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Electrically-driven ultrafast out-of-equilibrium light emission from hot electrons in suspended graphene/hBN heterostructures

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International Journal of Extreme Manufacturing 2024年第1期6卷 328-338页

作者： Qiang Liu Wei Xu Xiaoxi Li Tongyao Zhang Chengbing Qin Fang Luo Zhihong zhu Shiqiao Qin mengjian zhu Kostya S Novoselov College of Advanced Interdisciplinary Studies&Hunan Provincial Key Laboratory of Novel Nano-optoelectronic Information Materials and Devices National University of Defense TechnologyChangshaHunan 410073People’s Republic of China Nanhu Laser Laboratory National University of Defense TechnologyChangshaHunan 410073People’s Republic of China State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto-ElectronicsShanxi UniversityTaiyuan 030006People’s Republic of China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006People’s Republic of China State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Laser SpectroscopyShanxi UniversityTaiyuan 030006People’s Republic of China Institute for Functional Intelligent Materials National University of SingaporeSingapore 117544Singapore Department of Materials Science and Engineering National University of SingaporeSingapore 117575Singapore

Nanoscale light sources with high speed of electrical modulation and low energy consumption are key components for nanophotonics and optoelectronics.The record-high carrier mobility and ultrafast carrier dynamics of graphene make it promising as an atomically thin light emitter which can be further integrated into arbitrary platforms by van der Waals forces.However,due to the zero bandgap,graphene is difficult to emit light through the interband recombination of carriers like conventional semiconductors.Here,we demonstrate ultrafast thermal light emitters based on suspended graphene/hexagonal boron nitride(Gr/hBN)heterostructures.Electrons in biased graphene are significantly heated up to 2800 K at modest electric fields,emitting bright photons from the near-infrared to the visible spectral range.By eliminating the heat dissipation channel of the substrate,the radiation efficiency of the suspended Gr/hBN device is about two orders of magnitude greater than that of graphene devices supported on SiO2or hBN.Wefurther demonstrate that hot electrons and low-energy acoustic phonons in graphene are weakly coupled to each other and are not in full thermal equilibrium.Direct cooling ofhigh-temperature hot electrons to low-temperature acoustic phonons is enabled by the significant near-field heat transfer at the highly localized Gr/hBN interface,resulting in ultrafast thermal emission with up to 1 GHz bandwidth under electrical excitation.It is found thatsuspending the Gr/hBN heterostructures on the SiO2trenches significantly modifies the light emission due to the formation of the optical cavity and showed a~440%enhancement inintensity at the peak wavelength of 940 nm compared to the black-body thermal radiation.The demonstration of electrically driven ultrafast light emission from suspended Gr/hBNheterostructures sheds the light on applications of graphene heterostructures in photonicintegrated circuits,such as broadband light sources and ultrafast thermo-optic phase modulators.

关键词： suspended graphene ultrafast light emitter van der Waals heterostructures thermal radiation electron–phonon interaction

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A monolithically sculpted van der Waals nano-opto-electro-mechanical coupler

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Light(Science & Applications) 2022年第3期11卷 76-85页

作者： Tongyao Zhang Hanwen Wang Xiuxin Xia Ning Yan Xuanzhe Sha Jinqiang Huang Kenji Watanabe Takashi Taniguchi mengjian zhu Lei Wang Jiantou Gao Xilong Liang Chengbing Qin Liantuan Xiao Dongming Sun Jing Zhang Zheng Han Xiaoxi Li State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto-ElectronicsShanxi UniversityTaiyuan 030006China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Material Science and Engineering University of Science and Technology of ChinaAnhui 230026China Research Center for Functional Materials National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan International Center for Materials Nanoarchitectonics National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan College of Advanced Interdisciplinary Studies National University of Defense TechnologyChangsha 410073China The Key Laboratory of Science and Technology on Silicon Devices Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China The University of Chinese Academy of Sciences Beijing 100029China State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Laser SpectroscopyShanxi UniversityTaiyuan 030006China

