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Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor

Light(Science & Applications) 2020年第1期9卷 1079-1085页

作者： Amin Soltani Frederik Kuschewski marlene bonmann Andrey Generalov Andrei Vorobiev Florian Ludwig Matthias M.Wiecha Dovile Cibiraite Frederik Walla Stephan Winnerl Susanne C.Kehr Lukas M.Eng Jan Stake Hartmut G.Roskos Physikalisches Institut Johann Wolfgang Goethe-UniversitatMax-von-Laue-Str.1D-60438 Frankfurt am MainGermany Institut für Angewandte Physik Technische Universitat DresdenNöthnitzer Str.61D-01187 DresdenGermany Department of Microtechnology and Nanoscience Chalmers University of TechnologySE-41296 GothenburgSweden Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-RossendorfBautzner Landstraße 400D-01328 DresdenGermany Complexity and Topology in Quantum Matter(CT.QMAT) Cluster of Excellence EXC 2147Dresden/WurzburgGermany Department of Electronics and Nanoengineering Aalto UniversityTietotie 302150EspooFinland

Plasma waves play an important role in many solid-state phenomena and *** also become significant in electronic device structures as the operation frequencies of these devices increase.A prominent example is field-effect transistors(FETs),that witness increased attention for application as rectifying detectors and mixers of electromagnetic waves at gigahertz and terahertz frequencies,where they exhibit very good sensitivity even high above the cut-off frequency defined by the carrier transit *** theory predicts that the coupling of radiation at THz frequencies into the channel of an antenna-coupled FET leads to the development of a gated plasma wave,collectively involving the charge carriers of both the two-dimensional electron gas and the gate *** this paper,we present the first direct visualization of these *** graphene FETs containing a buried gate electrode,we utilize near-field THz nanoscopy at room temperature to directly probe the envelope function of the electric field amplitude on the exposed graphene sheet and the neighboring antenna *** of the field distribution documents that wave injection is unidirectional from the source side since the oscillating electrical potentials on the gate and drain are equalized by capacitive *** plasma waves,excited at 2 THz,are overdamped,and their decay time lies in the range of 25-70 *** this short decay time,the decay length is rather long,i.e.,0.3-0.5μm,because of the rather large propagation speed of the plasma waves,which is found to lie in the range of 3.5-7×10^(6)m/s,in good agreement with *** propagation speed depends only weakly on the gate voltage swing and is consistent with the theoretically predicted 1/4 power law.

关键词： antenna channel transistor

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