检索结果-南通市图书馆

Electrodeposition and characterization of ZnO thin films using sodium thiosulfate as an additive for photovoltaic solar cells

引用

Journal of Semiconductors 2017年第5期38卷 11-17页

作者： Hassiba Rahal Rafiaa Kihal Abed Mohamed Affoune mokhtar ghers Faycal Djazi Laboratoire d'Analyses Industrielles et Genie des Materiaux Departement de Genie des Procedes Faculte des Sciences et de la Technologie Universit6 8 Mai 1945 Guelma BP 401 Guelma 24000 Algeria Universite 20 Aofit 1955 Skikda BP 26 Route El-Hadaiek 21000 Algeria Universite Abbes Laghrour Khenchela BP 1252 Rue de Batna Khenchela 40004 Algeria Laboratoire d'Etude des Surfaces et Interfaces de la Matiere Solide LESIMS Departement de Physique Faculte des Sciences Badji Mokhtar Universite-Annaba-Algeria Laboratoire de Recherche Physico-Chimique des Surfaces et Interfaces Universite 20 Aofit 1955 Skikda BP 26 Route El- Hadaiek 21000 Algeria

Zinc oxide thin films have been grown by electrodeposition technique onto Cu and ITO-coated glass substrates from an aqueous zinc nitrate solution with addition of sodium thiosulfate at 90 ℃.The effects of sodium thiosulfate on the electrochemical deposition of ZnO were investigated by cyclic voltammetry and chronoamperometry *** films were obtained at-0.60 V *** and characterized by XRD,SEM,FTIR,optical,photoelectrochemical and electrical *** of the deposited film was measured to be357 nm.X-ray diffraction results indicated that the synthesized ZnO has a pure hexagonal wurtzite structure with a marked preferential orientation along（002） *** results confirmed the presence of ZnO films at peak558 cm^-*** images showed uniform,compact morphology without any cracks and films composed of large flower-like ZnO agglomerates with *** properties of ZnO reveal a high optical transmission（〉80%）and high absorption coefficient（α 〉 10^5 cm^-1） in visible *** optical energy band gap was found to be 3.28 *** measurements indicated that the ZnO films had n-type semiconductor *** properties of ZnO films showed a low electrical resistivity of 6.54 Ω·cm,carrier concentration of-1.3× 10^17cm^-3 and mobility of 7.35 cm^2V^-1s^-1.

关键词： electrodeposition zinc oxide thin films semiconductor cyclic voltammetry Hall effect measurements

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Effect of Sn Doping on the Properties of ZnO Thin Films Prepared by Spray Pyrolysis

引用

Journal of Modern Physics 2012年第11期3卷 1781-1785页

作者： Nadia Chahmat Ammar Haddad Azzedine Ain-Souya Rachid Ganfoudi Nadir Attaf mokhtar ghers Laboratory of Surfaces and Interfaces (LESIMS) Department of Physics Faculty of Science University Badji Mokhtar of Annaba Annaba Algeria Laboratory of Thin Films Surfaces and Interface Faculty of Science Department of Physics University Mentouri of Constantine Constantine Algeria

Layers of transparent and conductive Sn-doped zinc oxide (ZnO) have been prepared using chemical reactive liquid phase (spray) method on glass substrates. X-ray diffraction analysis shows that the obtained layers show preferential grains orientation along the direction (002). Microstructural analysis indicates that the thickness of the deposited films is independent of Sn content, i.e. 408 nm, and that the average grain size increases with increasing Sn content, ranging from 31 nm to 42 nm. The value of the optical gap obtained using UV-visible transmission spectroscopy method increases slightly from 3.1 eV to 3.3 eV. Moreover, transmission curves reveal that the prepared thin films are transparent in the visible domain.

关键词： ZnO Thin Films Ultrasonic Spray Semiconductor doping Optical Gap

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Preparation and Characterization of ZnO Nanocrystalline Layers

引用

Journal of Materials Science and Chemical Engineering 2014年第12期2卷 1-6页

作者： A. Haddad A. Hafidi A. Ain-Souya N. Chahmat R. Ganfoudi M. ghers Laboratory for the Study of Surfaces and Interfaces of Solid Material (LESIMS) Badji Mokhtar-Annaba University Annaba Algeria Physics Laboratory of Matter and Radiation (LPMR) Med Cherif Mesaadia-Souk Ahras University Souk Ahras Algeria

This work consists on the study of the optical properties of zinc oxide layers. These Layers are elaborated under various conditions by cathode sputtering on glass substrates and by thermal oxidations of Zn layers deposited on different types of substrates by vacuum evaporation. The oxidation treatments of Zn are made in oxygen atmosphere at temperatures between 400°C and 450°C for different times. The analyses by diffraction of X-rays, Optical Microscopy and Scanning electron microscopy enabled us to understand that the zinc oxide films deposited by cathode sputtering on a glass substrate and having a thickness of at least 240 nm and those prepared by thermal oxidation at 450°C during 2 hours of layers of Zn on an alumina substrate are homogeneous and consist of grains of size 30 nm. The optical transmission measurements show that the gap is around 3.02 eV for layers obtained by oxidation and 3.3 eV for those deposited by sputtering. These samples have a good optical transparency in the visible.

关键词： Oxide Gas Adsorption Conductance Properties

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：