The nano-opto-electro-mechanical systems(NOEMS)are a class of hybrid solid devices that hold promises in both classical and quantum manipulations of the interplay between one or more degrees of freedom in optical,electrical and mechanical modes.To date,studies of NOEMS using van der Waals(vdW)heterostructures are very limited,although vdW materials are known for emerging phenomena such as spin,valley,and topological physics.Here,we devise a universal method to easily and robustly fabricate vdW heterostructures into an architecture that hosts opto-electro-mechanical couplings in one single device.We demonstrated several functionalities,including nano-mechanical resonator,vacuum channel diodes,and ultrafast thermo-radiator,using monolithically sculpted graphene NOEMS as a platform.Optical readout of electric and magnetic field tuning of mechanical resonance in a CrOCl/graphene vdW NOEMS is further demonstrated.Our results suggest that the introduction of the vdW heterostructure into the NOEMS family will be of particular potential for the development of novel lab-on-a-chip systems.

关键词： monolithic tuning resonator

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Light-induced irreversible structural phase transition in trilayer graphene

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Light(Science & Applications) 2020年第1期9卷 335-345页

作者： Jianyu Zhang Jinsen Han Gang Peng Xi Yang Xiaoming Yuan Yongjun Li Jianing Chen Wei Xu Ken Liu Zhihong zhu Weiqi Cao Zheng Han Jiayu Dai mengjian zhu Shiqiao Qin Kostya S.Novoselov Department of Physics National University of Defense Technology410073 ChangshaChina College of Advanced Interdisciplinary Studies National University of Defense Technology410073 ChangshaChina Hunan Key Laboratory of Super Micro-structure and Ultrafast Process School of Physics and ElectronicsCentral South University410083 ChangshaChina Quantum Design China(Beijing)Co. Ltd100015 BeijingChina Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of Sciences100190 BeijingChina School of Physical Sciences University of Chinese Academy of Sciences100049 BeijingChina Songshan Lake Materials Laboratory Dongguan 523808 GuangdongChina Chongqing 2D Materials Institute Liangjiang New Area400714 ChongqingChina Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of Sciences110016 ShenyangChina School of Material Science and Engineering University of Science and Technology of China230026 AnhuiChina State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto-ElectronicsShanxi University030006 TaiyuanChina Department of Materials Science and Engineering National University of SingaporeSingapore 117575Singapore

A crystal structure has a profound influence on the physical properties of the corresponding material.By synthesizing crystals with particular symmetries,one can strongly tune their properties,even for the same chemical configuration(compare graphite and diamond,for instance).Even more interesting opportunities arise when the structural phases of crystals can be changed dynamically through external stimulations.Such abilities,though rare,lead to a number of exciting phenomena,such as phase-change memory effects.In the case of trilayer graphene,there are two common stacking configurations(ABA and ABC)that have distinct electronic band structures and exhibit very different behaviors.Domain walls exist in the trilayer graphene with both stacking orders,showing fascinating new physics such as the quantum valley Hall effect.Extensive efforts have been dedicated to the phase engineering of trilayer graphene.However,the manipulation of domain walls to achieve precise control of local structures and properties remains a considerable challenge.Here,we experimentally demonstrate that we can switch from one structural phase to another by laser irradiation,creating domains of different shapes in trilayer graphene.The ability to control the position and orientation of the domain walls leads to fine control of the local structural phases and properties of graphene,offering a simple but effective approach to create artificial two-dimensional materials with designed atomic structures and electronic and optical properties.

关键词： structural walls phase

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霍尔效应实验分层次内容体系的构建

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物理实验 2024年第2期44卷 14-22页

作者：罗威朱梦剑周思宇程天奇彭刚国防科技大学理学院物理系湖南长沙410073 国防科技大学前沿交叉学科学院纳米系湖南长沙410073

以霍尔效应实验为例,结合科技前沿研究热点,探讨了基于石墨烯霍尔效应的四级分层次教学内容构建.霍尔效应基础内容包括石墨烯霍尔器件的灵敏度和伏安特性的测量;提升内容为石墨烯霍尔器件转移曲线的测量,载流子浓度和迁移率的计算;进阶... 详细信息

