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Analysis of photoluminescence behavior of high-quality single-layer MoS2

Nano Research 2019年第7期12卷 1619-1624页

作者： Lu Xu Liyun Zhao Yunsong Wang mingchu zou Qing Zhang Anyuan Cao Department of Materials Science and Engineering College of Engineering Peking UniversityBeijing 100871China

The ability to tailor and enhance photoluminescence (PL) behavior in two-dimensional (2D) transition metal dichalcogenides (TMDCs) such as molybdenum disulfide (MoS2) is significant for pursuing optoelectronic *** achieve this,it has been essential to obtain high-quality single-layer MoS2 and fully explore its intrinsic PL ***,we fabricate single-layer MoS2 by a thermal vapor sulfurization method in which a pre-deposited molybdenum trioxide (MoO3) thin film is sulfurized over a short period (for several minutes) to turn into *** as-grown MoS2 crystals show quite strong PL,which is about one order of magnitude higher than that of chemical-vapor-deposited ***- and power-dependent spectroscopy measurements disclose the apparent influence of sulfur (S) vacancies on the PL behavior and the noticeable free-to-bound exciton recombinations in the luminescence *** fact that PL intensity of the sample in vacuum sharply lowered down relative to in air reveals that the high PL is facilitated by molecular adsorption on S vacancies in *** multi-channel decay processes coupled with S vacancies are revealed in the time-resolved PL *** our work,single-layer MoS2 with high PL is synthesized and its defect-induced PL features are analyzed,which is of great importance for developing advanced nano-electronics and optoelectronics based on 2D structures.

关键词： MoS2 photoluminescence thermal vapor sulfurization S vacancy

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Electrical and thermal transport behaviours of high-entropy perovskite thermoelectric oxides

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Journal of Advanced Ceramics 2021年第2期10卷 377-384页

作者： Yunpeng Zheng mingchu zou Wenyu Zhang Di Yi Jinle Lan Ce-Wen Nan Yuan-Hua Lin State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and EngineeringTsinghua UniversityBeijing100084China State Key Laboratory of Organic-Inorganic Composites Beijing University of Chemical TechnologyBeijing100029China

Oxide-based ceramics could be promising thermoelectric materials because of their thermal and chemical stability at high ***,their mediocre electrical conductivity or high thermal conductivity is still a challenge for the use in commercial ***,we report significantly suppressed thermal conductivity in SrTiO_(3)-based thermoelectric ceramics via high-entropy strategy for the first time,and optimized electrical conductivity by defect *** high-entropy(Ca_(0.2)Sr_(0.2)Ba_(0.2)Pb_(0.2)La_(0.2))TiO_(3)bulks,the minimum thermal conductivity can be 1.17 W/(m·K)at 923 K,which should be ascribed to the large lattice distortion and the huge mass fluctuation *** power factor can reach about 295μW/(m·K^(2))by inducing oxygen ***,the ZT value of 0.2 can be realized at 873 K in this bulk *** approach proposed a new concept of high entropy into thermoelectric oxides,which could be generalized for designing high-performance thermoelectric oxides with low thermal conductivity.

关键词： high entropy thermoelectric oxides thermal conductivity electrical conductivity oxygen vacancy

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