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Two-dimensional materials for future information technology: status and prospects

2003年纳米和表面科学与技术全国会议

作者： mu wang laboratory of solid state microstructures and department of physics, nanjing university, nanjing 210093 and international center for quantum structures, chinese academy of sciences, beijing 100080

Self-organization of microstructures in interfacial growth has been intensively studied in the past decades. Ordered structures can be spontaneously generated in the interfacial growth by stress-induced instability. It is well-known when a crystalline layer is coherently adsorbed on a substrate with different lattice parameters, the mismatch energy is high and the system tends to escape to a state with lower energy. Instead of generating defects, such as misfit dislocations, the strained film can be relaxed by surface deformation, where periodic hills and

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Science China(Information sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong wang Hao wang Haomin wang Jialong wang Junyong wang Wenhui wang Xingjun wang Yeliang wang Yuwei wang Zhenyu wang Yao WE... School of Electronic Science and Engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications state Key laboratory of Infrared physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of physics and Key Lab of quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou laboratory state Key laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin laboratory department of Applied physics The Hong Kong Polytechnic University Key laboratory for Micro-Nano physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University state Key laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key laboratory of Nanophotonic Materials and Devices & Key laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key laboratory of quantum state Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

Intercalation and hybrid heterostructure integration of two-dimensional atomic crystals with functional organic semiconductor molecules

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Nano Research 2020年第11期13卷 2917-2924页

作者： Wen He Han Zang Songhua Cai Zhangyan mu Cheng Liu Mengning Ding Peng wang Xinran wang Key laboratory of Mesoscopic Chemistry School of Chemistry and Chemical EngineeringNanjing UniversityNanjing210093China National laboratory of solid state microstructures Nanjing UniversityNanjing210093China School of Electronic Science and Engineering and Collaborative Innovation center of Advanced microstructures Nanjing UniversityNanjing210093China Jiangsu Key laboratory of Artificial Functional Materials College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093China department of Applied physics The Hong Kong Polytechnic UniversityHung Hom999077KowloonHong KongChina Research center for Environmental Nanotechnology(ReCENT) Nanjing UniversityNanjing210023China

Van der Waals(vdW)integration affords semiconductor heterostructures without constrains of lattice matching and opens up a new realm of functional devices by design.A particularly interesting approach is the electrochemical intercalation of two-dimensional(2D)atomic crystal and formation of superlattices,which can provide scalable production of novel vdW ***,this approach has been limited to the use of organic cations with non-functional aliphatic chains,therefore failed to take the advantage of the vast potentials in molecular functionalities(electronic,photonic,magnetic,etc.).Here we report the integration of 2D crystal(MoS_(2),WS_(2),highly oriented pyrolytic graphite(HOPG),WSe_(2) as model systems)with electrochemically inert organic molecules that possess semiconducting characteristics(including perylene-3,4,9,10-tetracarboxylic dianhydride(PTCDA),pentacene and fullerene),through on-chip electrochemical *** unprecedented long-range spatial feature of intercalation has been achieved,which allowed facile assembly of a vertical MoS_(2)-PTCDA-Si *** intercalated heterostructure shows significant modulation of the lateral transport,and leads to a molecular tunneling characteristic at the vertical *** general intercalation of charge neutral and functional molecules defines a versatile platform of inorganic/organic hybrid vdW heterostructures with significantly extended molecular functional building blocks,holding great promise in future design of nano/quantum devices.

关键词： transition metal dichalcogenide electrochemical intercalation perylene-3,4,9,10-tetracarboxylic dianhydride(PTCDA) organic semiconductor inorganic/organic heterostructure

Dimensionality-driven metal to Mott insulator transition in two-dimensional 1T-TaSe2

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National Science Review 2024年第3期11卷 108-118页

作者： Ning Tian Zhe Huang Bo Gyu Jang Shuaifei Guo Ya-Jun Yan Jingjing Gao Yijun Yu Jinwoong Hwang Cenyao Tang Meixiao wang Xuan Luo Yu Ping Sun Zhongkai Liu Dong-Lai Feng Xianhui Chen Sung-Kwan Mo Minjae Kim Young-Woo Son Dawei Shen Wei Ruan Yuanbo Zhang state Key laboratory of Surface physics New Cornerstone Science Laboratory and Department of PhysicsFudan University Shanghai Qi Zhi Institute Shanghai Research center for quantum sciences Institute for Nanoelectronic Devices and quantum Computing Fudan University Zhangjiang Fudan international Innovation center Fudan University state Key laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology(SIMIT)Chinese Academy of Sciences School of Physical Science and Technology ShanghaiTech University Korea Institute for Advanced Study School of Emerging Technology and department of physics University of Science and Technology of China Advanced Light Source Lawrence Berkeley National Laboratory ShanghaiTech laboratory for Topological physics Key laboratory of Materials physics Institute of Solid State Physics Hefei Institutes of Physical ScienceChinese Academy of Sciences High Magnetic Field laboratory Hefei Institutes of Physical Science Chinese Academy of Sciences Collaborative Innovation Centre of Advanced microstructures Nanjing University department of physics University of Science and Technology of China and Key Laboratory of Strongly Coupled Quantum Matter Physics Chinese Academy of Sciences National Synchrotron Radiation laboratory University of Science and Technology of China