以霍尔效应实验为例,结合科技前沿研究热点,探讨了基于石墨烯霍尔效应的四级分层次教学内容构建.霍尔效应基础内容包括石墨烯霍尔器件的灵敏度和伏安特性的测量;提升内容为石墨烯霍尔器件转移曲线的测量,载流子浓度和迁移率的计算;进阶内容包括石墨烯霍尔器件的制作,石墨烯霍尔器件的自主应用;高阶内容涵盖石墨烯量子霍尔效应的测量和石墨烯霍尔效应的仿真计算.构建霍尔效应实验四级内容体系,可以更好地培养学生在基础知识、实验能力、科学素养和核心价值等方面的综合能力.

关键词：霍尔效应石墨烯 COMSOL多物理场仿真软件分层次教学

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悬空石墨烯/六方氮化硼异质结焦耳热红外辐射器件的可控制备与光电性能研究(特邀)

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红外与激光工程 2023年第6期52卷 285-293页

作者：刘强罗芳邓小江朱梦剑朱志宏秦石乔国防科技大学前沿交叉学科学院新型纳米光电信息材料与器件湖南省重点实验室湖南长沙410073 国防科技大学南湖之光实验室湖南长沙410073 中国人民解放军31638部队云南昆明650100

石墨烯具有优异的光、电、热以及力学性质,而悬空石墨烯避免了衬底带来的褶皱、载流子散射和掺杂等影响因素,可以充分展现石墨烯的本征物理特性,因此在高性能石墨烯微电子和光电子器件研究中具有重要意义。然而,目前悬空石墨烯器件还存... 详细信息

石墨烯具有优异的光、电、热以及力学性质,而悬空石墨烯避免了衬底带来的褶皱、载流子散射和掺杂等影响因素,可以充分展现石墨烯的本征物理特性,因此在高性能石墨烯微电子和光电子器件研究中具有重要意义。然而,目前悬空石墨烯器件还存在着制备方法复杂、成品率低、性能不稳定等挑战。文中提出了一种利用六方氮化硼吸附石墨烯,将其定点转移到金属电极,制备悬空石墨烯焦耳热红外辐射器件的新方法。六方氮化硼对悬空石墨烯具有良好的支撑悬挂作用,有效提高了悬空石墨烯的力学稳定性,避免了坍塌、断裂等失效情况。真空热退火处理后悬空石墨烯的电阻降低到退火处理前的约六分之一,载流子迁移率比退火前提高了约18倍。当偏置电压为8 V时,拉曼光谱测试发现石墨烯温度为836 K,器件在955 nm波长处表现出强烈的红外辐射信号。

关键词：悬空石墨烯六方氮化硼真空退火焦耳热拉曼光谱红外辐射

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基于拉曼光谱法的电偏置悬空石墨烯器件热导率研究

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中国激光 2023年第1期50卷 212-219页

作者：崔子孺周思宇肖暘张宇辰郭楚才刘肯罗芳朱梦剑国防科技大学前沿交叉学科学院湖南长沙410073 新型纳米光电信息材料与器件湖南省重点实验室湖南长沙410073

石墨烯是典型的二维原子晶体材料,具有极高的热导率,其以独特的电子-声子相互作用机制以及在微纳尺度热管理领域的应用潜力而备受瞩目。国内外针对石墨烯在不同温度下的热导率进行了大量的理论和实验研究,但如何准确测量电偏置作用下悬... 详细信息

石墨烯是典型的二维原子晶体材料,具有极高的热导率,其以独特的电子-声子相互作用机制以及在微纳尺度热管理领域的应用潜力而备受瞩目。国内外针对石墨烯在不同温度下的热导率进行了大量的理论和实验研究,但如何准确测量电偏置作用下悬空石墨烯器件的热导率仍需进一步深入研究。本课题组成功制备了高质量的悬空石墨烯场效应晶体管,并基于拉曼光谱法研究了少层悬空石墨烯在不同电压下的热导率变化规律。实验结果显示:当偏置电压从0 V增加至1.5 V时,悬空石墨烯的最大温度变化范围为300~779 K,同时其热导率也发生了相应变化,介于2390~3000 W/(m·K)之间。本实验结果为研究悬空石墨烯纳米电子器件在实际应用场景中的热传导特性提供了实验数据参考。

