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FeNi@CNS nanocomposite as an efficient electrochemical catalyst for N_(2)-to-NH_(3) conversion under ambient conditions

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Journal of Materials Science & Technology 2022年第8期103卷 59-66页

作者： Tayiba ilyas Fazal Raziq nasir ilyas Liuxin Yang Sharafat Ali Amir Zada Syedul Hasnain Bakhtiar Yong Wang Huahai Shen Liang Qiao School of Physics University of Electronic Science and Technology of ChinaChengdu 610054China State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and EngineeringTsinghua UniversityBeijing 10084China Department of Chemistry Abdul Wali Khan University of MardanMardanKPK 23200Pakistan Laboratory of Living Materials at the State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of TechnologyWuhan 430070China Institute of Nuclear Physics and Chemistry Chinese Academy of Engineering PhysicsMianyang 621900China

The electrocatalytic nitrogen reduction reaction(NRR)has emerged as a promising renewable energy source and a feasible strategy as an alternative to Haber-Bosch ammonia(NH_(3))synthesis.However,finding an efficient and cost-effective robust catalyst to activate and cleave the extremely strong triple bond in nitrogen(N_(2))for electrocatalytic NRR is still a challenge.Herein,a FeNi@CNS nanocomposite as an efficient catalyst for N_(2) fixation under ambient conditions is designed.This FeNi@CNS nanocomposite was prepared by a simple water bath process and post-calcination.The FeNi@CNS is demonstrated to be a highly efficient NRR catalyst,which exhibits better NRR performance with exceptional Faradaic efficiency of 9.83%and an NH_(3) yield of 16.52μg h^(−1) cm^(−2) in 0.1 M Na_(2)SO_(4) aqueous solution.Besides,high stability and reproducibility with consecutive 6 cycles for two hours are also demonstrated throughout the NRR electrocatalytic process for 12 h.Meanwhile,the FeNi@CNS catalyst encourages N_(2) adsorption and activation as well as effectively suppressing competitive HER.Therefore,this earth-abundant FeNi@CNS catalyst with a subtle balance of activity and stability has excellent potential in NRR industrial applications.

关键词： Electrocatalytic nitrogen reduction Transition-metal alloy FeNi@CNS catalyst N_(2)fixation to NH_(3)

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Controllable resistive switching of STO:Ag/SiO2-based memristor synapse for neuromorphic computing

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Journal of Materials Science & Technology 2022年第2期97卷 254-263页

作者： nasir ilyas Jingyong Wang Chunmei Li Hao Fu Dongyang Li Xiangdong Jiang Deen Gu Yadong Jiang Wei Li School of Optoelectronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu 610054China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China School of Physics University of Electronic Science and Technology of ChinaChengdu 610054China

Resistive random-access memory(RRAM)is a promising technology to develop nonvolatile memory and artificial synaptic devices for brain-inspired neuromorphic computing.Here,we have developed a STO:Ag/SiO_(2) bilayer based memristor that has exhibited a filamentary resistive switching with stable endurance and long-term data retention ability.The memristor also exhibits a tunable resistance modulation under positive and negative pulse trains,which could fully mimic the potentiation and depression behavior like a bio-synapse.Several synaptic plasticity functions,including long-term potentiation(LTP)and long-term depression(LTD),paired-pulsed facilitation(PPF),spike-rate-dependent-plasticity(SRDP),and post-tetanic potentiation(PTP),are faithfully implemented with the fabricated memristor.Moreover,to demonstrate the feasibility of our memristor synapse for neuromorphic applications,spike-timedependent plasticity(STDP)is also investigated.Based on conductive atomic force microscopy observations and electrical transport model analyses,it can be concluded that it is the controlled formation and rupture of Ag filaments that are responsible for the resistive switching while exhibiting a switching ratio of~10;along with a good endurance and stability suitable for nonvolatile memory applications.Before fully electroforming,the gradual conductance modulation of Ag/STO:Ag/SiO_(2)/p^(++)-Si memristor can be realized,and the working mechanism could be explained by the succeeding growth and contraction of Ag filaments promoted by a redox reaction.This newly fabricated memristor may enable the development of nonvolatile memory and realize controllable resistance/weight modulation when applied as an artificial synapse for neuromorphic computing.

关键词： Ag/STO:Ag/SiO2/p++-Si memristor Filamentary resistive switching Resistance/weight modulation Synaptic plasticity Normomorphic computing

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An oxide-based heterojunction optoelectronic synaptic device with wideband and rapid response performance

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Journal of Materials Science & Technology 2022年第28期123卷 159-167页

作者： Chunmei Li Jinyong Wang Dongyang Li nasir ilyas Zhiqiang Yang Kexin Chen Peng Gu Xiangdong Jiang Deen Gu Fucai Liu Yadong Jiang Wei Li School of Optoelectronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu 611731China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 611731China Key Laboratory of Information Materials of Sichuan Province and School of Preparatory Education Southwest Minzu UniversityChengdu 610041China