Two-dimensional materials represent a major frontier for research into exotic many-body quantum phenomena. In the extreme two-dimensional limit, electron-electron interaction often dominates over other electronic energy scales, leading to strongly correlated effects such as quantum spin liquid and unconventional *** dominance is conventionally attributed to the lack of electron screening in the third dimension. Here, we discover an intriguing metal to Mott insulator transition in 1T-TaSe2that defies conventional wisdom. Specifically, we find that dimensionality crossover, instead of reduced screening, drives the transition in atomically thin 1T-TaSe2. A dispersive band crossing the Fermi level is found to be responsible for the bulk metallicity in the material. Reducing the dimensionality,however, effectively quenches the kinetic energy of these initially itinerant electrons, and drives the material into a Mott insulating *** dimensionality-driven metal to Mott insulator transition resolves the long-standing dichotomy between metallic bulk and insulating surface of 1T-TaSe2. Our work further reveals a new pathway for modulating two-dimensional materials that enables exploring strongly correlated systems across uncharted parameter space.

关键词： two-dimensional materials 1T-TaSe2 dimensionality crossover metal to Mott insulator transition

Log-periodic quantum oscillations in topological or Dirac materials

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Frontiers of physics 2019年第2期14卷 39-43页

作者： Huichao wang Yanzhao Liu Haiwen Liu Jian wang international center for quantum Materials School of PhysicsPeking UniversityBeijing 100871China Collaborative Innovation center of quantum Matter Beijing 100871China department of Applied physics The Hong Kong Polytechnic UniversityKowloonHong KongChina center for Advanced quantum Studies Department of PhysicsBeijing Normal UniversityBeijing 100875China CAS center for Excellence in Topological quantum Computation University of Chinese Academy of SciencesBeijing 100190China

As a manifestation of the underlying physical nature, quailtum oscillations with the applied magnetic field (B) are one of the most important topics in condensed matter physics. The research history can be tracked to 1930 when Lev Shubnikov and W. J. de Haas observed Shubnikov-de Haas (SdH) oscillations in the magnetoresistance (MR) of bismuth crystals. Since then, researchers have observed quantum oscillations in diverse materials, including metals, metallic compounds, semimetals, semiconductors and even insula tors, as well as in artificial mesoscopic microstructures . Nowadays, quantum oscillation detec ted by magneto transport investigation has been a powerful tool to detect the physical properties in solid-state systems.

关键词： Dirac materials Log-periodic quantum oscillations magnetoresistance (MR)

Tunable optical topological transitions of plasmon polaritons in WTe_(2) van der Waals films

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Light(Science & Applications) 2023年第9期12卷 1807-1817页

作者： Yuangang Xie Chong wang Fucong Fei Yuqi Li Qiaoxia Xing Shenyang Huang Yuchen Lei Jiasheng Zhang Lei mu Yaomin Dai Fengqi Song Hugen Yan state Key laboratory of Surface physics Key Laboratory of Micro and NanoPhotonic Structures(Ministry of Education)and Department of PhysicsFudan University200433 ShanghaiChina Centre for quantum physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE)School of PhysicsBeijing Institute of Technology100081 BeijingChina beijing Key Lab of Nanophotonics&Ultrafine Optoelectronic Systems School of PhysicsBeijing Institute of Technology100081 BeijingChina National laboratory of solid state microstructures Collaborative Innovation Center of Advanced Microstructuresand College of PhysicsNanjing University210093 NanjingChina Atom Manufacturing Institute(AMI) 211805 NanjingChina center for Superconducting physics and Materials National Laboratory of Solid State Microstructures and Department of PhysicsNanjing University211805 NanjingChina

Naturally existing in-plane hyperbolic polaritons and the associated optical topological transitions,which avoid the nano-structuring to achieve hyperbolicity,can outperform their counterparts in artificial *** plasmon polaritons are rare,but experimentally revealed recently in WTe_(2)van der Waals thin *** from phonon polaritons,hyperbolic plasmon polaritons originate from the interplay of free carrier Drude response and interband transitions,which promise good intrinsic ***,tunable in-plane hyperbolic plasmon polariton and its optical topological transition of the isofrequency contours to the elliptic topology in a natural material have not been *** we demonstrate the tuning of the optical topological transition through Mo doping and *** optical topological transition energy is tuned over a wide range,with frequencies ranging from 429 cm^(−1)(23.3 microns)for pure WTe_(2)to 270 cm^(−1)(37.0 microns)at the 50%Mo-doping level at 10 ***,the temperature-induced blueshift of the optical topological transition energy is also revealed,enabling active and reversible ***,the localized surface plasmon resonance in skew ribbons shows unusual polarization dependence,accurately manifesting its topology,which renders a reliable means to track the topology with far-field *** results open an avenue for reconfigurable photonic devices capable of plasmon polariton steering,such as canaling,focusing,and routing,and pave the way for low-symmetry plasmonic nanophotonics based on anisotropic natural materials.