关键词：光学器件悬空石墨烯场效应晶体管热导率拉曼光谱

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不同间隔时间双侧膝关节置换术的安全性与经济成本对比

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骨科 2017年第3期8卷 218-222页

作者：陈迪嘉朱先洋祝蒙见尹宗生安徽医科大学第一附属医院骨科合肥230022

目的比较不同间隔时间的双侧全膝关节置换术(total knee arthroplasty,TKA)的安全性与经济成本。方法回顾性分析我院2011年4月至2015年11月收治的双侧膝骨性关节炎病人155例,按照双侧TKA手术的间隔时间分为三组,一期完成手术者52例纳入... 详细信息

目的比较不同间隔时间的双侧全膝关节置换术(total knee arthroplasty,TKA)的安全性与经济成本。方法回顾性分析我院2011年4月至2015年11月收治的双侧膝骨性关节炎病人155例,按照双侧TKA手术的间隔时间分为三组,一期完成手术者52例纳入一期组,非同一入院周期行分期TKA的51例纳入非同期分期组,同一入院周期行TKA的52例纳入同期分期组。记录三组病人的术前一般资料、手术时间、输血率、平均输血量、住院时间、住院费用、术后并发症、术后美国特种外科医院(the hospital for special surgery,HSS)膝关节评分及疼痛视觉模拟量表(visual analogue scale,VAS)评分。结果三组病人术后各时间点的HSS评分、VAS评分比较,差异均无统计学意义(P均>0.05);一期组的手术时间最短、住院时间最短、住院费用最低,但输血率及平均输血量最多;非同期分期组的住院时间最长、住院费用最高;同期分期组的住院时间及费用均居中。三组均无感染及死亡病例,一期组发生下肢深静脉血栓1例(1.92%)、心脑血管疾病3例(5.77%)、切口愈合不良2例(3.85%),并发症总发生率为11.54%;非同期分期组和同期分期组各发生2例切口愈合不良(3.92%、3.85%)。结论对于术前一般情况相对较差且必须行双侧TKA的病人,同一入院周期内行分期手术是一种更安全、经济的手术方式。

关键词：关节成形术,置换,膝骨关节炎对比研究

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原位化学氧化构建高性能MoS2-MoO3面内同质异质结光敏晶体管

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Science China Materials 2020年第6期63卷 1076-1084页

作者：毕开西万强舒志文邵功磊靳媛媛朱梦剑林均刘华伟刘怀志陈艺勤刘松段辉高 College of Mechanical and Vehicle Engineering State Key Laboratory of Advanced Design and Manufacturing for Vehicle BodyHunan UniversityChangsha 410082China School of Physics and Electronics Hunan UniversityChangsha 410082China Institute of Chemical Biology and Nanomedicine(ICBN) State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China College of Science National University of Defense TechnologyChangsha 410073China

由组成相同的材料构建具有清晰边界的平面内p-n异质结是二维晶体管研究面临的主要挑战之一,在下一代集成电路和光电器件领域具有重要的潜在应用.因此有必要开发一种可实现p-n界面的简便、可控的操作方法.硫化钼(MoS2)作为一种具有原子... 详细信息

由组成相同的材料构建具有清晰边界的平面内p-n异质结是二维晶体管研究面临的主要挑战之一,在下一代集成电路和光电器件领域具有重要的潜在应用.因此有必要开发一种可实现p-n界面的简便、可控的操作方法.硫化钼(MoS2)作为一种具有原子层厚度的n型半导体材料已经在电子学和光电子学领域展现出巨大的应用前景.在本研究中,我们通过KI/I2溶液化学氧化诱导方法实现了从n型MoS2到p型MoO3的原位转化,进而形成了横向面内p-n异质结.MoS2/MoO3 p-n异质结显示出高效的光响应和整流特征,0 V、~3.6 mA W-1条件下最大外部量子产率达到~650%,同时光开关比达到~102.构筑的p-n异质结的高性能也被光电流面扫描所证实.由于器件在低源漏电压(VDS)和栅压(VG)条件下具有高的光响应性能,MoS2/MoO3 p-n二极管在光电器件及集成电路中的应用具有低功耗的特点.本研究为局部进行载流子种类转变提供了可能的途径,并将MoS2进一步应用于电子学、光电子学及CMOS逻辑电路领域.