With the rapid development of science and technology,the emergence of new application scenarios,such as robots,driverless vehicles and smart city,puts forward high requirements for artificial visual systems.Optoelectronic synaptic devices have attracted much attention due to their advantages in sensing,memory and computing integration.In this work,via band structure engineering and heterostructure designing,a heterojunction optoelectronic synaptic device based on Cu doped with n-type SrTiO_(3)(Cu:STO)film combined with p-type CuAlO_(2)(CAO)thin film was fabricated.It is found surprisingly that the optoelectronic device based on Cu:STO/CAO p-n heterojunction exhibits a rapid response of 2 ms,and that it has a wideband response from visible to near-infrared(NIR)region.Additionally,a series of important synaptic functions,including excitatory postsynaptic current(EPSC),paired-pulse facilitation(PPF),shortterm potentiation(STP)to long-term potentiation(LTP)transition,learning experience behavior and image sharpening,have been successfully simulated on the device.More importantly,the performance of the device remains still stable and reliable after several months which were stored at room temperature and atmospheric pressure.Based on these advantages,the optoelectronic synaptic devices demonstrated here provide great potential in the new generation of artificial visual systems.

关键词： Cu:STO/CAO heterojunction Optoelectronic synaptic devices Vis to NIR wideband Rapid response Artificial visual system

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Penumbral Dose Characteristics of Physical and Virtual Wedge Profiles

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International Journal of Medical Physics, Clinical Engineering and Radiation Oncology 2017年第2期6卷 216-224页

作者： Salman Farrukh nasir ilyas Muhammad Naveed Abdul Haseeb Muhammad Bilal Dr Najamuddin Javed Iqbal Atomic Energy Medical Centre JPMC Karachi Pakistan Institute of Space and Planetary Astrophysics University of Karachi Karachi Pakistan

Purpose: Both physical and virtual wedges are used in radiotherapy to get uniform and desired dose distribution in clinical setting. All linear accelerators of different venders have computer controlled dynamic wedges called virtual wedge filters. Penumbra is one of the important photon beam characteristics needed to be understood in radiation therapy at the time of commissioning of Treatment Planning system (TPS) as well as applying various treatment planning algorithms in clinical applications. In this study we measured the dose profiles of open field, physical wedges (PW) and virtual wedges (VW) for energies (6 MV & 15 MV), various field sizes (10 × 10, 15 × 15 & 20 × 20 cm2), depths (dmax, 10 cm, 20 cm) and wedge angles (15°, 30°, 45° and 60°). From beam profile we calculated the penumbral width for open and wedged fields. The study was carried out on Siemens ONCOR IMRT Plus linear accelerator. The obtained penumbral width of PW and VW of all wedge angles was subtracted from the penumbral width of open field. The deviations in penumbral width were compared and statistically analyzed as a function of energy, depth, field size and wedge angles. Material and Method: The penumbral width was measured using IBA CC13 ion chamber in IBA Blue phantom (a 3D water phantom). The source to surface distance (SSD) during our study was kept 100cm and measurement was taken for 10 × 10, 15 × 15, 20 × 20 cm2 field sizes and for 15°, 30°, 45°, 60° wedges. These measurements were taken for both 6 MV and 15 MV photon energies. Virtual wedge profiles were acquired using LDA-99 linear detector array (IBA, Germany). The deviations in penumbral width for both PW and VW were calculated by subtracting the penumbral width from open field penumbral width in gun direction (in-plane) and deviation in VW penumbral width, and were obtained by subtracting the open field penumbral width in left-right direction (cross-plane) direction. The measured deviations were plotted for both PW and VW. Statistics on the measured deviations was performed by

关键词： Physical Wedge Virtual Wedge Penumbra and Deviations

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非晶硅银薄膜的飞秒激光辐照研究

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中国激光 2019年第11期46卷 200-205页

作者：李东阳 ilyas nasir 宋宇浩袁余涵李伟电子科技大学光电科学与工程学院四川成都610054 西南民族大学信息材料四川省重点实验室四川成都610041 电子科技大学电子薄膜与集成器件国家重点实验室四川成都610054

采用磁控共溅射方法制备非晶硅银(a-Si∶Ag)薄膜,并对其进行飞秒激光辐照;采用扫描电子显微镜、拉曼光谱仪、积分球、半导体性能测试仪等,对辐照前后薄膜的表面形貌、微观结构以及光电性能等进行表征。结果表明:当辐照能量为300 mJ/cm^2... 详细信息

采用磁控共溅射方法制备非晶硅银(a-Si∶Ag)薄膜,并对其进行飞秒激光辐照;采用扫描电子显微镜、拉曼光谱仪、积分球、半导体性能测试仪等,对辐照前后薄膜的表面形貌、微观结构以及光电性能等进行表征。结果表明:当辐照能量为300 mJ/cm^2时,a-Si∶Ag薄膜表面无明显的刻蚀痕迹,薄膜中有纳米晶硅颗粒生成,薄膜中的Ag纳米晶长大;当辐照能量为600 mJ/cm^2时,薄膜表面出现明显的刻蚀痕迹,Ag纳米晶进一步长大,然而,产生的纳米晶硅颗粒的尺寸却没有变化;被飞秒激光辐照后,a-Si∶Ag薄膜比辐照前的电阻率更小,同时,薄膜对可见-近红外波段的入射光产生了反射减弱现象。研究结果对基于a-Si∶Ag薄膜的忆阻神经突触器件性能的改善具有积极意义。

关键词：薄膜微结构飞秒激光光电性能

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