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Chinese Physics B 2022年第12期31卷 599-604页

作者： Dongli Zhang mingxiang wang Huaisheng wang School of Electronic and Information Engineering Soochow UniversitySuzhou 215006China

The negative gate bias stress(NBS)reliability of n-type polycrystalline silicon(poly-Si)thin-film transistors(TFTs)with a distinct defective grain boundary(GB)in the channel is *** show that conventional NBS degradation with negative shift of the transfer curves is *** on-state current is decreased,but the subthreshold characteristics are not *** gate bias dependence of the drain leakage current at V_(ds)of 5.0 V is suppressed,whereas the drain leakage current at V_(ds)of 0.1 V exhibits obvious gate bias *** confirmed via TCAD simulation,the corresponding mechanisms are proposed to be trap state generation in the GB region,positive-charge local formation in the gate oxide near the source and drain,and trap state introduction in the gate oxide.

关键词： negative bias stress poly-Si thin-film transistor grain boundary

A systematic study of light dependency of persistentphotoconductivity in a-InGaZnO thin-film transistors

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Chinese Physics B 2020年第11期29卷 508-515页

作者： Yalan wang mingxiang wang Dongli Zhang Huaisheng wang School of Electronic and Information Engineering Soochow UniversitySuzhou 215006China

Persistent photoconductivity(PPC)effect and its light-intensity dependence of both enhancement and depletion(E-/D-)mode amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs)are systematically *** of oxygen vacancy(V O)defects of E-mode TFTs is relatively small,in which formation of the photo-induced metastable defects is thermally activated,and the activation energy(E a)decreases continuously with increasing *** of V O defects of D-mode TFTs is much larger,in which the formation of photo-induced metastable defects is found to be spontaneous instead of thermally ***,for the first time it is found that a threshold dose of light-exposure is required to form fully developed photo-induced metastable *** low light-exposure below the threshold,only a low PPC barrier is formed and the PPC recovery is *** increasing the light-exposure to the threshold,the lattice relaxation of metal cations adjacent to the doubly ionized oxygen vacancies(V O^2+)is fully developed,and the PPC barrier increases to∼0.25 eV,which remains basically unchanged under higher *** on the density of V O defects in the channel and the condition of light illumination,a unified model of formation of photo-induced metastable defects in a-IGZO TFTs is proposed to explain the experimental observations.

关键词： amorphous indium-gallium-zinc oxide thin-film transistors persistent photoconductivity lightintensity

Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress

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Chinese Physics B 2021年第11期30卷 610-617页

作者： Jianing Guo Dongli Zhang mingxiang wang Huaisheng wang School of Electronic and Information Engineering Soochow UniversitySuzhou 215006China

A new type of degradation phenomena featured with increased subthreshold swing and threshold voltage after negative gate bias stress(NBS)is observed for amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs),which can recover in a short *** comparing with the degradation phenomena under negative bias illumination stress(NBIS),positive bias stress(PBS),and positive bias illumination stress(PBIS),degradation mechanisms under NBS is proposed to be the generation of singly charged oxygen vacancies(V_(o)^(+))in addition to the commonly reported doubly charged oxygen vacancies(V_(o)^(2+)).Furthermore,the NBS degradation phenomena can only be observed when the transfer curves after NBS are measured from the negative gate bias to the positive gate bias direction due to the fast recovery of V_(o)^(+)under positive gate *** proposed degradation mechanisms are verified by TCAD simulation.

关键词： amorphous IGZO thin-film transistors negative bias stress subthreshold swing

Finite element analysis of temperature distribution of polycrystalline silicon thin film transistors under self-heating stress

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Frontiers of Electrical and Electronic Engineering in China 2009年第2期4卷 227-233页

作者： Huaisheng wang mingxiang wang Zhenyu YANG Department of Microelectronics Soochow UniversitySuzhou 215021China

The temperature distribution of typical n-type polycrystalline silicon thin film transistors under selfheating(SH)stress is studied by finite element *** both steady-state and transient thermal simulation,the influence of device power density,substrate material,and channel width on device temperature distribution is *** study is helpful to understand the mechanism of SH degradation,and to effectively alleviate the SH effect in device operation.

关键词： finite element analysis(FEA) temperature distribution thin film transistors self-heating steady-state transient state

Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases

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Chinese Physics B 2022年第8期31卷 651-655页

作者： Tianyuan Song Dongli Zhang mingxiang wang Qi Shan School of Electronic and Information Engineering Soochow UniversitySuzhou 215006China Visionox Technology Co. LtdSuzhou 215006China

Degradation of a-InGaZnO thin-film transistors working under simultaneous DC gate and drain bias stress is investigated,and the corresponding degradation mechanism is proposed and *** maximum degradation occurs under the bias stress condition that makes the electric field and electron concentration relatively high at the same *** of hot electrons in the etching-stop layer under the extended drain electrode is proven to be the underlying *** observed degradation phenomena,including distortion in the transfer curve on a logarithmic scale and two-slope dependence on gate bias on a linear scale,current crowding in the output curve,and smaller degradation in transfer curves measured under large drain bias,can all be well explained with the proposed degradation mechanism.

