This paper gives a statistical view about important contributions and advances on semiconductor metal oxide (SMO) compounds based gas sensors developed to detect the air pollutants such as liquefied petroleum gas (...
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This paper gives a statistical view about important contributions and advances on semiconductor metal oxide (SMO) compounds based gas sensors developed to detect the air pollutants such as liquefied petroleum gas (LPG), H2S, NH3, CO2, acetone, ethanol, other volatile compounds and hazardous gases. Moreover, it is revealed that the alloy/composite made up of SMO gas sensors show better gas response than their counterpart single component gas sensors, i.e., they are found to enhance the 4S characteristics namely speed, sensitivity, selectivity and stability. Improvement of such types of sensors used for detection of various air pollutants, which are reported in last two decades, is highlighted herein.
We report here the influence of thickness on the photosensing properties of copper sulfide (CuS) thin films. The CuS films were deposited onto glass substrate by using a simple and cost effective chemical bath deposit...
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We report here the influence of thickness on the photosensing properties of copper sulfide (CuS) thin films. The CuS films were deposited onto glass substrate by using a simple and cost effective chemical bath deposition method. The changes in film thickness as a function of time were monitored. The films were characterized using X-ray diffraction technique (XRD), field emission scanning electron microscopy (FE-SEM), optical measurement techniques and electrical measurement. X-ray diffraction results indicate that all the CuS thin films have an orthorhombic (covellite) structure with preferential orientation along (113) direction. The intensity of the diffraction peaks increases as thickness of the film increases. Uniform deposition having nanocrystalline granular morphology distributed over the entire glass substrate was observed through FE-SEM studies. The crystalline and surface properties of the CuS thin films improved with increase in the film thickness. Transmittance (except for 210 nm thick CuS film) together with band gap values was found to decrease with increase in thickness. I-V measurements under dark and illumination condition show that the CuS thin films give a good photoresponse.
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