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Ultrafast reconfigurable direct charge trapping devices based on few-layer MoS₂

CHINESE PHYSICS B 2024年第12期33卷 127201-127201页

作者： Gao, Hui Liu, Xuanye Song, Peng Wei, Chijun jiazila, nuertai Sun, Jiequn Wu, Kang Guo, Hui Yang, Haitao Boa, Lihong Gao, Hong-Jun Chinese Acad Sci Inst Phys Beijing 100190 Peoples R China Univ Chinese Acad Sci Sch Phys Sci Beijing 100049 Peoples R China Univ Chinese Acad Sci CAS Key Lab Vacuum Phys Beijing 100049 Peoples R China Hefei Natl Lab Hefei 230088 Peoples R China

Charge trapping devices incorporating 2D materials and high-kappa dielectrics have emerged as promising candidates for compact, multifunctional memory devices compatible with silicon-based manufacturing processes. However, traditional charge trapping devices encounter bottlenecks including complex device structure and low operation speed. Here, we demonstrate an ultrafast reconfigurable direct charge trapping device utilizing only a 30 nm-thick Al2O3 trapping layer with a MoS2 channel, where charge traps reside within the Al2O3 bulk confirmed by transfer curves with different gate-voltage sweeping rates and photoluminescence (PL) spectra. The direct charging tapping device shows exceptional memory performance in both three-terminal and two-terminal operation modes characterized by ultrafast three-terminal operation speed (similar to 300 ns), an extremely low OFF current of 10-14 A, a high ON/OFF current ratio of up to 107, and stable retention and endurance properties. Furthermore, the device with a simple symmetrical structure exhibits VD polarity-dependent reverse rectification behavior in the high resistance state (HRS), with a rectification ratio of 105. Additionally, utilizing the synergistic modulation of the conductance of the MoS2 channel by VD and VG, it achieves gate-tunable reverse rectifier and ternary logic capabilities.

关键词： charge trapping memory two-dimensional materials reconfigurable device reverse rectification 72.20.Jv 73.20.Hb 73.40.Ei 73.40.Qv

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A universal resist-assisted metal transfer method for 2D semiconductor contacts

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CHINESE PHYSICS B 2024年第12期33卷 127302-127302页

作者： Liu, Xuanye Li, Linxuan Wei, Chijun Song, Peng Gao, Hui Wu, Kang jiazila, nuertai Sun, Jiequn Guo, Hui Yang, Haitao Zhou, Wu Bao, Lihong Gao, Hong-Jun Chinese Acad Sci Inst Phys Beijing 100190 Peoples R China Univ Chinese Acad Sci Sch Phys Sci Beijing 100049 Peoples R China Hefei Natl Lab Hefei 230088 Peoples R China

With the explosive exploration of two-dimensional (2D) semiconductors for device applications, ensuring effective electrical contacts has become critical for optimizing device performance. Here, we demonstrate a universal resist-assisted metal transfer method for creating nearly free-standing metal electrodes on the SiO2/Si substrate, which can be easily transferred onto 2D semiconductors to form van der Waals (vdW) contacts. In this method, polymethyl methacrylate (PMMA) serves both as an electron resist for electrode patterning and as a sacrificial layer. Contacted with our transferred electrodes, MoS2 exhibits tunable Schottky barrier heights and a transition from n-type dominated to ambipolar conduction with increasing metal work functions, while InSe shows pronounced ambipolarity. Additionally, using alpha-In(2)Se(3 )as an example, we demonstrate that our transferred electrodes enhance resistance switching in ferroelectric memristors. Finally, the universality of our method is evidenced by the successful transfer of various metals with different adhesion forces and complex patterns.

关键词： metal electrode transfer 2D materials Schottky barrier ambipolar memristor

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h-BN-assisted Metal Contact Transfer to InSe for Two-Dimensional Multifunctional Electronic Devices

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Chinese Physics Letters 2024年第12期41卷 210-225页

作者： Chijun Wei nuertai jiazila Xuanye Liu Peng Song Hui Gao Jiequn Sun Lihong Bao Xiao Lin Hong-Jun Gao School of Physical Sciences and CAS Key Laboratory of Vacuum Physics University of Chinese Academy of SciencesBeijing 100190China Beijing National Center for Condensed Matter Physics and Institute of Physics Chinese Academy of SciencesBeijing 100190China Hefei National Laboratory Hefei 230088China

Metal contacts to two-dimensional(2D)semiconductors are crucial for determining the electrical performance of electronic ***,traditional three-dimensional metal deposition processes cause damage to 2D semiconductors and considerable Fermi-level-pinning *** this study,a hexagonal boron nitride(h-BN)-assisted transfer method was proposed for transferring metal contacts to few-layered InSe for fabricating 2D functional electronic *** the transferred Pt electrodes as the contact,p-type dominated ambipolar conduction behavior with the hole Schottky barrier height(SBH)approaching 0meV was observed in field-effect transistors(FETs)comprising multilayered *** on this phenomenon,several InSe homojunctions were fabricated using a dual-gate modulating method such as p-p,n-n,p-n,and *** InSe p-n homojunctions,a current rectification ratio of over 104 and optoelectronic detection capabilities were ***,a complementary metal-oxide-semiconductor(CMOS)inverter with an ultra-high voltage gain exceeding 60 at VDD=−1V was *** proposed h-BN-assisted metal contact transfer method can be easily extended to other 2D semiconductors for fabricating complementary electronic and optoelectronic devices.

关键词： complementary semiconductors exceeding

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