 4H-SiC field-effect mobility oxidation pro-cess

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维普期刊数据库

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Theoretical Analysis of 980nm High Power Vertical External-cavity Surface-emitting semiconductor Laser （VECSEL）

Theoretical Analysis of 980nm High Power Vertical External-c...

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20th Congress of the International Commission for Optics

作者： He Chun-fenga b Lu Guo-guanga b Shan Xiao-nana b Sun Yan-fang a b Li Tea b Qin Lia Yan Chang-linga c Ning Yong-qiang a Wang Li-juna (a . Lab. of Excited State Processes Chinese Academy of Sciences Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Science Changchun 130033 China) (b. Graduate School of the Chinese Academy of Sciences Beijing 130039 China) (c. Changchun University of Science and Technology State Key Lab of High Power semiconductor Laser ChangChun 130021 China)

By using bottom-emitting structure, we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer

关键词： Diode laser pumped vertical cavity surface emitting laser external cavity.

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安森美半导体基于安防应用的模拟方案

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传感器世界 2016年第6期22卷 33-38页

作者： on semiconductor 安森美半导体

随着人们生活水平的提高,安全意识也不断增强,对安防产品的需求也不断上升。介绍安森美半导体各类高性能模拟产品,包括DC-DC转换器、线性稳压器、保护器件、驱动马达、逻辑器件及时钟器件等产品在传统安防前后端如摄像机、视频存储、智... 详细信息

随着人们生活水平的提高,安全意识也不断增强,对安防产品的需求也不断上升。介绍安森美半导体各类高性能模拟产品,包括DC-DC转换器、线性稳压器、保护器件、驱动马达、逻辑器件及时钟器件等产品在传统安防前后端如摄像机、视频存储、智能交通、行车记录仪等和新兴安防领域如机器视觉、无人机等的典型应用和系统结构框图。