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Printed thin film transistors with 10^(8)on/off ratios and photoelectrical synergistic characteristics using isoindigo-based polymers-enriched(9,8)carbon nanotubes

引用

Nano Research 2022年第6期15卷 5517-5526页

作者： Wenjing Xu Min Li masayoshi tange Liqiang Li Juncai Hou Jun Ye Li Wei Yuan Chen Jianwen Zhao School of Materials Science and Engineering Shaanxi University of TechnologyHanzhong 723001China Division of Nanodevices and Related Nanomaterials Printable Electronics Research CentreSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesNo.398 Ruoshui RoadSEIDSuzhou Industrial ParkSuzhou 215123China School of Nano Technology and Nano Bionics University of Science and Technology of ChinaHefei 230026China National and Local Joint Engineering Laboratory for Slag Comprehensive Utilization and Environmental Technology Shaanxi University of TechnologyHanzhong 723001China Nanomaterials Research Institute National Institute of Advanced Industrial Science and Technology(AIST)Tsukuba 3058565Japan Advanced Materials Division Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesNo.398 Ruoshui RoadSEIDSuzhou Industrial ParkSuzhou 215123China Institute of High Performance Computing Agency for ScienceTechnology and ResearchSingapore 138632Singapore School of Chemical and Biomolecular Engineering The University of SydneyCamperdownNSW 2006Australia

Monochiral single-walled carbon nanotubes(SWCNTs)can enable high-performance carbon-based electronic devices and integrated ***,their fabrication often requires complex SWCNT purification and ***,we showed that isoindigo-based polymer derivatives(PDPPIID and PFIID)directly enriched(9,8)nanotubes from as-synthesized SWCNT powders selectively and efficiently to yield high concentration(9,8)nanotube *** selective wrapping mechanism was elucidated by classical full-atomistic molecular dynamic(MD)***-film transistors(TFTs)were fabricated by depositing the SWCNT ink into device channels using aerosol jet *** performance was strongly influenced by polymer residues,the deposition condition(humidity),and ink *** TFTs showed excellent device-to-device uniformity with 108 on/off ***,optoelectronic transistors were fabricated,and their photoelectrical neuromorphic characteristics,storage,memory,and logic functions were characterized under the pulsed light and voltage stimulations,demonstrating excellent application potentials.

关键词： monochiral carbon nanotube polymer wrapping printed thin-film transistor photoelectrical synergistic molecular dynamic simulation

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