关键词： topological transitions polar

Planckian dissipation and non-Ginzburg-Landau type upper critical field in Bi2201

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Science China(physics,Mechanics & Astronomy) 2023年第3期66卷 147-155页

作者： Qihao Zang Zhengyan Zhu Zuyu Xu Shichao Qi Haoran Ji Yiwen Li Jian wang Huiqian Luo Hua-Bing wang Hai-Hu Wen National laboratory of solid state microstructures and department of physics Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China Research Institute of Superconductor Electronics Nanjing UniversityNanjing 210093China international center for quantum Materials School of PhysicsPeking UniversityBeijing 100871China Institute of physics Chinese Academy of SciencesBeijing 100190China Purple Mountain Laboratories Nanjing 211111China

Resistivity and Hall effect measurements have been carried out on a micro-fabricated bridge of Bi2201 single crystal at low temperatures down to 0.4 K under high magnetic *** superconductivity is crashed by a high magnetic field,the recovered "normal state" resistivity still shows a linear temperature dependence in the low temperature *** with the effective mass and the charge carrier density,we get a linear scattering rate 1/τ=αkBT/h with 0.77 <α <1.16,which gives a strong evidence of the Planckian ***,our results reveal a new type of temperature dependence of the upper critical field,H_(c2)(T)=H*■,which is totally different from the expectation of the Ginzburg-Landau theory,and suggests the existence of uncondensed Cooper pairs above H_(c2)(T) line.

关键词： cuprates scattering rate Planckian dessipation anomalous upper critical field

通过调控范霍夫奇点在外延单层VSe_(2)中诱导出巡游铁磁性

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Science Bulletin 2023年第10期68卷 990-997,M0003页

作者：宗君宇董召阳黄俊伟王开礼汪琪玮孟庆豪田启超邱小东牟浴洋王利任伟谢学栋陈望张永衡王灿李坊森李绍春李建新袁洪涛张翼 National laboratory of solid-state microstructures School of PhysicsNanjing UniversityNanjing 210093China department of Applied physics Nanjing University of Science and TechnologyNanjing 210094China College of Engineering and Applied sciences and National laboratory of solid-state microstructures Nanjing UniversityNanjing 210093China Vacuum Interconnected NanoTech Workstation(Nano-X) Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China Collaborative Innovation center of Advanced microstructures Nanjing UniversityNanjing 210093China

处在费米能级处的范霍夫奇点(van Hove singularity)由于具有发散的态密度特征可以诱导出巡游铁磁性.本文在SrTiO_(3)(111)衬底上外延生长单层VSe_(2)薄膜,并通过调控范霍夫奇点诱导出巡游铁磁性.作者通过角分辨光电子能谱技术直接观测... 详细信息

处在费米能级处的范霍夫奇点(van Hove singularity)由于具有发散的态密度特征可以诱导出巡游铁磁性.本文在SrTiO_(3)(111)衬底上外延生长单层VSe_(2)薄膜,并通过调控范霍夫奇点诱导出巡游铁磁性.作者通过角分辨光电子能谱技术直接观测到了单层VSe_(2)中的范霍夫奇点能带结构.理论计算表明,当该范霍夫奇异点靠近费米能级时,可通过斯通纳(Stoner)不稳定性产生巡游铁磁性.实验上,作者利用SrTiO_(3)(111)在低温下极大增强的介电常数εr,通过界面电荷转移效应调控范霍夫奇点向费米能级处移动,并通过电输运测量观测到了3.3 K的巡游铁磁性转变.此外,通过改变薄膜层厚和更换衬底的方式,作者可以进一步调控界面电荷转移效果和范霍夫奇点的能量位置,并对巡游铁磁性进行调控.这项研究证明了范霍夫奇点可以成为巡游铁磁性的调控自由度,并拓展了二维磁体在未来电子信息技术的应用潜力.