关键词： molybdenum disulfide lateral p-n junction photocurrent optoelectronics

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Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents

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Light(Science & Applications) 2020年第1期9卷 407-416页

作者： Jiayue Han Meiyu He Ming Yang Qi Han Fang Wang Fang Zhong mengjian Xu Qing Li He zhu Chongxin Shan Weida Hu Xiaoqing Chen Xinran Wang Jun Gou Zhiming Wu Jun Wang School of Optoelectronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu 610054China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Science500 Yutian RoadShanghai 200083China Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesHangzhou 310024China Henan Key Laboratory of Diamond Optoelectronic Materials and Devices School of Physics and EngineeringZhengzhou UniversityZhengzhou 450001China National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China

The intriguing carrier dynamics in graphene heterojunctions have stimulated great interest in modulating the optoelectronic features to realize high-performance photodetectors.However,for most phototransistors,the photoresponse characteristics are modulated with an electrical gate or a static field.In this paper,we demonstrate a graphene/C_(60)/pentacene vertical phototransistor to tune both the photoresponse time and photocurrent based on light modulation.By exploiting the power-dependent multiple states of the photocurrent,remarkable logical photocurrent switching under infrared light modulation occurs in a thick C_(60) layer(11 nm)device,which implies competition of the photogenerated carriers between graphene/C_(60) and C_(60)/pentacene.Meanwhile,we observe a complete positive-negative alternating process under continuous 405 nm irradiation.Furthermore,infrared light modulation of a thin C_(60)(5 nm)device results in a photoresponsivity improvement from 3425 A/W up to 7673 A/W,and we clearly probe the primary reason for the distinct modulation results between the 5 and 11 nm C_(60) devices.In addition,the tuneable bandwidth of the infrared response from 10 to 3×10^(3) Hz under visible light modulation is explored.Such distinct types of optical modulation phenomena and logical photocurrent inversion characteristics pave the way for future tuneable logical photocurrent switching devices and high-performance phototransistors with vertical graphene heterojunction structures.

关键词： heterojunction transistors optoelectronic

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棉粕固态发酵菌种的筛选及复配

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饲料工业 2017年第21期38卷 57-61页

作者：王云超米军刘孟健赵永红朱金珍姚峻中粮(昌吉)粮油工业有限公司新疆昌吉831100

利用棉粕固态发酵的方法,对棉粕发酵菌种进行了筛选,随后对已筛菌种进行正交试验确定其最佳配比,最后按最优配比复配菌种进行棉粕发酵试验,检测样品相关指标。试验结果表明:(1)单菌种筛选出芽孢杆菌KC-1、乳酸菌SS-2、酵母菌JS-1作为复... 详细信息

利用棉粕固态发酵的方法,对棉粕发酵菌种进行了筛选,随后对已筛菌种进行正交试验确定其最佳配比,最后按最优配比复配菌种进行棉粕发酵试验,检测样品相关指标。试验结果表明:(1)单菌种筛选出芽孢杆菌KC-1、乳酸菌SS-2、酵母菌JS-1作为复配菌种。(2)复配菌种最佳配比为:KC-1:SS-2:JS-1=2:1:2。(3)按最优配比复配菌种发酵棉粕后的主要指标分别为:游离棉酚含量213.36 mg/kg、粗蛋白含量48.21%、酸溶蛋白含量13.40%、小肽含量5.60%、有机酸含量1.68%、pH值4.84、活菌数8.20×10~8cfu/g、发酵风味适宜令人愉悦。本试验为棉粕混合菌种发酵剂相关产品的开发奠定了良好的基础。

关键词：棉粕固态发酵菌种筛选菌种复配

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