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Investigation and modeling of the avalanche effect in MOSFETs with non-uniform finger spacing

Journal of Semiconductors 2011年第12期32卷 64-67页

作者：刘军孙玲玲 marissa condon Key Laboratory of RF Circuits and Systems Ministry of EducationHangzhou Dianzi University School of Electronic Engineering Dublin City University

This paper investigates the effect of a non-uniform gate-finger spacing layout structure on the avalanche breakdown performance of RF CMOS technology. Compared with a standard multi-finger device with uniform gate-finger spacing, a device with non-uniform gate-finger spacing represents an improvement of 8.5% for the drain-source breakdown voltage （BVds） and of 20% for the thermally-related drain conductance. A novel compact model is proposed to accurately predict the variation of BVds with the total area of devices, which is dependent on the different finger spacing sizes. The model is verified and validated by the excellent match between the measured and simulated avalanche breakdown characteristics for a set of uniform and non-uniform gate-finger spacing arranged nMOSFETs.

关键词： non-uniform gate-finger spacing avalanche breakdown RF CMOS

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HIGHLY OSCILLATORY DIFFUSION-TYPE EQUATIONS

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Journal of Computational Mathematics 2013年第6期31卷 549-572页

作者： Sevda Uskiiplii Altlnbasak marissa condon Alfredo Deano Arieh Iserles or Mathematical Sciences University of Cambridge Cambridge UK School of Electronic Engineering Dublin City University Dublin Ireland Department of Mathematics University Carlos III de Madrid Madrid Spain Department of Applied Mathematics and Theoretical Physics Centre for Mathematical Sciences University of Cambridge Cambridge UK

We explore new asymptotic-numeric solvers for partial differential equations with highly oscillatory forcing terms. Such methods represent the solution as an asymptotic series, whose terms can be evaluated by solving non-oscillatory problems and they guarantee high accuracy at a low computational cost. We consider two forms of oscillatory forcing terms, namely when the oscillation is in time or in space： each lends itself to different treatment. Numerical examples highlight the salient features of the new approach.

关键词： Diffusion-type PDEs High oscillation Asymptotic expansions Modulated Fourier expansions.

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QUADRATURE METHODS FOR HIGHLY OSCILLATORY SINGULAR INTEGRALS

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Journal of Computational Mathematics 2021年第2期39卷 227-260页

作者： Jing Gao marissa condon Arieh Iserles Benjamin Gilvey Jon Trevelyan School of Mathematics and Statistics Xi'an Jiaotong UniversityXi'an 710049China School of Electronic Engineering Dublin City UniversityIreland DAMTP Centre for Mathematical SciencesUniversity of CambridgeUK Department of Engineering Durham UniversityUK

We address the evaluation of highly oscillatory integrals,with power-law and logarithmic singularities.Such problems arise in numerical methods in engineering.Notably,the evaluation of oscillatory integrals dominates the run-time for wave-enriched boundary integral formulations for wave scattering,and many of these exhibit singularities.We show that the asymptotic behaviour of the integral depends on the integrand and its derivatives at the singular point of the integrand,the stationary points and the endpoints of the integral.A truncated asymptotic expansion achieves an error that decays faster for increasing frequency.Based on the asymptotic analysis,a Filon-type method is constructed to approximate the integral.Unlike an asymptotic expansion,the Filon method achieves high accuracy for both small and large frequency.Complex-valued quadrature involves interpolation at the zeros of polynomials orthogonal to a complex weight function.Numerical results indicate that the complex-valued Gaussian quadrature achieves the highest accuracy when the three methods are compared.However,while it achieves higher accuracy for the same number of function evaluations,it requires signi cant additional cost of computation of orthogonal polynomials and their zeros.

关键词： Numerical quadrature Singular highly oscillatory integrals Asymptotic analysis Boundary Element Method Plane wave enrichment Partition of Unity

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Double-πfully scalable model for on-chip spiral inductors

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Journal of Semiconductors 2012年第8期33卷 71-81页

作者：刘军钟琳王皇艾进才孙玲玲余志平 marissa condon Key Laboratory of RF Circuits and Systems Ministry of EducationHangzhou Dianzi University School of Electronic Engineering Dublin City University

A novel double-n equivalent circuit model for on-chip spiral inductors is presented. A hierarchical structure, similar to that of MOS models is introduced. This enables a strict partition of the geometry scaling in the global model and the model equations in the local model. The major parasitic effects, including the skin effect, the proximity effect, the inductive and capacitive loss in the substrate, and the distributed effect, are analytically calculated with geometric and process parameters in the locaMevel. As accurate values of the layout and process parameters are difficult to obtain, a set of model parameters is introduced to correct the errors caused by using these given inaccurate layout and process parameters at the local level. Scaling rules are defined to enable the formation of models that describe the behavior of the inductors of a variety of geometric dimensions. A series of asymmetric inductors with different geometries are fabricated on a standard 0.18-μm SiGe BiCMOS process with 100 Ω/cm substrate resistivity to verify the proposed model. Excellent agreement has been obtained between the measured results and the proposed model over a wide frequency range.

关键词： spiral inductor double-x equivalent circuit fully scalable

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A Scalable Model of the Substrate Network in Deep n-Well RF MOSFETs with Multiple Fingers

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Circuits and Systems 2011年第2期2卷 91-100页

作者： Jun Liu marissa condon 不详

A novel scalable model of substrate components for deep n-well (DNW) RF MOSFETs with different number of fingers is presented for the first time. The test structure developed in [1] is employed to directly access the characteristics of the substrate to extract the different substrate components. A methodology is developed to directly extract the parameters for the substrate network from the measured data. By using the measured two-port data of a set of nMOSFETs with different number of fingers, with the DNW in grounded and float configuration, respectively, the parameters of the scalable substrate model are obtained. The method and the substrate model are further verified and validated by matching the measured and simulated output admittances. Excellent agreement up to 40 GHz for configurations in common-source has been achieved.

关键词： Deep N-Well (DNW) RF Mosfets Substrate Network Scalable Model

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Asymptotic solvers for ordinary differential equations with multiple frequencies

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Science China Mathematics 2015年第11期58卷 2279-2300页

作者： condon marissa DEAO Alfredo GAO Jing ISERLES Arieh School of Electronic Engineering Dublin City University Departmento de Matematicas Universidad Carlos III de Madrid School of Mathematics and Statistics Xi'an Jiaotong University DAMTP Centre for Mathematical SciencesUniversity of Cambridge

We construct asymptotic expansions for ordinary differential equations with highly oscillatory forcing terms,focusing on the case of multiple,non-commensurate frequencies.We derive an asymptotic expansion in inverse powers of the oscillatory parameter and use its truncation as an exceedingly effective means to discretize the differential equation in question.Numerical examples illustrate the effectiveness of the method.

关键词：常微分方程频率渐近解渐近展开振荡参数数值算例 ing

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