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Porosity on External Surface of H-Clinoptilolite Sorption of CCI4 and n-C6H14

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Journal of Chemistry and Chemical Engineering 2013年第10期7卷 901-909页

作者： miguel Angel Hernandez Fernando Rojas Roberto portillo Martha Alicia Salgado Gabriela Perez Zeolites Research Department and Postgrade of Agroecology Sciences Institute Puebla 72570 Mexico Chemistry Departament Metropolitan Autonomous University-lztapalapa Mexico 09340 Mexico Faculty of Chemistry Department of Physical Chemistry Autonomous University of Puebla Puebla 72570 Mexico Faculty of Chemical Engineering Autonomous University of Puebla Puebla 72570 Mexico

Investigation of Chemical Bath Deposition of ZnO Nanocrystals Thin Films Using Different ZnNO3 Concentration

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材料科学与工程（中英文A版） 2012年第5期2卷 442-453页

作者： miguel Hemandez Hernandez Martin Lazcano Hernendez Juan Hernandez Tecorralcol Gabriel Juarez Diaz Melissa Chavez portillo Salvador Rosas Castilla L. Chaltel Lima Oscar portillo Moreno Facultad de Ciencias Quimicas Benemerita Universidad Autonoma de Puebla Moxico Puebla Mexico CIDS-ICUAP Benemerita Universidad A utonoma de Puebla Moxico

In this work, thin films growth at different ZnNO3 concentrations: 0.02 M, 0.03 M and 0.04 M by chemical bath deposition (CBD) as-prepared on glass substrates at 80 °C ± 2 °C. Patterns Diffraction x-ray (DRX) shown peaks 2θ = (31.72, 32.769, 34.36, 36.10, 47.44, 56.52, 62.78, 67.84 and 69.02), at concentration 0.02 M show formation from hydrozincite [Zn5(CO3)2(OH)6]. The optical band gap shifts from 3.8 eV to 3.6 eV. Photoluminescence (PL) spectra show intensity variation of the green emission (GE) may be resulted from variation of the intrinsic defect in ZnO films, such zinc vacancy (VZn), oxygen vacancy (VO), and interstitial zinc (Zni), interstitial oxygen (Oi). The presence of defects in our samples is responsible for the observed broad visible PL bands; this indicates reductions of oxygen vacancies and increase of oxygen interstitials. It could be believed that the presence of defects in samples is responsible for the observed broad visible PL band. The concentration increased the visible defect luminescence, which might be due to improvement to sample stoichiometric. The presence of both green emission (GE) and yellow emission (YE) can be seen through the deconvolution of the defect increasing the concentration, the position of the GE shifted from 1.96-2.45 eV and the increase of its intensity. The shifts of these two visible PL bands might be due to changes in local environments of the defects centers in samples due to increased concentration. Therefore, the GE relate to donor levels dominated due to increase of oxygen vacancies. ZnO is an n-type semiconductor and it means that most defects are Zn interstitials and oxygen vacancies. Raman spectra showed increase of the 437 cm-1 (E2 mode) peak intensity due concentration 0.4 M.

关键词： ZnO薄膜 O3浓度化学浴沉积纳米晶薄膜慢性粒细胞白血病缺陷中心绿色发光强度变化

Experiment and Modeling of Low Coverage Uptake of N2 and 02 on H-Clinoptilolite Zeolite from Tehuacan, Puebla, Mexico

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Journal of Chemistry and Chemical Engineering 2014年第1期8卷 1-10页

作者： miguel Angel Hemández Karla Quiroz Fernando Rojas: Roberto portillo Martha Alicia Salgado Fernando Hernándezl Antonio Rivera Chemistry Departament Metropolitan Autonomous University-Iztapalapa Mdxico 09340 México Faculty of Chemistry Autonomous University of Puebla Puebla 72570 México Chemistry Center Autonomous University of Puebla Puebla 72570 México Microbiology Center Autonomous University of Puebla Puebla 72570 México Zeolites Research Department and Postgrade of Agroecology Autonomous University of Puebla Puebla 725 70 México

Optical and Structural Properties CdSe： Ni^2＋ Nanocrystals

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材料科学与工程（中英文A版） 2014年第9期4卷 309-314页

作者： Marcial Zamora Tototzintle Martin Lazcano Hemandez Arturo Sosa Sanchez Leslie Chaltel Lima Estephani Balderrabano Perdomo MoisesAraiza Garcia miguel Hernadez Hemandez Rey Baltazar Lopez Oscar portillo Moreno Laboratory Materials Science Faculty of Chemical Sciences Autonomous University of Puebla Puebla 72001 Pue Mexico CIDS-ICUAP C. U Puebla M~xico.AutonomousUniversity of Puebla Puebla 72001 Pue Mexico ITSM Campus Puebla Via Atlixcayolt 2301 Col. Reserva Territorial. Atlixcayolt Puebla 72001 Pue Mexico Faculty of Electronic Sciences Autonomous University of Puebla Puebla 72001 Pue Mexico