检索结果-南通市图书馆

Photo Acoustic Energy Applications for the Detection of Human Arterial Blockages via Multiple Skin/Bone Layers, a Non-Invasive Approach

引用

World Journal of Cardiovascular Diseases 2017年第8期7卷 251-270页

作者： Monika Kakani neeraj rathi Ahdy Helmy Ashok Kumar Thella M. D. James Rizkalla Paul Salama Maher E. Rizkalla Department of Electrical and Computer Engineering Indiana University Purdue University Indianapolis (IUPUI) Indianapolis USA VA Hospital Indiana University School of Medicine Indianapolis USA Baylor University Medical Center (BUMC) Dallas USA Integrated Nanosystems Development Institute IUPUI Indianapolis USA Richard G. Lugar Center for Renewable Energy IUPUI Indianapolis USA

The impact of arterial narrowing/blocking caused by plaque buildup in arteries leads to many life-threatening consequences. This is recognized as a cause in heart attacks and peripheral vascular disease. Diagnosing the illness is only feasible after symptoms have presented to the patient. Currently, the standard for visualizing coronary arteries is through angiography, which may have complications, and impact on the healthcare system. Furthermore, cardiac catheterization may also places high health risks, given its overall invasiveness. Cardiac arrhythmias, infection, and contrast dye nephrotoxicity are recognized complications within this process. Therefore, a noninvasive approach may have potentials to reduce patient complications, finances surrounding healthcare, and more efficient patient care through earlier screening and diagnosing. This research addresses a new approach using photoacoustic (PA) imaging. The transmission properties of atherosclerosis within walls of arteries, can be exploited using photo acoustics, to better visualize and characterize the degree and severity of atherosclerosis. The delivered energy is absorbed by components of the vascular tissue converted into heat, leading to transient thermos elastic expansion, which creates an acoustic emission. The thermal response was analyzed for its fall and recovery times that are attributed to the artery fat type. The control parameters, including the frequency, penetration depth, energy levels, and tissue layer sizes, for multilayered structures were considered. The structures investigated were fatty infiltrate within the artery, blood, bones, and skin, within frequency range from 1 MHz to 3 MHz, and typical tissue sizes in the milli to centimeter range. As high as 14 MPas in the acoustic pressure at 1 MHz, resulted in temperature difference of up to 3.4 K. When the operating frequency was altered to 2 MHz, the temperature changed to 23 K. Furthermore, when the frequency was changed to 3 MHz, the te

关键词： Acoustic Thermal Cardiovascular Diagnosis MEMS/NEMS COMSOL Multilayers Non-Invasive

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Analysis of 8T SRAM Cell at Various Process Corners at 65 nm Process Technology

引用

Circuits and Systems 2011年第4期2卷 326-329页

作者： Shilpi Birla neeraj Kumar Shukla Kapil rathi Rakesh Kumar Singh Manisha Pattanaik 不详

In Present scenario battery-powered hand-held multimedia systems become popular. The power consumption in these devices is a major concern these days for its long operational life. Although various techniques to reduce the power dissipation has been developed. The most adopted method is to lower the supply voltage. But lowering the Vdd reduces the gate current much more rapidly than the sub-threshold current and degrades the SNM. This degraded SNM further limits the voltage scaling. To improve the stability of the SRAM cell topology of the conventional 6T Static Random Access Memory (SRAM) cell has been changed and revised to 8T and 10T cell, the topologies. This work has analyzed the SRAM’s Static Noise Margin (SNM) at 8T for various process corners at 65nm technology. It evaluates the SNM along with the write margins of the cell along with the cell size of 8T SRAM bit-cell operating in sub-threshold voltage at various process corners. It is observed that an 8T cell has 13 % better write margin than conventional 6T SRAM cell. This paper analyses the dependence of SNM of SRAM memory cell on supply voltage, temperature, transistor sizing in 65nm technology at various process corners (TT, SS, FF, FS, and SF).

关键词： SNM Sub-Threshold Current Gate Current Process Corners

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：