关键词： a-IGZO thin-film transistors hot-carrier effects

Microstructural Characterization for Ge Clusters Embedded in a-SiNy Matrix Prepared by PECVD Method

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Chinese Physics Letters 1994年第4期11卷 253-256页

作者： QU Xuexuan CHEN Kunji wang mingxiang LI Zhifeng XIA Hua FENG Duan Laboratory of Solid State Microstructures and Department of Physics Nanjing UniversityNanjing 210008

We report the successful synthesis of Ge clusters embedded in a-SiNy:H matrix prepared by the plasma enhanced chemical vapor deposition(PECVD)*** and microstructural characteristics of this granular thin film were analyzed using the infrared absorption,x-ray diffraction,Raman scattering,and transmission electron *** we discuss briefly the synthesis mechanism of this new material.

关键词： material method synthesis

Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

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Chinese Physics B 2017年第1期26卷 353-356页

作者： Dongli Zhang mingxiang wang Man Wong Hoi-Sing Kwok Department of Microelectronics Soochow University Suzhou 215006 China Center for Display Research Department of Electronic and Computer Engineering the Hong Kong University of Science and Technology Kowloon Hong Kong China

Crystallization of amorphous silicon（a-Si） which starts from the middle of the a-Si region separating two adjacent metal-induced crystallization（MIC） polycrystalline silicon（poly-Si） regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introducing MIC windows. Trace nickel that diffuses from the MIC window into the a-Si matrix during the MIC heat-treatment is experimentally discovered, which is responsible for the crystallization of the a-Si beyond the MIC front. A minimum diffusion coefficient of 1.84×10^-9cm^2/s at 550℃ is estimated for the trace nickel diffusion in a-Si.

关键词： metal-induced crystallization poly-Si nickel diffusion coefficient

Glassy metallic plastics

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Science China(Physics,Mechanics & Astronomy) 2010年第3期53卷 409-414页

作者： LI JianFu, wang JunQiang, LIU XiaoFeng, ZHAO Kun, ZHANG Bo, BAI HaiYang, PAN mingxiang & wang WeiHua Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China Institute of Physics Chinese Academy of Sciences Beijing China

This paper reports a class of bulk metallic glass including Ce-, LaCe-, CaLi-, Yb-, and Sr-based metallic glasses, which are regarded as glassy metallic plastics because they combine some unique properties of both plastics and metallic alloys. These glassy metallic plastics have very low glass transition temperature (Tg^25oC to 150oC) and low Young’s modulus (~20 GPa to 35 GPa). Similar to glassy plastics, these metallic plastics show excellent plastic-like deformability on macro-, micro- and even nano-scale in their supercooled liquid range and can be processed, such as elongated, compressed, bent, and imprinted at low temperatures, in hot water for instance. Under ambient conditions, they display such metallic properties as high thermal and electric conductivities and excellent mechanical properties and other unique properties. The metallic plastics have potential applications and are also a model system for studying issues in glass physics.

关键词： glassy metallic plastic synthesizing low Tg thermoplastic properties

BP neural network and PID combined control applied to vehicle active suspension system

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BP neural network and PID combined control applied to vehicl...

第40届中国控制会议

作者： mingxiang wang Hui Pang Peng wang Jibo Luo School of Mechanical and Precision Instrument Engineering Xi’an University of Technology

In order to adjust the suspension performance to improve the ride comfort of the vehicle, a PID controller based on BP neural network is proposed to optimize the performance of the active suspension system in real time. First, the simplified model of a quarter-vehicle active suspension system is built. Then, the vehicle active suspension system equipped with the proposed BP neural network-based PID controller（BP-PID controller） is simulated in MATLAB/Simulink software under bump road surface and random road surface. Finally, the response curves and the root mean square values of the vehicle body acceleration,suspension dynamic deflection and dynamic tire load of the active suspension and passive suspension are compared and *** simulation results show that the BP-PID controller can improve the suspension performance and inhibit the vehicle body acceleration, suspension dynamic deflection and dynamic tire load of the vehicle.

关键词： Active suspension system BP neural network PID control

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基于事件触发的汽车主动悬架振动控制器设计

兵工学报 2024年第8期45卷 2698-2711页

作者：庞辉王明祥王磊郑理哲西安理工大学机械与精密仪器工程学院陕西西安710048

为提升车辆的行驶平稳性和安全性,针对具有输入死区和饱和特性的汽车主动悬架系统,设计一种基于事件触发(Event Trigger,ET)和长短期记忆(Long Short-Term Memory,LSTM)神经网络的智能振动控制器。在构建四分之一车辆主动悬架模型基础上... 详细信息

为提升车辆的行驶平稳性和安全性,针对具有输入死区和饱和特性的汽车主动悬架系统,设计一种基于事件触发(Event Trigger,ET)和长短期记忆(Long Short-Term Memory,LSTM)神经网络的智能振动控制器。在构建四分之一车辆主动悬架模型基础上,提出一种高效的ET控制器,能够有效缓解通信紧张问题和避免控制器固有的芝诺现象,提高控制器的稳定性和可靠性。为了进一步增强控制器的智能性和自适应性引入了LSTM神经网络,利用径向基函数神经网络来模拟和生成不同条件下的响应数据实现LSTM神经网络的训练,以精确预测并补偿作动器的死区和饱和影响,进而使主动悬架系统的垂直加速度趋近于0 m/s^(2),从而极大地提升了乘坐舒适性。通过数值仿真验证所设计控制器的适用性和有效性。研究结果表明,所设计的控制器在多种工况下能够有效提高主动悬架系统的动态性能。

关键词：主动悬架系统事件触发长短期记忆网络径向基函数神经网络