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Long-Time Relaxation and Residual Conductivity in GaP Irradiated by High-Energy Electrons

Journal of Modern Physics 2014年第1期5卷 51-54页

作者： Hrant Yeritsyan norik.Grigoryan Vachagan Harutyunyan Eleonora Hakhverdyan Valeriy Baghdasaryan A. Alikhanian National Science Laboratory Yerevan Physics Institute Yerevan Armenia

This paper presents the results of a study of long-time relaxation (LR) and residual conductivity in n-type gallium phosphide (GaP) crystals irradiated by 50 MeV electrons. A manifold increase in photosensitivity and quenching of residual conductivity was found as a result of irradiation. It is shown that LR in GaP is due to disordered regions (generated by electron irradiation) which have conductivity close to self one. The Fermi level in the disordered regions is determined by which is located deep in the forbidden band (Ее - 1.0 eV). LR effect is mainly explained by a spatial separation of electrons and holes, recombination of which is prevented by potential barriers. The observed increase in conductivity is associated with the increase in the concentration of minority carriers as well as with increase of the Hall mobility at the sample illumination.

关键词： Long-Time Relaxation (LR) Residual Conductivity (RC) Photoconductivity Irradiation Gallium Phosphide

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先进的新型20辊轧机—KZR

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上海冶金设计 1995年第1期9卷 57-62页

作者： norik.T 余辉

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Scattering of Conduction Electrons on the Static Deformation Raised by Irradiation in n-GaP Crystals

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Journal of Modern Physics 2015年第13期6卷 1935-1941页

作者： norik.Е. Grigoryan Hrant N. Yeritsyan Vachagan V. Harutyunyan Narek A. Hakobyan Eduard A. Aleksanyan Vahan A. Sahakyan A. Alikhanian National Science Laboratory Yerevan Physics Institute Yerevan Armenia National Institute of Metrology Yerevan Armenia

Study of spectral dependences of absorption coefficient at the region of absorption by free carriers shows that the introduction of radiation defects in n-GaP crystals leads to the appearance of additional scattering besides of traditional ones. A new scattering mechanism on “frozen” phonons (deformation localized near the radiation defects) is suggested and its behavior in experimental and theoretical aspects taking into account Х1с-Х3с transitions at the scattering process has been studied. It was shown that the increase of “frozen” phonons’ concentration results to the growth of this mechanism contribution in the whole scattering and the absorption coefficient by free carriers is described approximately by low α ~ ω-r, where -1/2 ≤ r ≤ 7/2. Suggested scattering mechanism allows explaining qualitatively the decrease of r. It was established that the dis- ordered by irradiation region effectively decreases the concentration of free carriers, but being a region of increased resistivity, it influences the scattering slightly even at the actual quantum region .

关键词： Free Carriers Absorption Irradiation Scattering Mechanism Deformation Potential Phonon Gallium Phosphide

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夏日耀眼“in”指南

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食品与药品 2005年第6B期7卷 63-63页

作者： norik

轻柔薄纱让你在这个夏天越发迷人，可是那些美丽的衣杉总将我们的秘密泄露在外？浑圆的肩膀、精壮的腰身、松弛的小腹……怎样才能重获紧致的肌肤？其实方法很简单。

关键词：指南 in 夏日

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