关键词： 2D itinerant ferromagnetism Monolayer1T-VSe_(2)Van Hove singularity Molecularbeam epitaxy Angle-resolved photoemission spectroscopy Electronictransport

Butterfly-Like Anisotropic Magnetoresistance and Angle-Dependent Berry Phase in a Type-ⅡWeyl Semimetal WP2

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chinese physics Letters 2020年第9期37卷 1-5页

作者： Kaixuan Zhang Yongping Du Pengdong wang Laiming Wei Lin Li Qiang Zhang Wei Qin Zhiyong Lin Bin Cheng Yifan wang Han Xu Xiaodong Fan Zhe Sun Xiangang Wan Changgan Zeng international center for quantum Design of Functional Materials Hefei National Laboratory for Physical Sciences at the MicroscaleCAS Key Laboratory of Strongly Coupled Quantum Matter PhysicsDepartment of Physicsand Synergetic Innovation Center of Quantum Information&Quantum PhysicsUniversity of Science and Technology of ChinaHefei 230026China department of Applied physics and Institution of Energy and Microstructure Nanjing University of Science and TechnologyNanjing 210094China National Synchrotron Radiation laboratory University of Science and Technology of ChinaHefei 230029China National laboratory of solid state microstructures and Departnient of physicsf nanjing university Nanjing 210093China Collaborative Innovation center of Advanced microstructures Nanjing UniversityNanjing 210093China

The Weyl semimetal has emerged as a new topologically nontrivial phase of matter,hosting low-energy excitations of massless Weyl ***,we present a comprehensive study of a type-ⅡWeyl semimetal *** studies show a butterfly-like magnetoresistance at low temperature,reflecting the anisotropy of the electron Fermi *** four-lobed feature gradually evolves into a two-lobed variant with an increase in temperature,mainly due to the reduced relative contribution of electron Fermi surfaces compared to hole Fermi surfaces for ***,an angle-dependent Berry phase is also discovered,based on quantum oscillations,which is ascribed to the effective manipulation of extremal Fermi orbits by the magnetic field to feel nearby topological singularities in the momentum *** revealed topological character and anisotropic Fermi surfaces of the WP2 substantially enrich the physical properties of Weyl semimetals,and show great promises in terms of potential topological electronic and Fermitronic device applications.

关键词： topological Fermi Berry

Evidence for Magnetic Fractional Excitations in a Kitaev quantum-Spin-Liquid Candidate α-RuCl_(3)

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chinese physics Letters 2022年第2期39卷 72-77页

作者： Kejing Ran Jinghui wang Song Bao Zhengwei Cai Yanyan Shangguan Zhen Ma Wei wang Zhao-Yang Dong P.Cermak A.Schneidewind Siqin Meng Zhilun Lu Shun-Li Yu Jian-Xin Li Jinsheng Wen School of Physical Science and Technology and ShanghaiTech Laboratory for Topological PhysicsShanghaiTech UniversityShanghai 200031China National laboratory of solid state microstructures and department of physics Nanjing UniversityNanjing 210093China Institute for Advanced Materials Hubei Normal UniversityHuangshi 435002China School of Science Nanjing University of Posts and TelecommunicationsNanjing 210023China department of Applied physics Nanjing University of Science and TechnologyNanjing 210094China Julich Centre for Neutron Science(JCNS)at Heinz Maier-Leibnitz Zentrum(MLZ) Forschungszentrum Jülich GmbHLichtenbergstr.185748 GarchingGermany Charles university Faculty of Mathematics and PhysicsDepartment of Condensed Matter PhysicsKe Karlovu 512116PrahaCzech Republic Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH Hahn-Meitner-Platz 1D-14109BerlinGermany China Institute of Atomic Energy(CIAE) Beijing 102413China The Henry Royce Institute and department of Materials Science and Engineering The University of SheffieldSir Robert Hadfield BuildingSheffieldS13JDUnited Kingdom Collaborative Innovation center of Advanced microstructures Nanjing UniversityNanjing 210093China

It is known that α-RuCl_(3) has been studied extensively because of its proximity to the Kitaev quantum-spin-liquid(QSL)phase and the possibility of approaching it by tuning the competing *** we present the first polarized inelastic neutron scattering study on α-RuCl_(3) single crystals to explore the scattering continuum around the Γ point at the Brillouin zone center,which was hypothesized to be resulting from the Kitaev QSL state but without concrete *** polarization analyses,we find that,while the spin-wave excitations around the Γ point vanish above the transition temperature T_(N),the pure magnetic continuous excitations around the Γ point are robust against ***,by calculating the dynamical spin-spin correlation function using the cluster perturbation theory,we derive magnetic dispersion spectra based on the K-Γ model,which involves with a ferromagnetic Kitaev interaction of −7.2 meV and an off-diagonal interaction of 5.6 *** find this model can reproduce not only the spin-wave excitation spectra around the Γ point,but also the non-spin-wave continuous magnetic excitations around the Γ *** results provide evidence for the existence of fractional excitations around the Γ point originating from the Kitaev QSL state,and further support the validity of the K-Γ model as the effective minimal spin model to describe α-RuCl_(3).

关键词： temperature excitation diagonal